US20020139303A1 - Deposition apparatus and deposition method - Google Patents
Deposition apparatus and deposition method Download PDFInfo
- Publication number
- US20020139303A1 US20020139303A1 US10/062,005 US6200502A US2002139303A1 US 20020139303 A1 US20020139303 A1 US 20020139303A1 US 6200502 A US6200502 A US 6200502A US 2002139303 A1 US2002139303 A1 US 2002139303A1
- Authority
- US
- United States
- Prior art keywords
- organic compound
- deposition
- chamber
- evaporation
- evaporation source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 360
- 238000000151 deposition Methods 0.000 title claims description 374
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 438
- 238000001704 evaporation Methods 0.000 claims abstract description 181
- 230000008020 evaporation Effects 0.000 claims abstract description 179
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 195
- 239000000463 material Substances 0.000 claims description 137
- 238000007738 vacuum evaporation Methods 0.000 claims description 112
- 239000000758 substrate Substances 0.000 claims description 106
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 39
- 230000000903 blocking effect Effects 0.000 claims description 35
- 238000012546 transfer Methods 0.000 claims description 35
- 150000004696 coordination complex Chemical class 0.000 claims description 23
- 239000012044 organic layer Substances 0.000 claims description 11
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 claims description 9
- -1 aromatic diamine compound Chemical class 0.000 claims description 7
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical group C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 claims description 5
- NSMJMUQZRGZMQC-UHFFFAOYSA-N 2-naphthalen-1-yl-1H-imidazo[4,5-f][1,10]phenanthroline Chemical compound C12=CC=CN=C2C2=NC=CC=C2C2=C1NC(C=1C3=CC=CC=C3C=CC=1)=N2 NSMJMUQZRGZMQC-UHFFFAOYSA-N 0.000 claims description 5
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical class C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 claims description 5
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 5
- 150000004866 oxadiazoles Chemical class 0.000 claims description 5
- 150000003852 triazoles Chemical class 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 27
- 239000012535 impurity Substances 0.000 abstract description 14
- 238000011109 contamination Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 69
- 238000004140 cleaning Methods 0.000 description 35
- 239000007789 gas Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 23
- 239000011347 resin Substances 0.000 description 22
- 229920005989 resin Polymers 0.000 description 22
- 230000007246 mechanism Effects 0.000 description 21
- 238000012545 processing Methods 0.000 description 21
- 238000007789 sealing Methods 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 15
- 238000004020 luminiscence type Methods 0.000 description 14
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 12
- 230000005525 hole transport Effects 0.000 description 12
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 11
- 230000033001 locomotion Effects 0.000 description 11
- 238000000926 separation method Methods 0.000 description 10
- 230000005284 excitation Effects 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 238000001771 vacuum deposition Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 230000005281 excited state Effects 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000005188 flotation Methods 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 229910020323 ClF3 Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J31/00—Apparatus for making beverages
- A47J31/44—Parts or details or accessories of beverage-making apparatus
- A47J31/4403—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J31/00—Apparatus for making beverages
- A47J31/06—Filters or strainers for coffee or tea makers ; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/157—Hole transporting layers between the light-emitting layer and the cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Definitions
- the invention relates to a luminescent device using an organic luminescent element having an anode, a cathode, and a film (referred below to as “organic compound layer”), which includes an organic compound adapted to effect luminescence upon application of an electric field.
- organic compound layer a film
- the present invention relates to a manufacturing of a luminescent element which requires a lower drive voltage and has a longer life than luminescent devices of the related art.
- the luminescent device described in the specification of the present application indicates an image display device or a luminescent device, which use an organic luminescent element as luminescent element.
- the luminescent device includes all of modules, in which a connector, for example, an anisotropic electroconductive film (FPC:Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is mounted to an organic luminescent element, modules, in which a printed-circuit board is provided on a TAB tape or a tip end of a TCP, or modules, in which an IC (integrated circuit) is directly mounted on an organic luminescent element in the COG (Chip On Glass) system.
- a connector for example, an anisotropic electroconductive film (FPC:Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is mounted to an organic luminescent element
- modules in which a printed-circuit board is provided on a TAB tape or a tip end of a TCP
- modules in which an IC (integrated circuit) is directly mounted on
- An organic luminescent element is one adapted to effect luminescence upon application of an electric field.
- a mechanism for luminescence has been said to reside in that an organic compound layer is interposed between electrodes, upon application of voltage thereto electrons filled from a cathode and holes filled from an anode recombine together at a center of luminescence in the organic compound layer to form molecule excitons, and the molecule excitons discharge energy to produce luminescence when returned to the base state.
- kinds of molecule excitons formed by the organic compound can include a singlet excited state and a triplet excited state, while the specification of the present invention contains the case where either of the excited states contributes to luminescence.
- an organic compound layer is normally formed in a thin film below 1 ⁇ m. Also, since the organic luminescent element is a self-luminescent type one, in which the organic compound layer itself emits light, a backlight used in a conventional liquid crystal display is not necessary. Accordingly, the organic luminescent element can be very advantageously formed to be thin and lightweight.
- a time period having elapsed from filling of a carrier to recombination thereof is in the order of several tens of nanosecond taking account of the extent of movement of the carrier in the organic compound layer, and luminescence is achieved in the order of less than one micro second even when the procedure from the recombination of the carrier to luminescence is included. Accordingly, one of the features is that the speed of response is very large.
- the organic luminescent element is a carrier-filling type luminescent element, it can be driven by DC voltage, and is hard to generate noise. With respect to drive voltage, an adequate luminance of 100 cd/m 2 is achieved at 5.5 V by first making the thickness of an organic compound layer a uniform, super-thin film of around 100 nm, selecting an electrode material, which reduces a carrier filling barrier relative to the organic compound layer, and further introducing a single hetero structure (double structure) (Literature 1: C. W. Tang and S. A. VanSlyke, “Organic electroluminescent diodes”, Applied Physics Letters, vol. 51, No. 12, 913-915 (1987)).
- organic luminescent elements Owing to such performances as thin and lightweight, high-speed responsibility, DC low voltage drive, and the like, organic luminescent elements have been given attention as next-generation flat panel display elements. Also, since organic luminescent elements are of self-luminescent type and large in angle of visibility, they are comparatively favorable in visibility and believed to be effective as elements used for displays in portable equipments.
- a carrier filling barrier is made small by using as a cathode a relatively 30 stable Mg:Ag alloy of low work function to enhance an electron injecting quality. This makes it possible to fill a large amount of carrier into the organic compound layer.
- the recombination efficiency of the carrier is improved by leaps and bounds by application of a single hetero structure, in which a hole transporting layer composed of a diamine compound and an electron transporting luminescent layer composed of tris (8-quinolinolato) aluminium (hereinafter written as “Alq 3 ”) are laminated as an organic compound layer, which is explained below.
- the organic luminescent element described in Literature 1 is based on, so to speak, that thought of functional separation, according to which carrying of holes is performed by the hole transporting layer and carrying and luminescence of electrons are performed by the electron transporting luminescent layer.
- Such concept of functional separation has further grown to a concept of double heterostructure (three-layered structure), according to which a luminescent layer is inserted between the hole transporting layer and the electron transporting layer (Literature 3: Chihaya ADACHI, Shizuo TOKITO, Tetsuo TSUTSUI and Shogo SAITO, “Electroluminescence in Organic Films with Three-Layered Structure”, Japanese Journal of Applied Physics, Vol. 27, No. 2, L269-L271 (1988)).
- Such functional separation has an advantage in that the functional separation makes it unnecessary for a kind of organic material to have a variety of functions (luminescence, carrier carrying quality, filling quality of carrier from electrode, and so on) at a time, which provides a wide freedom in molecular design or the like (for example, it is unnecessary to unreasonably search for bipolar materials). That is, a high luminous efficiency can be easily attained by combining materials having a good luminous quality and a carrier carrying quality, respectively.
- a deposition apparatus of the in-line type (multi-chamber scheme) is typically employed in order to prevent contamination of respective materials upon lamination of a hole transport material and a luminescent material, and an electron transport material or the like by vacuum evaporation. Additionally an upper plan view of such deposition apparatus is shown in FIG. 13. In the deposition apparatus shown in FIG.
- a substrate with the anode into a carry-in chamber.
- the substrate is transferred through a first transfer chamber toward an ultraviolet ray irradiation chamber, and is then subjected to cleaning treatment on the surface of such anode, by irradiation of ultraviolet rays in a vacuum environment.
- the anode is made of oxides such as ITO, the anode is oxidized here in a pretreatment chamber.
- a hole transport layer is formed in a vapor evaporation chamber 1301 while forming luminescent layers (in FIG. 13, three colors of red, green and blue) in vacuum evaporation chambers 1302 to 1304 , and forming an electron transport layer in a vacuum evaporation chamber 1305 , and then forming a cathode in a vacuum evaporation chamber 1316 .
- sealing processing is carried out in a sealing chamber, thereby obtaining a luminescent element from a carry-out chamber.
- each of the vacuum evaporation chambers 1301 to 1305 may ordinarily be provided with a single evaporation source (note however that in the vacuum evaporation chambers 1302 to 1304 , two evaporation sources will possibly be required from time to time for formation of a co-vacuum evaporation layer in the case of fabrication of a luminescent layer by doping pigment thereinto).
- a specific apparatus arrangement is employed, in which materials of respective layers are hardly mixed into each other.
- the laminated structure described above will necessarily produce an energy barrier at an interface the substances. Since the presence of an energy barrier inhibits movements of a carrier at the interface, the two following problems are caused.
- the conjugate polymer described in Literature 4 is a bipolar material, and can attain a level equivalent to that of the laminated structure with respect to the recombination efficiency of a carrier. Accordingly, it demonstrates that a single layer structure having less interfaces is actually low in drive voltage provided that a method making use of a bipolar material can make an equivalent recombination efficiency of a carrier without the use of any laminated structure.
- organic interface the carrier transfer between organic materials (e.g., between the hole transport layer and luminescent layer; the interface will hereinafter be called “organic interface”) remains as an unsettled issue and is considered to be an important point in catching up with the low drive voltage provided by the single-layered structure.
- the laminated structure has an advantage in enabling easily enhancing the recombination efficiency of a carrier and enlarging a range of material selection in terms of functional separation and on the other hand formation of many organic interfaces impedes movements of a carrier and has an influence on lowering of drive voltage and brilliance.
- the present invention provides deposition apparatuses based on concepts different from the prior used multilayer structures for fabricating an element having functions of a variety of kinds of materials in a similar manner to the function separation of multilayer structures while at the same time relaxing energy barriers present in organic compound layers to thereby enhance the mobility of electrical carriers.
- Another object of the invention is to provide deposition method employing these deposition apparatuses.
- FIG. 1B It is considered that applying the structure shown in FIG. 1B causes any energy barrier existing between function regions to decrease when compared to the prior art structure shown in FIG. 1A, resulting in an improvement in carrier injectability.
- FIG. 1C an energy band diagram in the structure of FIG. 1A
- FIG. 1D its energy band diagram becomes as shown in FIG. 1D.
- the energy barrier between function regions is relaxed by formation of such mixed region therebetween. Thus, it becomes possible to prevent drive voltage drop-down and luminance reduction.
- a feature unique thereto is that a mixed region comprised of the organic compound constituting the first function region and organic compound constituting the second function region is fabricated between the first function region and the second function region.
- first organic compound and second organic compound are different in nature from each other while each having its nature as selected from the group consisting of hole injectability for receipt of holes from the anode, hole transportability with hole mobility greater than electron mobility, electron transportability with electron mobility greater than hole mobility, electron injectability for receipt of electrons from the cathode, blocking ability for enabling preclusion of movement of either holes or electrons, and luminescent ability exhibiting luminescence.
- the organic compound with high hole injectability is preferably made of phthalocyanine-based compound; the organic compound with high hole transportability may be aromatic diamine compound, and, the organic compound with high electron transportability may be a metal complex that contains therein quinoline skeleton, metal complex containing benzoquinoline skeleton or oxadiazole derivative or triazole derivative or phenanthroline derivative.
- the organic compound exhibiting luminescence may preferably be a metal complex containing therein quinoline skeleton with stabilized light emission, metal complex containing benzooxazole skeleton, or metal complex containing benzothiazole skeleton.
- Combinations A to E may be employable solely (e.g. only “A”) or alternatively some of them are introduced together in a composite fashion (e.g. both “A” and “B”).
- TABLE 1 Combination 1st Function Region 2nd Function Region A Hole Injectability Hole Transportability B Electron Injectability Electron Transportability C Hole Transportability Luminescent ability D Electron Transportability Luminescent ability E Electron Transportability Blocking Ability
- the excitation energy of such luminescent region is lower than the excitation energy of the hole region and the excitation energy of electron transport region.
- the term “excitation energy” used in this specification is to be understood to mean an energy difference between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO).
- the luminescent region is comprised of both host material and luminescent material (dopant) low in excitation energy than the host material and designed such that the excitation energy of such dopant is lower than the excitation energy of hole transport region and the excitation energy of electron transport layer.
- the dopant is made of certain material of the carrier trap type then it is also possible to increase the recombination efficiency of carriers.
- organic luminescent elements capable of converting energy (referred below to as “triplet excited energy”), which is discharged when returned to a base state from a triplet excited state, into luminance, have been successively presented, and notice has been taken of their luminous efficiency (Literature 7: D. F. O'Brien, M. A. Baldo, M. E. Thompson and S. R. Forrest, “Improved energy transfer in electrophosphorescent devices”, Applied Physics Letters, Vol. 74, No.
- These organic luminescent elements capable of converting triplet excited energy into luminance referred below to as “triplet luminescent diode”) can attain higher intensity luminance and higher luminous efficiency than in the related art.
- Literature 8 has presented an example, in which half-life of luminance is about 170 hours in the case where the initial luminance is set to 500 cd/m 2 , thus causing a problem in service life of an element.
- application of the invention to triplet light emitting diodes can provide a highly functional luminescent element, which is long in service life in addition to high intensity luminance and high luminous efficiency based on luminance from a triplet excited state.
- the feature lies in that a plurality of function regions are deposited within the same deposition chamber having a plurality of evaporation sources to thereby form a luminescent element having the mixed region stated supra.
- a deposition chamber 210 as used in the deposition apparatus of this invention with reference to FIG. 2A.
- a metal mask 202 being fixed to a holder 201 is furnished beneath a substrate 200 , with an evaporation source 203 a to 203 c being provided further beneath it.
- Evaporation sources 203 ( 203 a to 203 c ) comprises organic compounds 204 ( 204 a to 204 c ) for fabrication of organic compound layer, material chambers 205 ( 205 a to 205 c ) for preparing the organic compounds therein, and shutters 206 ( 206 a to 206 c ).
- the evaporation source or a substrate to be subjected to vacuum evaporation be movably (rotatably) arranged to ensure that film is fabricated uniformly.
- the material chambers 205 are made of conductive metal material and have a structure shown in FIG. 17.
- the organic compounds 204 are vaporized and then deposited onto a surface of the substrate 200 upon heat up of the internal organic compounds 204 ( 204 a to 204 c ) due to resistance occurring when a voltage is applied to the material chambers 205 ( 205 a to 205 c ).
- the term “surface of the substrate 200 ” is to be understood to involve the substrate and more than one thin-film as formed over this substrate, here, an anode is formed on the substrate.
- the shutters 206 control vacuum evaporation of the vaporized organic compounds 204 ( 204 a to 204 c ).
- the shutters when the shutters are opened, it is possible to deposit the vaporized organic compounds 204 ( 204 a to 204 c ) due to heat application by vacuum evaporation.
- the organic compounds 204 ( 204 a to 204 c ) be pre-vaporizable by heat application prior to the vacuum evaporation process for enabling effectuation of any vacuum evaporation immediately after the shutters 2 () 6 ( 206 a to 206 c ) are opened during vacuum evaporation, thus shortening a time period required for deposition.
- an organic compound layer having a plurality of function regions is formed within a single deposition chamber, evaporation sources 203 a to 203 c are provided.
- Organic compounds vaporized at respective evaporation sources 203 a to 203 c behave to upwardly and then pass through openings (not shown) that are defined in the metal mask 202 to be deposited on the substrate 200 .
- a first organic compound 204 a furnished in the first material chamber 205 a is subject to vacuum evaporation.
- the first organic compound 204 a is vaporized in advance by resistive heat up and thus dispersed in the direction of substrate 200 upon opening of the shutter 206 a during vacuum evaporation.
- a cathode is formed, thereby completing a luminescent element as fabricated by the deposition apparatus of the present invention.
- other organic compound layers as shown in FIG. 2C, after forming a first function region 220 using the first organic compound 204 a , form a first mixed region 221 consisting essentially of the first organic compound 204 a and the second organic compound 204 b , and further form a second function region 222 by using the second organic compound 204 b . Then, simultaneously perform vacuum evaporation of third organic compound 204 c while letting shutter 206 c open temporarily during formation of the second function region 222 , thereby forming a second mixed region 223 .
- a material chamber with the organic material used for deposition may be designed to move at an optimal location beneath the substrate during deposition process in order to improve the deposition property or, alternatively, the substrate is modified to have a function of moving at an optimal position overlying the material chamber for the same purpose.
- the deposition chamber of this invention is provided with an attachment-preventing shield 207 for preventing attachment of organic compounds to the inner wall of such deposition chamber during vacuum evaporation.
- an attachment-preventing shield 207 for preventing attachment of organic compounds to the inner wall of such deposition chamber during vacuum evaporation.
- Providing this attachment-preventing shield 207 makes it possible to deposit those organic compound components that have failed to be deposited on the substrate.
- a heater 208 is provided in contact therewith, wherein the use of this heater 208 enables the entirety of such attachment-preventing shield 207 to be heated. Additionally, heating the attachment-preventing shield 207 makes it possible to vaporize the organic compounds attached to the shield 207 . This in turn makes it possible to achieve successful cleaning of the interior of deposition chamber.
- the deposition apparatus of the invention capable of fabricating the above-discussed organic compound layers enables formation of an organic compound layer having a plurality of function regions within the same deposition chamber, it is possible to form a mixed region at the interface between function regions without letting the function region interface be contaminated by impurities. From the foregoing, it is apparent that a luminescent element comprising multiple functions is manufacturable without showing any distinct multilayer structures (that is, without associating any distinct organic interfaces).
- FIGS. 1A through 1D are diagrams for explanation of an element structure as fabricated by a deposition apparatus of the present invention
- FIG. 2A is a diagram for explanation of a deposition chamber and FIGS. 2B and 2C are diagrams of elements as fabricated by a deposition chamber shown in FIG. 2A;
- FIGS. 3A and 3B are diagrams explaining about a deposition apparatus
- FIGS. 4A through 4E are diagrams for explanation of a metal mask alignment method
- FIG. 5 is a diagram explaining on a deposition apparatus
- FIGS. 6A and 6B are diagrams explaining on a deposition chamber
- FIGS. 7A and 7B are diagrams explaining on a deposition apparatus
- FIGS. 8A and 8B are diagrams explaining on a deposition apparatus
- FIG. 9 is a diagram explaining on a luminescent device
- FIGS. 10A and 10B are diagrams explaining on a seal structure
- FIG. 11 is a diagram explaining on a luminescent device
- FIGS. 12A through 12H are diagrams showing examples of electrical instruments
- FIG. 13 is a diagram for explanation of one typical prior art:
- FIG. 14 is a diagram explaining on a deposition apparatus.
- FIG. 15 is a diagram explaining on a luminescent device.
- FIGS. 16A through 16C are diagrams explaining on a pixel portion.
- FIG. 17 is a diagram explaining on material chambers.
- FIG. 3A is a diagram showing an upper plan view of the deposition apparatus
- FIG. 3B shows a cross-sectional view thereof. Note here that common components will be designated by common reference numerals. Also there is shown an example which is arranged so that three kinds of organic compound layers (red, green, blue) are formed in each deposition chamber of a deposition apparatus of the inline scheme having three deposition chambers.
- reference numeral “ 300 ” denotes a loading chamber, wherein a substrate prepared in this load chamber is transferred toward a first alignment chamber 301 .
- first alignment chamber 301 alignment of a metal mask 303 fixed to a holder 302 in advance is done with the holder 302 , thereby a substrate 304 of pre-vacuum evaporation is formed on the alignment-finished metal mask 303 , wherein one electrode (here, anode) comprising a luminescent element is formed on the substrate 304 .
- one electrode here, anode
- the substrate 304 and metal mask 303 are made integral together to be transferred toward a first deposition chamber 305 .
- FIGS. 4A through 4E An explanation will now be given of a positional relationship of the holder 302 for fixation of the metal mask 303 and substrate 304 with reference to FIGS. 4A through 4E. Note that in these drawings, components identical to those of FIGS. 3A and 3B will be denoted by the same reference numerals.
- FIG. 4A A sectional structure is shown in FIG. 4A.
- the holder 302 shown herein is generally constituted from a mask holder 401 , a shaft 402 , a substrate holder 403 , control mechanism 404 and auxiliary pins 405 . Additionally the metal mask 303 is fixed in a way aligned with a projection 406 on the mask holder 401 , with the substrate 304 mounted on the metal mask 303 . Additionally the substrate 304 on the metal mask 303 is fixed by the auxiliary pins 405 .
- FIG. 4B An upper plan view in a region 407 of FIG. 4A is shown in FIG. 4B. Additionally the substrate 304 is fixed by the substrate holder 403 shown in FIG. 4A and FIG. 4B. Further, a sectional view as taken along line B-B′ of FIG. 4B is shown in FIG. 4C. Assuming that the position of the metal mask 303 shown in FIG. 4C is at the time of deposition, a position of the metal mask 303 shown in FIG. 4D with the shaft 402 moved in Z-axis direction is during alignment process.
- the shaft 402 is movable in any one of X-axis and Y-axis, and Z-axis directions, further, movement of gradient ( 0 ) of an X-Y plane with respect to the Z-axis is also possible.
- the control mechanism 404 outputs a movement information from both a position information obtained from a charge-coupled device (CCD) camera and a position information input therein in advance, thereby the position of the mask holder can be identical with a specified position through the shaft 402 coupled to the control mechanism 404 .
- CCD charge-coupled device
- FIG. 4E an enlarged view of the metal mask 303 in a region 408 is shown in FIG. 4E.
- the metal mask 303 as used herein is structured from a mask a 409 and a mask b 410 formed using different materials each other. Additionally during vacuum evaporation, organic compounds that have passed through these openings 411 will be fabricated on the substrate. Their shapes are contrived to improve the deposition accuracy upon execution of vacuum evaporation using the masks, and are used in such a manner that the substrate 304 and the mask b 410 are in contact with each other.
- the openings of the metal mask 303 may be of a rectangular, elliptical, or linear shape, in addition, these may be designed into a matrix-like layout or delta layout.
- the first deposition chamber 305 in FIG. 3A is provided with a plurality of evaporation sources 306 . Additionally each the evaporation sources 306 consists of a material chamber (not shown) in which organic compounds are prepared and a shutter (not shown) for controlling through open/close operations dispersion of vaporized organic compound in the material chamber toward outside of the material chamber.
- the plurality of evaporation sources 306 provided in the first deposition chamber 305 are provided with organic compounds having different functions for constituting an organic compound layer of a luminescent element. respectively.
- the organic compounds as used herein may refer to organic compounds having its nature of hole injectability for receipt of holes from the anode, hole transportability with hole mobility greater than electron mobility, electron transportability with electron mobility greater than hole mobility, electron injectability for receipt of electrons from the cathode, blocking ability for enabling inhibition of movement of either holes or electrons, and luminescent ability exhibiting light emission.
- the organic compound with a high hole injectability may preferably be phthalocyanine-based compound; the organic compound with a high hole transportability is preferably aromatic diamine compound; and, the organic compound with a high electron transportability is preferably a metal complex containing benzoquinoline skeleton, oxadiazole derivative, triazole derivative, or still alternatively phenanthroline derivative.
- the organic compound exhibiting luminescent ability is preferably a metal complex containing quinoline skeleton, metal complex containing benzooxazole skeleton, or metal complex containing benzothiazole skeleton which emit a steady light.
- the organic compounds provided in these evaporation sources are deposited by a vacuum evaporation in order, using the method discussed in FIG. 2A, resulting in formation of a first organic compound layer (here, red) having a plurality of function regions and mixed regions.
- the substrate 304 is transported toward a second alignment chamber 307 .
- the second alignment chamber 307 after once substrate 304 is separated from the metal mask 303 , alignment of the metal mask 303 is done in such a manner that it matches a position whereat a second organic compound layer is to be fabricated. And, after completion of the alignment, the substrate 304 and the metal mask 303 are overlapped with each other and fixed together.
- a second deposition chamber 308 transfers the substrate 304 toward a second deposition chamber 308 .
- the second deposition chamber 308 is also provided with a plurality of evaporation sources.
- a plurality of organic compounds are deposited by a vacuum evaporation in order, resulting in formation of a second organic compound layer (here, green) having a plurality of function regions and mixed regions.
- the substrate 304 transfers the substrate 304 toward a third alignment chamber 309 .
- the third alignment chamber 309 after once the substrate 304 is separated from the metal mask 303 , alignment of the metal mask 303 is done in such a way that it matches a position whereat a third organic compound layer is to be fabricated. And, after completion of the alignment, the substrate 304 and metal mask 303 are overlapped with each other and fixed together.
- the substrate 304 transfers to a third deposition chamber 310 .
- the third deposition chamber 310 is also provided with a plurality of evaporation sources.
- a plurality of organic compounds are deposited by a vacuum evaporation in order, resulting in formation of a third organic compound layer (here, blue) having a plurality of function regions and mixed regions.
- the deposition apparatus of the present invention should not be limited only to this structure and may alternatively be modified to have a structure comprising a deposition chamber in which the cathode is formed on an organic compound layer and a processing chamber capable of sealing the luminescent element. Additionally the deposition order of the organic compound layers which emit red, green and blue light should not be limited to the above-stated one.
- the cleaning preliminary chamber 313 let radicals generate by decomposition of a reactive gas such as NF 3 or CF 4 and then introduce them into the second alignment chamber 307 to thereby enable cleaning at the second alignment chamber 307 .
- a reactive gas such as NF 3 or CF 4
- the metal mask can be cleanup by providing used metal mask in the second alignment chamber 307 in advance.
- introducing the radicals into the second deposition chamber 308 also makes it possible to clean up the inside of the second deposition chamber 308 .
- the second alignment chamber 307 and second deposition chamber 308 are connected with the cleaning preliminary chamber 313 through gates (not shown) respectively, wherein the gates are designed to open upon introduction of radicals.
- reference numeral 501 denotes a load chamber, from which a substrate is transported.
- substrate as used in this embodiment is to be understood to mean the one with either an anode or cathode (anode used in this embodiment) for use as one electrode of a luminescent element being formed thereon.
- the load chamber 501 comes with a gas exhaust system 500 a , wherein this exhaust system 500 a is constituted including a first valve 51 , a turbo molecular pump 52 , a second valve 53 , a third valve 54 and a dry pump 55 .
- a material such as aluminum or stainless steel (SUS) with mirror surfaces through treatment of electro polishing is used on the internal wall planes thereof due to its capability to reduce an adsorption of the impurity such as oxygen and water by making surface area of the inside wall smaller.
- SUS stainless steel
- internal members made of material such as ceramics or else are employed as the inside material which are treated that pores become extremely less. Note that these materials have surface smoothness with the center average roughness being less than or equal to 30 ⁇ .
- the first valve 51 is a main valve having a gate valve, a butterfly valve that functions also as a conductance valve will alternatively be used.
- the second valve 53 and the third valve 54 are fore valves.
- a pressure of the load chamber 501 is roughly reduced by the dry pump 55 with the second valve 53 opened, next, a pressure of the load chamber 501 is reduced to a high degree of vacuum by the turbo molecular pump 52 with the first valve 51 and third valve 54 open.
- the turbo molecular pump may be replaced with a mechanical booster pump; alternatively, the turbo molecular pump is usable after increased the vacuum degree by the mechanical booster pump.
- the one indicated by numeral 502 is an alignment chamber.
- alignment chamber A 502 alignment chamber A 502 .
- the method explained in FIGS. 4A through 4E may be employed in the alignment method here.
- the alignment chamber A 502 comprises a gas exhaust system 500 b and is shut and shielded from the load chamber 501 by a gate, not shown.
- the alignment chamber A 502 is provided with a cleaning preliminary chamber 513 a for producing therein radicals by decomposition of a reactive gas such as NF 3 or CF 4 or else and then introducing this into the alignment chamber A 502 , to thereby enable of cleanup at the alignment chamber A 502 .
- a reactive gas such as NF 3 or CF 4 or else and then introducing this into the alignment chamber A 502 , to thereby enable of cleanup at the alignment chamber A 502 .
- the used metal mask can be cleanup by providing the metal mask in the alignment chamber A 502 in advance.
- deposition chamber A 503 denotes a deposition chamber for fabrication of a first organic compound layer by vacuum evaporation methods, which will be called deposition chamber A 503 hereinafter.
- the deposition chamber A 503 comprises an exhaust system 500 c . In addition, this is shut and shielded from the alignment chamber A 502 by a gate, not shown.
- the deposition chamber A 503 is provided with a cleaning preliminary chamber 513 b .
- the interior of the deposition chamber A 503 can be cleanup by introducing into the deposition chamber A 503 radicals produced through decomposition of a reactive gas such as NF 3 or CF 4 or else.
- a deposition chamber that has the structure shown in FIG. 2A is provided as the deposition chamber A 503 for fabrication of the first organic compound layer which emits red light.
- the evaporation sources are a first evaporation source provided with an organic compound with hole injectability, a second evaporation source provided with an organic compound with hole transportability, a third evaporation source provided with an organic compound with hole transportability for use as a host of organic compound with luminescent ability, a fourth evaporation source provided with an organic compound with luminescent ability, a fifth evaporation source provided with an organic compound with blocking ability, and a sixth evaporation source provided with an organic compound with electron transportability.
- Cu—Pc copper phthalocyanine
- o-NPD 4,4′-bis [N-(1-naphthyl)-N-phenyl-amino]-biphenyl
- CBP 4,4′-dicarbazole-biphenyl
- PtOEP 18-octaethyl-21H, 23H-porphyrin-platinum
- BCP bathocuproin
- Alq 3 8-quinolinolat aluminum
- the organic compound layer comprising regions having the functions of hole injectability, hole transportability, luminescent ability, and electron transportability can be formed over the anode by depositing these organic compound in order through a vacuum evaporation.
- a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds consisting of both function regions.
- mixed regions are formed respectively at an interface between the hole injection region and the hole transport region and at an interface between the hole transport region and the electron transport region including a luminescent region.
- both Cu—Pc and ⁇ -NPD are deposited by a vacuum evaporation at a same time to thereby form a first mixed region with a film thickness of 5 to 10 nm.
- fabricate a film of CBP to a thickness of 25 to 40 nm, thus forming a third function region.
- both CBP and PtOEP are deposited at a same time, thereby forming a third mixed region at the entirety or part of the third function region.
- the third mixed region has luminescent ability.
- both CBP and BCP are deposited by simultaneous vacuum evaporation to a film thickness of 5 to 10 nm, thereby forming a fourth mixed region.
- a BCP film is fabricated to a thickness of 8 nm, thus forming a fourth function region.
- BCP and Alq 3 are deposited by simultaneous vacuum evaporation to a film thickness of 5 to 10 nm, resulting in formation of a fifth mixed region.
- a film of Alq 3 is formed to a thickness of 25 nm, thus enabling formation of a fifth function region.
- the organic compound layer is then formed by vacuum evaporation of these organic compounds.
- the present invention should not be limited only to the above and may use a plurality of organic compounds.
- the organic compound provided in a single evaporation source should not always be limited to a single one and may alternatively be multiple ones.
- another organic compound that serve as a dopant may be provided together.
- the first organic compound layer has a plurality of functions and prior known materials may be used as these organic compounds composing an organic compound layer which emits the red light.
- the evaporation sources may be designed so that a microcomputer is used to control the deposition speeds thereof. Additionally, with this arrangement, it is preferable to control the ratio of mixture upon simultaneous fabrication of a plurality of organic compound layers.
- the one indicated by numeral 506 is an alignment chamber.
- alignment of a metal mask and positioning of a substrate on the metal mask are done for deposition at a deposition chamber to which it will next be transferred.
- This will be called an alignment chamber B 506 .
- the method explained in FIGS. 4A through 4E may be employed in the alignment method here.
- the alignment chamber B 506 comprises a gas exhaust system 500 d and is shut and shielded from the deposition chamber A 503 by a gate not shown. It further comprises a cleaning preliminary chamber 513 c that is shut and shielded from the alignment chamber B 506 by a gate not shown, in a similar way to the alignment chamber A 502 .
- numeral 507 denotes a deposition chamber for fabrication of a second organic compound layer by vacuum evaporation , which will be called the deposition chamber B 507 .
- This deposition chamber B 507 is provided with an exhaust system 500 e .
- it is shut and shielded from the alignment chamber B 506 by a gate. not shown.
- it comprises a cleaning preliminary chamber 513 d which is shut and shielded from the deposition chamber B 507 by a gate not shown, in a similar way to the deposition chamber A 503 .
- a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber B 507 for fabrication of a second organic compound layer which emits green light.
- the evaporation sources are a first evaporation source provided with an organic compound with hole injectability, a second evaporation source and a third evaporation source each provided with organic compounds with hole transportability, a fourth evaporation source provided with a host material with hole transportability, a fifth evaporation source provided with an organic compound with luminescent ability, a sixth evaporation source provided with an organic compound with blocking ability, and a seventh evaporation source provided with an organic compound with electron transportability.
- Cu—Pc is employed as the organic compound with hole injectability provided in the first evaporation source
- MTDATA is employed as the organic compound with hole transportability provided in the second evaporation source
- ⁇ -NPD is employed as the organic compound with hole transportability provided in the third evaporation source
- CBP is employed as the host material with hole transportability provided in the fourth evaporation source
- tris (2-phenylpyridine) iridium (Ir(ppy) 3 ) is employed as the organic compound with luminescent ability provided in the fifth evaporation source
- BCP is employed as the organic compound with blocking ability provided in the sixth evaporation source
- Alq 3 is employed as the organic compound with electron transportability provided in the seventh evaporation source.
- the second organic compound layer can be formed over the anode by successive vacuum evaporation of these organic compounds, which comprises regions having functions of hole transportability, luminescent ability, blocking ability and electron transportability.
- a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming both the function regions. More specifically, mixed regions are formed respectively at an interface between the hole transport region and the blocking region and at an interface between the blocking region and the electron transport region.
- both Cu—Pc and MTDATA are deposited by a vacuum evaporation at a same time to thereby form a first mixed region with a film thickness of 5 to 10 nm.
- a film of ⁇ -NPD to a thickness of 10 nm, thereby forming a third function region.
- (Ir(ppy) 3 ) is deposited by simultaneous vacuum evaporation at part or entirety of the fourth function region, thus forming a fourth mixed region; then, simultaneously deposited CBP and BCP by vacuum evaporation to form a fifth mixed region with a thickness of 5 to 10 nm; next, deposit a BCP film of 10-nm thickness to thereby form a fifth function region; next, simultaneously deposit BCP and Alq 3 by vacuum evaporation to form a sixth mixed region with a film thickness of 5 to 10 nm; lastly, form a film of Alq 3 to a thickness of 40 nm, thus forming a sixth function region to thereby form a second organic compound layer.
- the organic compound layer is formed by vacuum evaporation from seven evaporation sources provided with organic compounds having different functions respectively as the second organic compound layer.
- the present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources. Additionally prior known materials may be used as organic compounds with a plurality of functions for forming an organic compound layer which emits green light.
- the one indicated by numeral 508 is an alignment chamber.
- alignment of a metal mask and positioning of a substrate on the metal mask are done for deposition at a deposition chamber to which it will next be transferred.
- This will be called an alignment chamber C 508 .
- the method explained in FIGS. 4A through 4E may be employed in the alignment method here.
- the alignment chamber C 508 comprises a gas exhaust system 500 f and is shut and shielded from the deposition chamber B 507 by a gate not shown. It further comprises a cleaning preliminary chamber 513 e that is shut and shielded from the alignment chamber C 508 by a gate not shown, in a similar way to the alignment chamber A 502 .
- numeral 509 denotes a deposition chamber for fabrication of a second organic compound layer by vacuum evaporation , which will be called the deposition chamber C 509 .
- This deposition chamber C 509 is provided with an exhaust system 500 g . In addition it is shut and shielded from the alignment chamber C 508 by a gate not shown. Further, it comprises a cleaning preliminary chamber 513 f which is shut and shielded from the deposition chamber C 509 by a gate not shown, in a similar way to the alignment chamber A 503 .
- a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber C 509 for fabrication of a third organic compound layer which emits blue light.
- the evaporation sources are a first evaporation source provided with an organic compound with hole injectability, a second evaporation source provided with organic compound with luminescent ability a third evaporation source provided with blocking ability, a fourth evaporation source provided with an organic compound with electron transportability.
- Cu—Pc is employed as the organic compound with hole injectability provided in the first evaporation source
- ⁇ -NPD is employed as the organic compound with luminescent ability provided in the second evaporation source
- BCP is employed as the organic compound with blocking ability provided in the third evaporation source
- Alq 3 is employed as the organic compound with electron transportability provided in the fourth evaporation source.
- the third organic compound layer can be formed over the anode by successive vacuum evaporation of these organic compounds, which comprises regions having functions of hole injectability, luminescent ability, blocking ability and electron transportability.
- a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming both the function regions. More specifically, mixed regions are formed respectively at an interface between the luminescent region and the blocking region and at an interface between the blocking region and the electron transport region.
- both Cu—Pc and ⁇ -NPD are deposited by a vacuum evaporation at a same time to thereby form a first mixed region with a film thickness of 5 to 10 nm.
- a film of BCP to a thickness of 10 nm, thereby forming a third function region.
- a third mixed region is formed in thickness from 5 to 10 nm; lastly, form a film of Alq 3 to a thickness of 40 nm, to thereby form a third organic compound layer.
- the organic compound layer is formed by successive vacuum evaporation from fourth evaporation sources provided with four organic compounds having different functions respectively as the third organic compound layer.
- the present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources.
- an organic compound provided in a single evaporation source is not limited to have one kind, may be a plurality of ones.
- another organic compound that serve as a dopant may be provided together.
- prior known materials may be used as organic compounds with a plurality of functions for forming an organic compound layer which emits blue light.
- the organic compound layer which emits red light is formed in the first deposition chamber A 503 while forming the organic compound layer which emits green light in the second deposition chamber B 507 and also forming the organic compound layer which emits blue light in the third deposition chamber C 509 .
- the order of formation of these layers should not be limited only the above order.
- One of the organic compound layers which emit lights of red, green, and blue, respectively may be formed within one of the deposition chamber A 503 , deposition chamber B 507 , and deposition chamber C 509 .
- an additional deposition chamber may be provided for forming an organic compound layer which emits white light therein.
- numeral 510 denotes a deposition chamber for formation of a conductive film being either the anode or the cathode of a luminescent element (a metal film used as the cathode in this embodiment) by vacuum evaporation, which will be called the deposition chamber D 510 .
- the deposition chamber D 510 comprises an exhaust system 500 h , in addition, is shut and shielded from the deposition chamber C 509 by a gate not shown. Further, it comprises a cleaning preliminary chamber 513 c which is sealed and shielded from the deposition chamber D 510 by a gate not shown, in a similar manner to that of the deposition chamber A 503 .
- a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber D 510 . Accordingly, in regard to a detailed operation of the deposition chamber D 510 , refer to the explanation of FIG. 2A.
- an Al—Li alloy film (film made of an alloy of aluminum and lithium) is deposited as the conductive film used as the cathode of the luminescent element. Additionally it will also possible to employ co-vacuum evaporation of aluminum and an element belonging to either the group I or group II of the periodic table.
- a CVD chamber may be provided here for formation of an insulating film such as a silicon nitride film, silicon oxide film and DLC film or else as a protective film (passivation film) of the luminescent element.
- an insulating film such as a silicon nitride film, silicon oxide film and DLC film or else as a protective film (passivation film) of the luminescent element.
- a gas purifying machine it will be preferable that a gas purifying machine be provided for increasing in advance the purity of a material gases used in the CVD chamber.
- numeral 511 denotes a sealing chamber, which comprises an exhaust system 500 i . In addition, it is shut and shielded from the deposition chamber D 510 by a gate not shown.
- processing is to be done for finally enclosing a luminescent element in a sealed space.
- This processing is the treatment for protecting the luminescent element formed against oxygen and water, and employs a means for mechanically enclosing it by a cover material or alternatively for enclosing it by either thermally hardenable resin or ultraviolet-ray hardenable resin material.
- cover material used may be glass, ceramics, plastic or metal
- the cover material must have optical transmissivity in cases where light is emitted toward the cover material side.
- cover material and a substrate with the above-stated luminescent element formed thereon are adhered together by use of a seal material such as thermal hardenable resin or ultraviolet-ray hardenable resin or else, thereby forming an air-tight sealed space by letting the resin be hardened through thermal processing or ultraviolet ray irradiation processing. It is also effective to provide in this sealed space a moisture absorbable material, typical example of which is barium oxide.
- a mechanism for irradiation of ultraviolet light to the interior of the seal chamber 511 (referred to as the “ultraviolet light irradiation mechanism” hereinafter) is provided, which is arranged so that ultraviolet light as emitted from this ultraviolet light irradiation mechanism is used to harden the ultraviolet-ray hardenable resin.
- numeral 512 is an unload chamber, which comprises an exhaust system 500 j .
- the substrate with luminescent element formed thereon will be taken out of here.
- the deposition apparatus indicated in this embodiment may be provided with a function of enabling replacement of an organic compound as shown in FIGS. 6A and 6B.
- a deposition chamber 601 comprises a substrate 602 .
- an organic compound for formation of an organic compound layer on the substrate is provided in an evaporation source 603 .
- a evaporation source 603 is provided in a material exchange chamber 604 separated from the deposition chamber 601 with the substrate furnished therein through a gate 605 .
- the material exchange chamber 604 is separated from the deposition chamber 601 by closure of the gate 605 , organic compounds furnished in the evaporation source of the material exchange chamber 604 can be added or exchange by returning the interior of the material exchange chamber 604 to an atmospheric pressure via an exhaust system 606 and then taking the organic compounds out as shown in FIG. 6A.
- the material exchange chamber 604 is returned to its original state again as shown in FIG. 6B, then, interior of the material exchange chamber 604 is set in a vacuum state by the exhaust system 606 , and, after it has become the same pressure condition as the interior of deposition chamber, open the gate 605 .
- the exhaust system 606 is set in a vacuum state by the exhaust system 606 , and, after it has become the same pressure condition as the interior of deposition chamber, open the gate 605 .
- the material exchange chamber 604 is provided with a heater for heating the material thus exchanged. Preheating the material makes it possible to remove away impurities such as water or the like. It will be desirable that a temperature applied at this time be equal to or less than 200° C.
- reference numeral 701 denotes a transfer chamber, wherein this transfer chamber 701 comprises a transfer mechanism A 702 for performing transport of a substrate 703 .
- the transfer chamber 701 is set in a pressure-reduced atmosphere and is coupled by a gate with each processing chamber. A substrate is transported to each processing chamber by the transfer mechanism A 702 upon opening of the gate.
- turbo molecular pump magnetic floatation type
- cryopump is employable for pressure reduction of the transfer chamber 701
- turbo molecular pump of the magnetic flotation type is preferable in order to obtain high-degree vacuum states with higher purity.
- each processing chamber is set in a pressure-reduced atmosphere so that all the processing chambers directly coupled to the transfer chamber 701 are provided with vacuum pumps (not shown). While dry pumps, mechanical booster pumps, turbo molecular pumps (magnetic floatation type) or cryopumps are employable as the vacuum pumps, the turbo molecular pumps of the magnetic flotation type are preferable in this case also.
- numeral 704 denotes a load chamber for performing setting (installation) of a substrate.
- the load chamber 704 is coupled by a gate 700 a with the transfer chamber 701 , at here a carrier (not shown) with a substrate 703 mounted thereon is arranged.
- the load chamber 704 can also do double-duty as a chamber that transfers a substrate which element formation is finished toward the sealing chamber. Additionally the load chamber 704 may alternatively have separated rooms for carry-in of the substrate and for carry-out of the substrate.
- the load chamber 704 comprises the above described vacuum pomp and a purge line for introduction of a high-purity nitride gas or noble gas.
- the vacuum pump used herein is preferably a turbo molecular pump. Further, this purge line is provided with a gas refining machine for removal in advance of impurities (oxygen and water) of such gases to be introduced into the apparatus.
- a substrate which a transparent conductive film used as the anode of luminescent element is formed thereon is used as the substrate 703 .
- the substrate 703 is set in a carrier with its deposition surface being directed downwardly. This is for performing of face-down scheme (also known as “depo-up” scheme) when later performing deposition by vacuum evaporation methods.
- the face-down scheme is to be understood to mean a scheme for performing deposition while letting the deposition surface of a substrate being directed downwardly. With this scheme, it is possible to suppress attachment of contaminant particles such as dusts.
- the one indicated by numeral 705 is an alignment chamber for alignment of a metal mask and for matching position between a metal mask and a substrate with either the anode or the cathode of luminescent element (anode in this embodiment) formed thereon, wherein the alignment chamber 705 is coupled by a gate 700 b with the transfer chamber 701 .
- the alignment chamber 705 comprises a charge-coupled device (CCD) known as an image sensor, thereby making it possible to accurately perform position alignment of the substrate and its associated metal mask in deposition using the metal mask.
- CCD charge-coupled device
- a cleaning preliminary chamber 722 a is coupled to the alignment chamber 705 .
- An arrangement of the cleaning preliminary chamber 722 a is as shown in FIG. 7B.
- the cleaning preliminary chamber 722 a has a ⁇ wave oscillator 731 for generation of ⁇ waves, wherein ⁇ waves generated at here will be sent through a wave guide tube 732 toward a plasma discharge tube 733 .
- ⁇ waves of about 2.45 GHz are radiated from the ⁇ wave oscillator 731 used here.
- a reactive gases are supplied to the plasma discharge tube 733 from a gas inlet tube 734 .
- NF 3 is used as the reactive gas, although other gases such as CF 4 and ClF 3 may be used as reactive gases.
- the reactive gas is decomposed by ⁇ wave in the plasma discharge tube 733 , causing radicals to generate.
- These radicals are guided to pass through the gas inlet tube 734 to introduce the alignment chamber 705 as coupled via a gate (not shown) thereto.
- the plasma discharge tube 733 may be provided with a reflection plate 735 for efficient supplement of ⁇ waves.
- the alignment chamber 705 comprises a metal mask with an organic compound layer attached thereto. And open a gate (not shown) provided between the cleaning preliminary chamber 722 a and the alignment chamber 705 , thereby enabling introduction of radicals into the alignment chamber 705 . This makes it possible to perform cleaning of the metal mask.
- the technique for cleaning the alignment chamber by use of the thus method is one of the preferred modes of the present invention so that this invention should not be limited thereto. Accordingly, it may also be performed a dry cleaning by introducing reactive gases into the deposition chamber to thereby produce a plasma within this deposition chamber, alternatively, a physical cleaning by sputter methods through introduction of an Ar gas or else.
- numeral 706 denotes a deposition chamber used for deposition of an organic compound layer by vacuum evaporation method, which will be called the deposition chamber A 706 hereinafter.
- the deposition chamber A 706 is coupled via a gate 700 c to the transfer chamber 701 .
- a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber A 706 .
- a first organic compound layer capable of emitting red light is formed at a deposition unit 707 within the deposition chamber A 706 .
- a plurality of evaporation sources are provided with the deposition chamber A 706 , practically, there are provided a first evaporation source comprising an organic compound material with hole injectability, a second evaporation source comprising an organic compound with hole transportability, a third evaporation source comprising an organic compound with luminescent ability, and a fourth evaporation source comprising an organic compound with electron transportability.
- the organic compound layer can be formed above the anode, which comprises regions having functions of hole injectability, hole transportability, luminescent ability and electron transportability.
- a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming such both function regions. More specifically, several mixed regions are formed at an interface between the hole injection region and the hole transport region, at an interface between the hole transport region and the luminescent region, and at an interface between the luminescent region and electron transport region, respectively.
- the organic compound layer is formed by successive vacuum evaporation from four evaporation sources provided with four organic compounds having different functions respectively as the first organic compound layer.
- the present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources.
- an organic compound provided in a single evaporation source is not limited to have one kind, may be a plurality of ones.
- another organic compound that serve as a dopant may be provided together.
- the organic compounds having the plurality of functions and forming the organic compound layer which emits red light the ones as indicated in Embodiment 1 is employable, although known materials are freely used in combination where necessary.
- the deposition chamber A 706 is coupled via a gate 700 g to a material exchange chamber 714 .
- the material exchange chamber 714 is provided with a heater for heating organic compounds exchanged. Preheating such organic compounds makes it possible to remove impurities such as water or the like. It will be desirable that a temperature being applied here be 200° C. or below.
- the material exchange chamber 714 is provided with a vacuum pump capable of setting its interior in a pressure reduction, let the interior be set in such vacuum pressure state after heat up processing by addition or exchange of an organic compound from the outside.
- the gate 700 g when it becomes the same pressure state as that within the deposition chamber, open the gate 700 g to thereby enable the evaporation source within the deposition chamber to be provided with an organic compound. Additionally the organic compound is provided at the evaporation source within the deposition chamber by means of a transfer mechanism.
- a cleaning preliminary chamber 722 b is coupled to the deposition chamber A 706 via a gate (not shown). Additionally its practical arrangement is similar to that of the cleaning preliminary chamber 722 a , thus, it is possible by introducing radicals generated in the cleaning preliminary chamber 722 b into the deposition chamber A 706 to remove organic compounds and the like being internally attached to the deposition chamber A 706 .
- numeral 708 denotes a deposition chamber used for deposition of a second organic compound layer by vacuum evaporation method, which will be called the deposition chamber B 708 hereinafter.
- the deposition chamber B 708 is coupled via a gate 700 d to the transfer chamber 701 .
- a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber B 708 .
- the second organic compound layer capable of emitting green light is formed at a deposition unit 709 within the deposition chamber B 708 .
- a plurality of evaporation sources are provided with the deposition chamber B 708 , practically, there are provided a first evaporation source comprising an organic compound with hole transportability, a second evaporation source comprising an organic compound with luminescent ability, a third evaporation source comprising an organic compound with blocking ability, and a fourth evaporation source comprising an organic compound with electron transportability.
- a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming such both function regions. More specifically, several mixed regions are formed at an interface between the hole transport region and the luminescent region, at an interface between the luminescent region and the blocking region, and at an interface between the blocking region and electron transport region, respectively.
- the organic compound layer is formed by successive vacuum evaporation from four evaporation sources provided with four organic compounds having different functions respectively as the second organic compound layer.
- the present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources.
- an organic compound provided in a single evaporation source is not limited to have one kind, may be a plurality of ones.
- another organic compound that serve as a dopant may be provided together.
- the organic compounds having the plurality of functions and forming the organic compound layer which emits green light the ones as indicated in Embodiment 1 is employable. although known materials are freely used in combination where necessary.
- the deposition chamber B 708 is coupled via a gate 700 h to a material exchange chamber 715 .
- the material exchange chamber 715 is provided with a heater for heating organic compounds exchanged. Preheating such organic compounds makes it possible to remove impurities such as water or the like. It will be desirable that a temperature being applied here be 200° C. or below.
- the material exchange chamber 715 is provided with a vacuum pump so that after introducing organic compounds from the outside it is possible to set its interior in a pressure reduction by the vacuum pump. And, when it becomes the same pressure state as that within the deposition chamber, open the gate 700 h to thereby enable the evaporation source within the deposition chamber to be provided with an organic compound. Additionally the organic compound is provided at the evaporation source within the deposition chamber by means of a transfer mechanism.
- a cleaning preliminary chamber 722 c is coupled to the deposition chamber B 708 via a gate (not shown). Additionally its practical arrangement is similar to that of the cleaning preliminary chamber 722 a , thus, it is possible by introducing radicals generated in the cleaning preliminary chamber 722 c into the deposition chamber B 708 to remove organic compounds and the like being internally attached to the deposition chamber B 708 .
- numeral 710 denotes a deposition chamber used for deposition of a third organic compound layer by vacuum evaporation method, which will be called the deposition chamber C 710 hereinafter.
- the deposition chamber C 710 is coupled via a gate 700 e to the transfer chamber 701 .
- a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber C 710 .
- the third organic compound layer capable of emitting blue light is formed at a deposition unit 711 within the deposition chamber C 710 .
- a plurality of evaporation sources are provided with the deposition chamber C 710 , practically, there are provided a first evaporation source comprising an organic compound with hole injectability, a second evaporation source comprising an organic compound with luminescent ability, a third evaporation source comprising an organic compound with blocking ability, and a fourth evaporation source comprising an organic compound with electron transportability.
- a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming such both function regions. More specifically, several mixed regions are formed at an interface between the hole injection region and the luminescent region, at an interface between the luminescent region and the blocking region, and at an interface between the blocking region and electron transport region, respectively.
- the organic compound layer is formed by successive vacuum evaporation from four evaporation sources provided with four organic compounds having different functions respectively as the third organic compound layer.
- the present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources.
- an organic compound provided in a single evaporation source is not limited to have one kind, may be a plurality of ones.
- another organic compound that serve as a dopant may be provided together.
- the organic compounds having the plurality of functions and forming the organic compound layer which emits blue light the ones as indicated in Embodiment 1 is employable, although known materials are freely used in combination where necessary.
- the deposition chamber C 710 is coupled via a gate 700 i to a material exchange chamber 716 .
- the material exchange chamber 715 is provided with a heater for heating organic compounds exchanged. Preheating such organic compounds makes it possible to remove impurities such as water or the like. It will be desirable that a temperature being applied here be 200° C. or below.
- the material exchange chamber 716 is provided with a vacuum pump so that after introducing organic compounds from the outside it is possible to set its interior in a pressure reduction by the vacuum pump. And, when it becomes the same pressure state as that within the deposition chamber, open the gate 700 i to thereby enable the evaporation sources within the deposition chamber to be provided with organic compounds. Additionally the organic compound is provided at the evaporation source within the deposition chamber by means of a transfer mechanism. Additionally, regarding the deposition process within the deposition chamber C 710 , refer to the explanation of FIG. 2A.
- a cleaning preliminary chamber 722 d is coupled to the deposition chamber C 710 via a gate (not shown). Additionally its practical arrangement is similar to that of the cleaning preliminary chamber 722 a , thus, it is possible by introducing radicals generated in the cleaning preliminary chamber 722 d into the deposition chamber C 710 to remove organic compounds and the like being internally attached to the deposition chamber C 710 .
- numeral 712 indicates a deposition chamber for fabricating by vacuum evaporation method a conductive film used as either the anode or cathode of a luminescent element (in this embodiment, a metal film used as the cathode), which chamber will be called the deposition chamber D 712 .
- This deposition chamber D 712 is coupled via a gate 700 f to the transfer chamber 701 .
- an Al—Li alloy film alloy film of aluminum and lithium
- co-vacuum evaporation refers to a vacuum evaporation method that evaporation sources are heated simultaneously and different materials are mixed together at the deposition step.
- the deposition chamber D 712 is coupled via a gate 700 j to a material exchange chamber 717 .
- the material exchange chamber 717 is provided with a heater for heating organic compounds exchanged. Preheating such organic compounds makes it possible to remove impurities such as water or the like. It will be desirable that a temperature being applied here be 200° C. or below.
- the material exchange chamber 717 is provided with a vacuum pump so that after introducing conductive materials from the outside it is possible to set its interior in a pressure reduction by the vacuum pump. And, when it becomes the same pressure state as that within the deposition chamber, open the gate 700 j to thereby enable the evaporation sources within the deposition chamber to be provided with conductive materials.
- a cleaning preliminary chamber 722 e is coupled to the deposition chamber D 712 via a gate (not shown). Additionally its practical arrangement is similar to that of the cleaning preliminary chamber 722 a , thus, it is possible by introducing radicals generated in the cleaning preliminary chamber 722 e into the deposition chamber D 712 to remove conductive materials and the like being internally attached to the deposition chamber D 712 .
- a respective one of the deposition chamber A 706 , the deposition chamber B 708 , the deposition chamber C 710 and deposition chamber D 712 comprises a mechanism for heating the interior of each deposition chamber. Whereby it is possible to remove part of impurities in the deposition chambers.
- cryopumps and dry pumps are employable as the vacuum pumps provided in these deposition chambers, it is desirable that the cryopumps and dry pumps be used in this embodiment.
- the deposition chamber A 706 , the deposition chamber B 708 , the deposition chamber C 710 and deposition chamber D 712 are reduced in pressure by the vacuum pumps. It is desirable that the finally reached degree of vacuum at this time be greater than or equal to 10 ⁇ 6 Pa.
- a leakage amount within a deposition chamber must be less than or equal to 4.1 ⁇ 10 ⁇ 7 Pa*m 3 *s ⁇ 1 for 20 hours, when the interior of the deposition chamber is formed of aluminum while letting a surface area of the deposition chamber interior measure 10 m 2 . In order to obtain such vacuum degree, it is effective to minimize by electro-polishing techniques the surface area of the deposition chamber interior.
- numeral 718 denotes a sealing chamber (also known as an enclosing chamber or “glove box”), which is coupled via a gate 700 k to the load chamber 704 .
- a sealing chamber also known as an enclosing chamber or “glove box”
- processing for finally enclosing a luminescent element into a sealed space is performed.
- This processing is for protection of the formed luminescent element against oxygen and water, which employs a means for mechanically enclosing by cover material or alternatively enclosing by using either thermally hardenable resin or ultraviolet ray hardenable resin material.
- cover material used may be glass, ceramics, plastic or metal
- the cover material must have optical transmissivity in cases where light is emitted toward the cover material side.
- cover material and a substrate with the above-stated luminescent element formed thereon are adhered together by use of a seal material such as thermal hardenable resin or ultraviolet-ray hardenable resin or else, thereby forming an air-tight sealed space by letting the resin be hardened through thermal processing or ultraviolet ray irradiation processing. It is also effective to provide in this sealed space a moisture absorbable material, typical example of which is barium oxide.
- a mechanism 719 for irradiation of ultraviolet light to the interior of the sealing chamber 718 (referred to as the “ultraviolet light irradiation mechanism” hereinafter) is provided, which is arranged so that ultraviolet light as emitted from this ultraviolet light irradiation mechanism 719 is used to harden the ultraviolet-ray hardenable resin.
- Attachment of a vacuum pump makes also possible to reduce pressure within the sealing chamber 718 .
- the above sealing process is done mechanically by robot operation, it is possible by performing this process to prevent mixture of oxygen and water because of atmosphere in reduced pressure. Practically it is desired that the concentrations of such oxygen and water be made less than or equal to 0.3 ppm.
- the interior of the seal chamber 718 is pressurized adversely.
- the sealing chamber 718 is purged by a nitride gas or noble gas of high purity and pressurized, thereby the invasion of oxygen or the like from the outside is prevented.
- a delivery chamber (pass box) 720 is coupled to the sealing chamber 718 .
- the delivery chamber 720 is provided with a transfer mechanism B 721 for transferring toward the delivery chamber 720 a substrate which sealing of the luminescent element is completed in the sealing chamber 718 .
- the delivery chamber 720 also can be set in a reduced pressure state by attachment of a vacuum pump thereto.
- This delivery chamber 720 is the facility that prevents the sealing chamber 718 from being exposed directly to the outside air, from which the substrate is removed.
- a member supply chamber (not shown) for supplying members to be used in the sealing chamber.
- insulating films with lamination of chemical compounds including silicon such as silicon nitride or silicon oxide and with lamination of a diamond like carbon (DLC) film containing carbon on these chemical compounds may be formed on a luminescent element after forming the luminescent element.
- diamond-like carbon (DLC) film refers to an amorphous film with a mixture of diamond bonding (sp 3 bond) and graphite bond (Sp 2 bond).
- a deposition chamber may be provided which comprises a chemical vapor deposition (CVD) apparatus for generating a plasma by application of a self bias to thereby form a thin film through plasma discharge decomposition of material gases.
- CVD chemical vapor deposition
- the deposition chamber comprising such chemical vapor deposition (CVD) apparatus
- oxygen O 2
- hydrogen H 2 methane
- NH 3 ammonia
- silane SiH 4
- the CVD apparatus there is employable the one that has electrodes of the parallel flat-plate type with RF power supply of 13.56 MHz.
- a deposition chamber for performing deposition by sputtering methods (also called sputter methods).
- deposition by sputtering is effective in the case of forming the anode after forming organic compound layers on the cathode of a luminescent element.
- a pixel electrode is the cathode.
- the interior of such deposition chamber is set at an atmosphere with oxygen added to argon during deposition whereby the concentration of oxygen in a film thus fabricated is well controlled to enable formation of a low resistance film that is high in optical transmissivity.
- the deposition chamber be shielded by a gate from the transfer chamber in a similar manner to the remaining deposition chambers.
- a mechanism may be provided which is operable to control the temperature of such substrate deposited. Additionally it is desirable that the substrate deposited be kept at temperature ranging from 20 to 150° C. Further, although a dry pump, mechanical booster pump, turbo molecular pump (magnetic floatation type) or cryopump is useable as a vacuum pump to be provided in the deposition chamber, the turbo molecular pump (the magnetic flotation type) and dry pump are preferably employed in this embodiment.
- the use of the deposition apparatus shown in FIGS. 7A and 7B makes it possible to prevent exposure of a luminescent element to the outside air until the luminescent element is completely enclosed in an air-tight sealed space, which in turn enables successful manufacture of a luminescent device with high reliability.
- FIGS. 8A and 8B which is different in substrate transfer method and structure from the deposition apparatus of the inline type as has been indicated in the embodiment 1.
- FIGS. 8A and 8B a substrate 804 as loaded into a load chamber 800 is transported toward a first alignment unit 801 which is coupled thereto via a gate (not shown). Note that the substrate 804 is subjected to alignment by the method discussed in FIGS. 4A through 4E and then fixed to a holder 802 along with a metal mask 803 .
- the substrate 804 is transferred to a first deposition unit 805 together with the holder 802 .
- the first alignment unit 801 and the first deposition unit 805 are coupled together via no gates and have the same space.
- a rail 812 is provided as a means for enabling free movement between the first alignment unit 801 and the first deposition unit 805 , wherein each processing is to be done while the holder 802 is moving along this rail. Additionally the processing position during alignment and deposition is controlled by a control mechanism owned by the holder 802 .
- first deposition unit 805 different organic compounds is deposited by vacuum evaporation from a plurality of evaporation sources 806 furnished with the organic compounds respectively to thereby form a first organic compound layer. Note that this movement means will also be used in the case of transfer toward a second alignment unit 807 and a second deposition unit 808 for fabrication of a second organic compound layer in a similar way to that discussed above.
- the third deposition unit 810 is coupled via a gate (not shown) to an unload chamber 811 , thus enabling unloading of a substrate with deposition completed.
- a cleaning preliminary chamber 813 may be provided for cleaning of the interior of each deposition chamber and metal masks.
- the conductive film may be an Al—Li alloy film (alloy film of aluminum and lithium) or alternatively a film obtained by co-vacuum evaporation of both aluminum and an element belonging to either the group I or group II of the periodic table at a time, in the case of forming the anode, there may be used indium oxide, tin oxide, zinc oxide, or an alloys of them (such as ITO).
- FIG. 9 is a diagram showing a cross-sectional view of an active matrix type luminescent device. Note that although thin film transistors (referred to as “TFTs” hereinafter) are employed as active elements, these are replaceable by MOS transistors.
- TFTs thin film transistors
- top gate type TFTs (practically planar type TFTs) will be exemplarily indicated as the TFTs
- bottom gate type TFTs typically, inverse stagger type TFTs
- numeral 901 denotes a substrate, here, which permits transmission of visible light rays. Practically, a glass substrate, a quartz substrate, a crystallized glass substrate or plastic substrate (including a plastic film) are useable. Note that the substrate 901 includes an insulating film provided on the surface thereof.
- a pixel portion 911 and a drive circuit 912 are provided on the substrate 901 .
- the pixel portion 911 will first be explained below.
- the pixel portion 911 is a region that performs image displaying.
- a plurality of pixels are present on the substrate, each of which is provided with a TFT 902 for control of a current flowing in a luminescent element (referred to hereinafter as current controlling TFT), a pixel electrode (anode) 903 , an organic compound layer 904 and a cathode 905 .
- current controlling TFT a current flowing in a luminescent element
- anode anode
- organic compound layer 904 an organic compound layer 904
- cathode 905 a cathode 905
- numeral 913 denotes a TFT for controlling a voltage applied to the gate of the current controlling TFT (referred to as switching TFT hereinafter).
- the current controlling TFT 902 is a p-channel type TFT. although it may alternatively be an n-channel TFT, the use of p-channel TFT makes it possible to suppress consumption of electrical power in case the current controlling TFT is connected to the anode of the luminescent element as shown in FIG. 9. Note however that the switching TFT 913 may be either n-channel TFT or p-channel TFT.
- drain of the current controlling TFT 902 is electrically connected with the pixel electrode 903 .
- the pixel electrode 903 since the pixel electrode 903 is used a conductive material with its work function within a range of 4.5 to 5.5 eV, the pixel electrode 903 functions as the anode of the luminescent element.
- the pixel electrode 903 may typically be made of indium oxide, tin oxide, zinc oxide, or compounds thereof (such as ITO).
- the organic compound layer 904 is provided on the pixel electrode 903 .
- the cathode 905 is provided on the organic compound layer 904 . It is desirable that the cathode 905 be made of a conductive material with its work function ranging from 2.5 to 3.5 eV.
- the cathode 905 is typically made from a conductive film containing alkaline metal elements or alkali rare metal elements, a conductive film containing aluminum, and one that aluminum or silver is laminated on the above conductive films.
- the luminescent element 914 comprising the pixel electrode 903 , the organic compound layer 904 , and cathode 905 is covered with a protective film 906 .
- This protective film 906 is provided for protection of the luminescent element 914 against oxygen and water.
- the protective film 906 is made of material such as silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide or carbon (typically, diamond like carbon).
- the drive circuit 912 is the region that controls the timing of signals (gate signal and data signal) being sent to the pixel portion 911 , which is provided with a shift register, a buffer, a latch, an analog switch (transfer gate), or a level shifter.
- a CMOS circuit is shown which is made up of an n-channel TFT 907 and p-channel TFT 908 for use as a basic unit of these circuits.
- the circuit structure of the shift register, the buffer, the latch, the analog switch transfer gate) or the level shifter may be designed in a known way. Additionally although in FIG. 9 the pixel portion 911 and the drive circuit 912 are provided on the same substrate, it is also possible to electrically connect IC and LSI without providing the drive circuit 912 .
- the pixel electrode (anode) 903 is electrically connected to the current controlling TFT 902 , this may be modified into a structure with the cathode connected to the current controlling TFT.
- the pixel electrode 903 may be made of the same material as that of the cathode 905 while letting the cathode be made of similar material to that of the pixel electrode (anode) 903 .
- the current controlling TFT be an n-channel TFT.
- a shape with an cave consisting essentially of a wiring line 909 and a separation portion 910 is provided.
- the eave structure made of the wiring line 909 and the separation portion 910 shown in FIG. 9 is manufacturable by a method having the steps of laminating a metal constituting the wiring line 909 and a material (e.g. metal nitrides) that forms the separation portion 910 and has a lower etch rate than the metal and then of etching the same.
- a material e.g. metal nitrides
- the cathode 905 on a pixel is formed into a stripe shape (in a similar manner to that of the cathode of a passive matrix).
- FIGS. 10A and 10B an appearance of the active matrix type luminescent device of FIG. 9 is shown in FIGS. 10A and 10B. Note here that an upper plan view is shown in FIG. 10A whereas a sectional view taken along line A-A′ of FIG. 10A is shown in FIG. 10B. Additionally the reference numerals used in FIG. 9 are also used here.
- Numeral 1001 indicated by dotted lines denotes a source side drive circuit; 1002 denotes a pixel portion; 1003 is a gate side drive circuit.
- 1004 indicates a cover material, and 1005 is a seal material, wherein a space 1007 is provided in interior part surrounded by the seal material 1005 .
- numeral 1008 denotes a wiring line which transfers signal as input to the source side drive circuit 1001 and gate side drive circuit 1003 , which receives a video signal and a clock signal from a flexible printed circuit (FPC) 1009 for use as an external input terminal.
- FPC flexible printed circuit
- PWB printed wiring board
- the luminescent device of the subject patent application includes an IC-mounted luminescent module as well as a luminescent module with either the FPC or the PWB attached onto a luminescent panel.
- the pixel portion 1002 and the gate side drive circuit 1003 are formed at upper part of the substrate 901 , wherein the pixel portion 1002 is formed of a plurality of pixels each including the current controlling TFT 902 and the pixel electrode 903 electrically connected to the drain of the current controlling TFT. Additionally the gate side drive circuit 1003 is formed using a CMOS circuit with a combination of the n-channel TFT 907 and the p-channel TFT 908 .
- the pixel electrode 903 functions as the anode of a luminescent element.
- an interlayer insulating film 1006 is formed at the opposite ends of the pixel electrode 903 , and the organic compound layer 904 and the cathode 905 of the luminescent element are formed on the pixel electrode 903 .
- the cathode 905 also serves as a common wiring line for a plurality of pixels and is electrically connected via the connection lead 1008 with the FPC 1009 . Further all the elements involved in the pixel portion 1002 and the gate side drive circuit 1003 are covered with the protective film 906 .
- the cover material 1004 is adhered by the seal material 1005 .
- a spacer formed of a resin film may be provided in order to retain a distance between the cover material 1004 and the luminescent element.
- an interior of the seal material 1005 becomes a sealed space, in which a inactive gas such as nitrogen or argon or else is filled.
- a moisture absorption material such as barium oxide.
- the luminescent element 914 formed on the substrate is sealed by using the cover material 1004 and the seal material 1005 and thus it is possible to completely shield it from the outside and prevent invasion of material which accelerates degradation of organic compound layers due to oxidation such as water and oxygen. Thus it is possible to obtain the luminescent device with high reliability.
- FIG. 15 Another luminescent device different in structure from the one discussed in FIG. 9 will be explained with reference to FIG. 15. Arrangements of a switching TFT 1513 and a current controlling TFT 1502 in a pixel portion 1511 and arrangements of a p-channel TFT 1508 and an n-channel TFT 1507 in a driver circuit 1512 are similar to those in FIG. 9. A method of forming a luminescent element 1514 comprising an anode 1503 , an organic compound layer 1504 , and a cathode 1505 is different from that shown in FIG. 9.
- the luminescent device in this embodiment is capable of deposition using the deposition apparatus explained in the embodiments 1 to 3.
- FIG. 1101 denotes a glass substrate whereas 1102 denotes an anode formed of a transparent conductive film.
- a chemical compound comprising indium oxide and zinc oxide is formed by vacuum evaporation as the transparent conductive film. Note that although not shown in FIG. 11, a plurality of anodes are laid out in a direction parallel to the surface of drawing paper sheet.
- cathode partition walls ( 1103 a , 1103 b ) are formed so that these intersect the anodes 1102 laid out into a stripe shape.
- the cathode partition walls ( 1103 a , 1103 b ) are formed in a vertical direction to the surface of the drawing sheet.
- an organic compound layer 1104 is formed.
- the organic compound layer 1104 thus formed here preferably has a plurality of function regions by combination a plurality of organic compounds each of which has function of the hole injectability, hole transportability, luminescent ability, blocking ability, electron transportability or electron injectability.
- a mixed region is formed between adjacent function regions. Additionally the mixed region is formed by using the method indicated in the embodiments stated supra.
- these organic compound layers 1104 are formed along grooves defined by the cathode partition walls ( 1103 a , 1103 b ) and thus are laid out into a stripe shape in the vertical direction to the surface of the drawing sheet.
- a plurality of cathodes 1105 are laid out into a stripe shape in such a manner that these cross the anodes 1102 with the vertical direction to the surface of the drawing sheet becoming the longitudinal direction thereof.
- the cathodes 1105 are made of MgAg and fabricated by vacuum evaporation.
- the cathodes 1105 are designed so that a wiring lines are extended to reach portions to which an FPC is attached, thereby enabling application of a given voltage.
- a silicon nitride film is provided as a protective film 1106 .
- a luminescent element 1111 is formed on the substrate 1101 .
- lower side electrodes are the anodes 1102 with optical transmittance so that light produced at an organic compound layer emits onto a lower surface (substrate 1101 side).
- the structure of the luminescent element 1111 is reversed to thereby let the lower side electrodes be cathodes with optical shieldability. In such case, light produced at the organic compound layer 1104 is emitted to an upper surface (opposite side to substrate 1101 ).
- a ceramics substrate for use as a cover material 1107 .
- the ceramics substrate is used due to its superiority of light shielding performance, obviously, in case the structure that the luminescent element 1111 is reversed in the way described previously, a substrate made of plastic or glass may be used in view of the fact that the cover material 1107 is better in light transmittance.
- the cover material 1107 thus prepared is then adhered by a seating material 1109 made of ultraviolet ray hardenable resin.
- a seating material 1109 made of ultraviolet ray hardenable resin.
- an interior 1108 of the seal material 1109 becomes an air-tight closed space, which is filled with an inactive gas such as nitrogen or argon.
- an inactive gas such as nitrogen or argon.
- an anisotropic conductive film (FPC) 1110 thus completing the passive type luminescent device.
- the luminescent device as indicated in this embodiment is manufacturable by use of any one of the deposition apparatuses indicated in the embodiments 1 to 3.
- Wide viewing angle is important particularly for portable information terminals because their screens are often slanted when they are looked at. Therefore it is preferable for portable information terminals to employ the luminescent device using the luminescent element. Specific examples of these electric appliance are shown in FIGS. 12A to 12 H.
- FIG. 12A shows a display device, which is composed of a case 2001 , a support base 2002 , a display unit 2003 , speaker units 2004 , a video input terminal 2005 , etc.
- the luminescent device manufactured in accordance with the present invention can be applied to the display unit 2003 . Since the luminescent device having the luminescent element is self-luminous, the device does not need back light and can make a thinner display unit than liquid crystal display devices.
- the display device refers to all display devices for displaying information, including ones for personal computers, for TV broadcasting reception, and for advertisement.
- FIG. 12C shows a notebook personal computer, which is composed of a main body 2201 , a case 2202 , a display unit 2203 , a keyboard 2204 , an external connection port 2205 , a pointing mouse 2206 , etc.
- the luminescent device manufactured in accordance with the present invention can be applied to the display unit 2203 .
- FIG. 12D shows a mobile computer, which is composed of a main body 2301 , a display unit 2302 , a switch 2303 , operation keys 2304 , an infrared port 2305 , etc.
- the luminescent device manufactured in accordance with the present invention can be applied to the display unit 2302 .
- FIG. 12E shows a portable image reproducing device equipped with a recording medium (a DVD player, to be specific).
- the device is composed of a main body 2401 .
- the display unit A 2403 mainly displays image information whereas the display unit B 2404 mainly displays text information.
- the luminescent device manufactured in accordance with the present invention can be applied to the display units A 2403 and B 2404 .
- the image reproducing device equipped with a recording medium also includes home-video game machines.
- FIG. 12F shows a goggle type display (head mounted display), which is composed of a main body 2501 , display units 2502 , and arm units 2503 .
- the luminescent device manufactured in accordance with the present invention can be applied to the display units 2502 .
- FIG. 12G shows a video camera, which is composed of a main body 2601 , a display unit 2602 , a case 2603 , an external connection port 2604 , a remote control receiving unit 2605 , an image receiving unit 2606 , a battery 2607 , an audio input unit 2608 , operation keys 2609 , eye piece portion 2610 etc.
- the luminescent device manufactured in accordance with the present invention can be applied to the display unit 2602 .
- FIG. 12H shows a cellular phone, which is composed of a main body 2701 , a case 2702 , a display unit 2703 , an audio input unit 2704 , an audio output unit 2705 , operation keys 2706 , an external connection port 2707 , an antenna 2708 , etc.
- the luminescent device manufactured in accordance with the present invention can be applied to the display unit 2703 . If the display unit 2703 displays white letters on black background, the cellular phone consumes less power.
- the luminescent device can be used in front or rear projectors by enlarging light that contains outputted image information through a lens or the like and projecting the light.
- luminescent portions consume power and therefore it is preferable to display information in a manner that requires less luminescent portions.
- the luminescent device in display units of portable information terminals, particularly cellular phones and audio reproducing devices that mainly display text information, it is preferable to drive the device such that non luminescent portions form a background and luminescent portions form text information.
- the application range of the luminescent device manufactured by using the deposition device of the present invention is so wide that it is applicable to electric appliances of any field.
- the electric appliances of this embodiment can employ as their display units any luminescent device shown in Embodiments 4 or 5, which is formed by the deposition apparatus shown in Embodiments 1 to 3.
- FIG. 16A A part of the top surface view of a pixel portion 1911 is shown in FIG. 16A.
- the plural pixels 1912 a to 1912 c are formed in the pixel portion 1911 .
- the top surface view shows the state of an insulating layer 1902 formed to cover the edge portion of the pixel electrode formed in a pixel.
- the insulating layer 1902 is formed to cover a source line 1913 , a scanning line 1914 and a current supply line 1915 .
- the insulating layer 1902 also covers the region a ( 1903 ) where connection portion between the pixel electrode and the TFT is formed at the bottom thereof.
- FIG. 16B shows a cross-section view taken along the dot line A-A of the pixel portion 1911 shown in FIG. 16A and the state of forming organic compound layers 1905 a to 19105 c on the pixel electrode 1901 . Further, the organic compound layer composed by same material is formed in the vertical direction to the drawing sheet, and the organic compound layer composed by different material is formed in the horizontal direction to the drawing sheet.
- the organic compound layer (R) 1905 a emitted red light is formed in the pixel (R) 1912 a
- the organic compound layer (G) 1905 b emitted green light is formed in the pixel (G) 1912 b
- the organic compound layer (B) 1905 c emitted blue light is formed in the pixel (B) 1912 c .
- the insulating film 1902 becomes a margin when the organic compound layer is formed. There is no problem if it is on the insulating film 1902 even if the deposition position of the organic compound layer shifts somewhat, and the organic compound layer composed by different material comes in succession on the insulating film 1902 as shown in FIG. 16B.
- FIG. 16C shows a cross-section view taken along the dot line B-B of the pixel portion 1911 shown in FIG. 16A and the state of forming the organic compound layer 1905 on the pixel electrode 1901 same as FIG. 16B.
- the pixel taken along the dot line B-B′ have a structure shown in FIG. 16C. because the organic compound layer (R) 1905 a emitted red light same as the pixel (R) 1912 a is formed in above-mentioned pixel.
- the organic compound layer (R) 1905 a emitted red light, the organic compound layer (G) 1905 b emitted green light and the organic compound layer (B) 1905 c emitted blue light are formed in the pixel portion 1911 .
- the full-color of the luminescent device can be realized.
- fabricating organic compound layers of the luminescent element by use of the deposition apparatus of the present invention makes it possible to continuously form the organic compound layers each having a plurality of function regions, which in turn enables preclusion of contamination of impurities at the interface of adjacent ones of such function regions. Furthermore, it is also possible to form between the function regions a mixed region consisting essentially of the organic compounds that form respective function regions, thereby enabling relaxation of energy barrier between organic layers at the function region interface. This in turn makes it possible to improve the carrier injectability between the organic layers, thus enabling formation of the organic luminescent elements capable of reducing drive voltages while at the same time offering longer lifetime thereof.
Abstract
A deposition apparatus is provided for manufacturing an organic compound layer having a plurality of function regions. The deposition apparatus includes a plurality of evaporation sources within a deposition chamber, for enabling continuous formation of respective function regions comprised of organic compounds and, further, formation of a mixed region at an interface between adjacent ones of the function regions. With the deposition apparatus having such fabrication chamber, it is possible to prevent impurity contamination between the functions regions and further possible to form an organic compound layer with an energy gap relaxed at the interface.
Description
- 1. Field of the invention
- The invention relates to a luminescent device using an organic luminescent element having an anode, a cathode, and a film (referred below to as “organic compound layer”), which includes an organic compound adapted to effect luminescence upon application of an electric field. Specifically, the present invention relates to a manufacturing of a luminescent element which requires a lower drive voltage and has a longer life than luminescent devices of the related art. Further, the luminescent device described in the specification of the present application indicates an image display device or a luminescent device, which use an organic luminescent element as luminescent element. Also, the luminescent device includes all of modules, in which a connector, for example, an anisotropic electroconductive film (FPC:Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is mounted to an organic luminescent element, modules, in which a printed-circuit board is provided on a TAB tape or a tip end of a TCP, or modules, in which an IC (integrated circuit) is directly mounted on an organic luminescent element in the COG (Chip On Glass) system.
- 2. Description of the Related Art
- An organic luminescent element is one adapted to effect luminescence upon application of an electric field. A mechanism for luminescence has been said to reside in that an organic compound layer is interposed between electrodes, upon application of voltage thereto electrons filled from a cathode and holes filled from an anode recombine together at a center of luminescence in the organic compound layer to form molecule excitons, and the molecule excitons discharge energy to produce luminescence when returned to the base state.
- In addition, kinds of molecule excitons formed by the organic compound can include a singlet excited state and a triplet excited state, while the specification of the present invention contains the case where either of the excited states contributes to luminescence.
- In such organic luminescent element, an organic compound layer is normally formed in a thin film below 1 μm. Also, since the organic luminescent element is a self-luminescent type one, in which the organic compound layer itself emits light, a backlight used in a conventional liquid crystal display is not necessary. Accordingly, the organic luminescent element can be very advantageously formed to be thin and lightweight.
- Also, with, for example, an organic compound layer of about 100 to 200 nm in thickness, a time period having elapsed from filling of a carrier to recombination thereof is in the order of several tens of nanosecond taking account of the extent of movement of the carrier in the organic compound layer, and luminescence is achieved in the order of less than one micro second even when the procedure from the recombination of the carrier to luminescence is included. Accordingly, one of the features is that the speed of response is very large.
- Further, since the organic luminescent element is a carrier-filling type luminescent element, it can be driven by DC voltage, and is hard to generate noise. With respect to drive voltage, an adequate luminance of 100 cd/m2 is achieved at 5.5 V by first making the thickness of an organic compound layer a uniform, super-thin film of around 100 nm, selecting an electrode material, which reduces a carrier filling barrier relative to the organic compound layer, and further introducing a single hetero structure (double structure) (Literature 1: C. W. Tang and S. A. VanSlyke, “Organic electroluminescent diodes”, Applied Physics Letters, vol. 51, No. 12, 913-915 (1987)).
- Owing to such performances as thin and lightweight, high-speed responsibility, DC low voltage drive, and the like, organic luminescent elements have been given attention as next-generation flat panel display elements. Also, since organic luminescent elements are of self-luminescent type and large in angle of visibility, they are comparatively favorable in visibility and believed to be effective as elements used for displays in portable equipments.
- Hereupon, in the constitution of an organic luminescent element described in
Literature 1, a carrier filling barrier is made small by using as a cathode a relatively 30 stable Mg:Ag alloy of low work function to enhance an electron injecting quality. This makes it possible to fill a large amount of carrier into the organic compound layer. - Further, the recombination efficiency of the carrier is improved by leaps and bounds by application of a single hetero structure, in which a hole transporting layer composed of a diamine compound and an electron transporting luminescent layer composed of tris (8-quinolinolato) aluminium (hereinafter written as “Alq3”) are laminated as an organic compound layer, which is explained below.
- In the case of, for example, an organic luminescent element having only a single Alq3 layer, a major part of electrons filled from a cathode reaches an anode without recombining with holes, making the luminescent efficiency very low, since Alq3 is of electron transporting quality. That is, in order to have the single-layered organic luminescent element efficiently emitting light (or driving at low voltage), it is necessary to use a material (referred below to as “bipolar material”) capable of carrying both electrons and holes in well-balanced manner, and Alq3 does not meet such requirement.
- However, application of the single hetero structure described in
Literature 1 causes electrons filled from a cathode to be blocked by an interface between the hole transporting layer and the electron transporting luminescent layer to be enclosed in the electron transporting luminescent layer. Accordingly, the carrier is efficiently recombined in the electron transporting luminescent layer to provide for efficient luminescence. - When the concept of such carrier blocking function is developed, it becomes possible to control a carrier recombining region. As an example, there is a report, according to which success is achieved in enclosing holes in a hole transporting layer and making the hole transporting layer luminescent by inserting a layer (hole blocking layer), which is capable of blocking holes, between the hole transporting layer and an electron transporting layer (Literature 2: Yasunori KIJIMA, Nobutoshi ASAI and Shin-ichiro TAMURA, “A Blue Organic Luminescent Diode”, Japanese Journal of Applied Physics, Vol. 38, 5274-5277 (1999)).
- Also, it can be said that the organic luminescent element described in
Literature 1 is based on, so to speak, that thought of functional separation, according to which carrying of holes is performed by the hole transporting layer and carrying and luminescence of electrons are performed by the electron transporting luminescent layer. Such concept of functional separation has further grown to a concept of double heterostructure (three-layered structure), according to which a luminescent layer is inserted between the hole transporting layer and the electron transporting layer (Literature 3: Chihaya ADACHI, Shizuo TOKITO, Tetsuo TSUTSUI and Shogo SAITO, “Electroluminescence in Organic Films with Three-Layered Structure”, Japanese Journal of Applied Physics, Vol. 27, No. 2, L269-L271 (1988)). - Such functional separation has an advantage in that the functional separation makes it unnecessary for a kind of organic material to have a variety of functions (luminescence, carrier carrying quality, filling quality of carrier from electrode, and so on) at a time, which provides a wide freedom in molecular design or the like (for example, it is unnecessary to unreasonably search for bipolar materials). That is, a high luminous efficiency can be easily attained by combining materials having a good luminous quality and a carrier carrying quality, respectively.
- Owing to these advantages, the concept of the laminated structure (carrier blocking function or functional separation) itself described in
Literature 1 has been widely utilized till now. - It is also noted that in the fabrication of these luminescent elements, in particular in mass-production processes, a deposition apparatus of the in-line type (multi-chamber scheme) is typically employed in order to prevent contamination of respective materials upon lamination of a hole transport material and a luminescent material, and an electron transport material or the like by vacuum evaporation. Additionally an upper plan view of such deposition apparatus is shown in FIG. 13. In the deposition apparatus shown in FIG. 13, it is possible to perform a vacuum evaporation of a cathode and a three-layer lamination structure (double-heterostructure) of a hole transport layer and a luminescent layer, and an electron transport layer on a substrate having an anode (such as ITO or else), and to perform a sealing processing thereof.
- Firstly, transfer a substrate with the anode into a carry-in chamber. The substrate is transferred through a first transfer chamber toward an ultraviolet ray irradiation chamber, and is then subjected to cleaning treatment on the surface of such anode, by irradiation of ultraviolet rays in a vacuum environment. Note here that in case the anode is made of oxides such as ITO, the anode is oxidized here in a pretreatment chamber.
- Next, a hole transport layer is formed in a
vapor evaporation chamber 1301 while forming luminescent layers (in FIG. 13, three colors of red, green and blue) invacuum evaporation chambers 1302 to 1304, and forming an electron transport layer in avacuum evaporation chamber 1305, and then forming a cathode in avacuum evaporation chamber 1316. Lastly, sealing processing is carried out in a sealing chamber, thereby obtaining a luminescent element from a carry-out chamber. - One feature unique to the deposition apparatus of the inline type is that vacuum evaporation of respective layers are being performed in different
vacuum evaporation chambers 1301 to 1305 respectively. Accordingly, each of thevacuum evaporation chambers 1301 to 1305 may ordinarily be provided with a single evaporation source (note however that in thevacuum evaporation chambers 1302 to 1304, two evaporation sources will possibly be required from time to time for formation of a co-vacuum evaporation layer in the case of fabrication of a luminescent layer by doping pigment thereinto). To be brief, a specific apparatus arrangement is employed, in which materials of respective layers are hardly mixed into each other. - However, being a junction between substances of different kinds (in particular, a junction between insulating materials), the laminated structure described above will necessarily produce an energy barrier at an interface the substances. Since the presence of an energy barrier inhibits movements of a carrier at the interface, the two following problems are caused.
- One of the problems is that it results in a barrier leading to further reduction of drive voltage. Actually, it has been reported with respect to existing organic luminescent elements that an element of a single-layered structure making use of a conjugate polymer is excellent in terms of drive voltage and holds top data (comparison in luminescence from the singlet excited state) in power efficiency (unit:“1m/W”) (Literature 4: Tetsuo Tsutsui “bulletin of organic molecular/bioelectronics” subcommittee of Society of Applied Physics, Vol. 11, No. 1, P. 8 (2000)).
- In addition, the conjugate polymer described in Literature 4 is a bipolar material, and can attain a level equivalent to that of the laminated structure with respect to the recombination efficiency of a carrier. Accordingly, it demonstrates that a single layer structure having less interfaces is actually low in drive voltage provided that a method making use of a bipolar material can make an equivalent recombination efficiency of a carrier without the use of any laminated structure.
- For example, there is a method, in which a material for mitigating an energy barrier is inserted at an interface between an electrode and an organic compound layer to enhance a carrier filling quality to reduce drive voltage (Literature 5: Takeo Wakimoto, Yoshinori Fukuda. Kenichi Nagayama, Akira Yokoi, Hitoshi Nakada, and Masami Tsuchida, “Organic EL Cells Using Alkaline Metal Compounds as Electron Injection Materials”, IEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 44, NO. 8, 1245-1248 (1977)). In Literature 5, the use of Li2O as an electron injecting layer has been successful in reduction of drive voltage.
- However, the carrier transfer between organic materials (e.g., between the hole transport layer and luminescent layer; the interface will hereinafter be called “organic interface”) remains as an unsettled issue and is considered to be an important point in catching up with the low drive voltage provided by the single-layered structure.
- Further, the other problem caused by an energy barrier is believed to be an influence on the service life of organic luminescent elements. That is, movements of a carrier are impeded, and brilliance is lowered due to build-up of charges.
- While any definite theory has not been established with respect to such mechanism of deterioration, there is a report that lowering of brilliance can be suppressed by inserting a hole injecting layer between an anode and a hole transporting layer and employing not DC driving but AC driving of rectangular wave (Literature 6: S. A. VanSlyke, C. H. Chen, and C. W. Tang, “Organic electroluminescent devices with improved stability”, Applied Physics Letters, Vol. 69, No. 15, 2160-2162 (1996)). This can be said to present an experimental evidence that lowering of brilliance can be suppressed by eliminating accumulation of charges due to insertion of a hole injecting layer and AC driving.
- It can be said from the above that on one hand the laminated structure has an advantage in enabling easily enhancing the recombination efficiency of a carrier and enlarging a range of material selection in terms of functional separation and on the other hand formation of many organic interfaces impedes movements of a carrier and has an influence on lowering of drive voltage and brilliance.
- Additionally in the prior art deposition apparatus, lamination of the hole transport material and luminescent layer material, electron transport material or else is done in separate chambers provided with its own evaporation source in order to prevent contamination of respective materials. However, such apparatus is encountered with problems that organic interfaces are clearly separated and when a substrate is driven to move between chambers, impurities such as water and oxygen can be mixed into the organic interface, in the case of forming the above-noted multilayer structure,.
- Hence, the present invention provides deposition apparatuses based on concepts different from the prior used multilayer structures for fabricating an element having functions of a variety of kinds of materials in a similar manner to the function separation of multilayer structures while at the same time relaxing energy barriers present in organic compound layers to thereby enhance the mobility of electrical carriers. Another object of the invention is to provide deposition method employing these deposition apparatuses.
- Regarding the energy barrier relaxation in multilayer structures, it is remarkably seen in the technique for insertion of a carrier injection layer as found in the Document 5. In other words, at the interface of a multilayer structure having a large energy barrier, insertion of a material for relaxing such energy barrier makes it possible to design the energy barrier into the form of a stair step-like shape.
- With such an arrangement, it is possible to increase the injectability of electrical carriers from an electrode and to reduce a drive voltage to a certain degree. However, a problem faced with this approach is that an increase in requisite number of layers would result in an increase in organic interface number. As suggested from Document 4, this is considered to be a cause for the fact that single-layer structures are superior to multilayer structures in holding of the top-class data as to the drive voltage and power efficiency.
- Adversely, overcoming this point makes it possible to catch up the drive voltage/power efficiency of single-layer structure while at the same time maintaining the merits of multilayer structures (enabling combination of a variety of materials while avoiding the need for any complicated molecular design).
- Then in the present invention, in the case of forming an
organic compound layer 103 consisting a plurality of function regions between ananode 101 and acathode 102 in a luminescent element as shown in FIGS. 1A and 1B. not the prior art multilayer structure with the presence of distinct interfaces (FIG. 1A) but a structure (FIG. 1B) having amixed region 106 comprising both a material constituting afirst function region 104 and a material constituting asecond function region 105 between thefirst function region 104 and thesecond function region 105 is formed. - It is considered that applying the structure shown in FIG. 1B causes any energy barrier existing between function regions to decrease when compared to the prior art structure shown in FIG. 1A, resulting in an improvement in carrier injectability. Practically, while an energy band diagram in the structure of FIG. 1A is as shown in FIG. 1C, in the case of forming a structure with a mixed region between function regions as shown in FIG. 1B, its energy band diagram becomes as shown in FIG. 1D. To be brief, the energy barrier between function regions is relaxed by formation of such mixed region therebetween. Thus, it becomes possible to prevent drive voltage drop-down and luminance reduction.
- From the foregoing, with deposition apparatus of the present invention, in the manufacture of a luminescent element which at least includes a region (first function region) which a first organic compound can express function and a region (second function region) which a second organic compound different from the substance consisting the first function region can express function and also of a luminescent device having the luminescent element, a feature unique thereto is that a mixed region comprised of the organic compound constituting the first function region and organic compound constituting the second function region is fabricated between the first function region and the second function region.
- It should be noted that the first organic compound and second organic compound are different in nature from each other while each having its nature as selected from the group consisting of hole injectability for receipt of holes from the anode, hole transportability with hole mobility greater than electron mobility, electron transportability with electron mobility greater than hole mobility, electron injectability for receipt of electrons from the cathode, blocking ability for enabling preclusion of movement of either holes or electrons, and luminescent ability exhibiting luminescence.
- Also note that the organic compound with high hole injectability is preferably made of phthalocyanine-based compound; the organic compound with high hole transportability may be aromatic diamine compound, and, the organic compound with high electron transportability may be a metal complex that contains therein quinoline skeleton, metal complex containing benzoquinoline skeleton or oxadiazole derivative or triazole derivative or phenanthroline derivative. Furthermore, the organic compound exhibiting luminescence may preferably be a metal complex containing therein quinoline skeleton with stabilized light emission, metal complex containing benzooxazole skeleton, or metal complex containing benzothiazole skeleton.
- Some combinations of the above-stated first function region and the second function region are shown in Table 1 presented below. Combinations A to E may be employable solely (e.g. only “A”) or alternatively some of them are introduced together in a composite fashion (e.g. both “A” and “B”).
TABLE 1 Combination 1st Function Region 2nd Function Region A Hole Injectability Hole Transportability B Electron Injectability Electron Transportability C Hole Transportability Luminescent ability D Electron Transportability Luminescent ability E Electron Transportability Blocking Ability - Additionally in the case of introduction with composite use of the combinations C and D (that is, when introducing a mixed region at the both interfaces of a function region with luminescent ability), by preventing diffusion of molecular excitons formed in the luminescent region, it is possible to further increase the luminescent efficiency. Thus it will be preferable that the excitation energy of such luminescent region is lower than the excitation energy of the hole region and the excitation energy of electron transport region. In this case, since luminescent material poor in carrier transportability is also utilizable as the luminescent region, there is an advantage that the range of selecting material expands accordingly. Note here that the term “excitation energy” used in this specification is to be understood to mean an energy difference between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO).
- More preferably, it is designed so that the luminescent region is comprised of both host material and luminescent material (dopant) low in excitation energy than the host material and designed such that the excitation energy of such dopant is lower than the excitation energy of hole transport region and the excitation energy of electron transport layer. With such an arrangement, it is possible to permit the dopant to produce light efficiently while at the same time preventing diffusion of the dopant's molecular excitons. In addition, if the dopant is made of certain material of the carrier trap type then it is also possible to increase the recombination efficiency of carriers.
- Hereupon, in view of the luminescent efficiency, organic luminescent elements capable of converting energy (referred below to as “triplet excited energy”), which is discharged when returned to a base state from a triplet excited state, into luminance, have been successively presented, and notice has been taken of their luminous efficiency (Literature 7: D. F. O'Brien, M. A. Baldo, M. E. Thompson and S. R. Forrest, “Improved energy transfer in electrophosphorescent devices”, Applied Physics Letters, Vol. 74, No. 3, 442-444 (1999)), (Literature 8: Tetsuo TSUTSUI, Moon-Jae YANG, Masayuki YAHIRO, Kenji NAKAMURA, Teruichi WATANABE, Taishi TSUJI, Yoshinori FUKUDA, Takeo WAKIMOTO and Satoshi MIYAGUCHI, “High Quantum Efficiency in Organic Luminescent devices with Iridium-Complex as a Triplet Emissive Center”, Japanese Journal of Applied Physics, Vol. 38, L1502-L1504 (1999)).
- A metal complex, of which central metal is platinum, is used in Literature7, and a metal complex, of which central metal is iridium, is used in Literature 8. These organic luminescent elements capable of converting triplet excited energy into luminance (referred below to as “triplet luminescent diode”) can attain higher intensity luminance and higher luminous efficiency than in the related art.
- However, Literature 8 has presented an example, in which half-life of luminance is about 170 hours in the case where the initial luminance is set to 500 cd/m2, thus causing a problem in service life of an element. Hereupon, application of the invention to triplet light emitting diodes can provide a highly functional luminescent element, which is long in service life in addition to high intensity luminance and high luminous efficiency based on luminance from a triplet excited state.
- Consequently the case of adding a material capable of converting the triplet excitation energy to light emission into the mixed region as a dopant will also be included in the present invention. Additionally in the formation of such mixed region, it is permissible that the mixed region has a concentration gradient.
- With the deposition apparatus of the present invention, the feature lies in that a plurality of function regions are deposited within the same deposition chamber having a plurality of evaporation sources to thereby form a luminescent element having the mixed region stated supra.
- An explanation will now be given of a
deposition chamber 210 as used in the deposition apparatus of this invention with reference to FIG. 2A. As shown in FIG. 2A. ametal mask 202 being fixed to aholder 201 is furnished beneath asubstrate 200, with anevaporation source 203 a to 203 c being provided further beneath it. Evaporation sources 203 (203 a to 203 c) comprises organic compounds 204 (204 a to 204 c) for fabrication of organic compound layer, material chambers 205 (205 a to 205 c) for preparing the organic compounds therein, and shutters 206 (206 a to 206 c). Note here that in the deposition apparatus of this invention, it is recommendable that either the evaporation source or a substrate to be subjected to vacuum evaporation be movably (rotatably) arranged to ensure that film is fabricated uniformly. - Meanwhile, the material chambers205 (205 a to 205 c) are made of conductive metal material and have a structure shown in FIG. 17. Note that the organic compounds 204 (204 a to 204 c) are vaporized and then deposited onto a surface of the
substrate 200 upon heat up of the internal organic compounds 204 (204 a to 204 c) due to resistance occurring when a voltage is applied to the material chambers 205 (205 a to 205 c). Also note that the term “surface of thesubstrate 200” is to be understood to involve the substrate and more than one thin-film as formed over this substrate, here, an anode is formed on the substrate. - In addition the shutters206 (206 a to 206 c) control vacuum evaporation of the vaporized organic compounds 204 (204 a to 204 c). In brief, when the shutters are opened, it is possible to deposit the vaporized organic compounds 204 (204 a to 204 c) due to heat application by vacuum evaporation.
- Additionally it will be desirable that the organic compounds204 (204 a to 204 c) be pre-vaporizable by heat application prior to the vacuum evaporation process for enabling effectuation of any vacuum evaporation immediately after the shutters 2()6 (206 a to 206 c) are opened during vacuum evaporation, thus shortening a time period required for deposition.
- In addition, in the deposition apparatus embodying the invention, an organic compound layer having a plurality of function regions is formed within a single deposition chamber,
evaporation sources 203 a to 203 c are provided. Organic compounds vaporized atrespective evaporation sources 203 a to 203 c behave to upwardly and then pass through openings (not shown) that are defined in themetal mask 202 to be deposited on thesubstrate 200. - Initially a first
organic compound 204 a furnished in thefirst material chamber 205 a is subject to vacuum evaporation. Note here that the firstorganic compound 204 a is vaporized in advance by resistive heat up and thus dispersed in the direction ofsubstrate 200 upon opening of theshutter 206 a during vacuum evaporation. Whereby, it is possible to form afirst function region 210 shown in FIG. 2B. - And, while letting the first
organic compound 204 a kept deposited, open anothershutter 206 b for execution of vacuum evaporation of a secondorganic compound 204 b furnished in thesecond material chamber 205 b. Note that the second organic compound also is pre-vaporized by resistive heat up and thus dispersed in the direction ofsubstrate 200 upon opening of theshutter 206 b during vacuum evaporation. Here, it is possible to form a first mixed region 211 which consists essentially of the firstorganic compound 204 a and the secondorganic compound 204 b. - And, after a while, close only the
shutter 206 a for vacuum evaporation of the secondorganic compound 204 b. Thus it is possible to form asecond function region 212. - It should be noted that although one specific method for forming the mixed region through simultaneous vacuum evaporation of two kinds of organic compounds is shown here, it is also possible to form the mixed region between the first function region and second function region by depositing the first organic compound and, thereafter. depositing the second organic compound in the vacuum evaporation environment of the first organic compound.
- Next, while letting the second
organic compound 204 b kept deposited, open ashutter 206 c for execution of vacuum evaporation of a thirdorganic compound 204 c as has been furnished in thethird material chamber 205 c. Note that the thirdorganic compound 204 c is also pre-vaporized by resistive heat up and thus dispersed in the direction ofsubstrate 200 upon opening of theshutter 206 c during vacuum evaporation. Here, it is possible to form a secondmixed region 213 which consists essentially of the secondorganic compound 204 b and the thirdorganic compound 204 c. - And, after a while close only the
shutter 206 b for vacuum evaporation of the thirdorganic compound 204 c. Thus it is possible to form athird function region 214. - Lastly, a cathode is formed, thereby completing a luminescent element as fabricated by the deposition apparatus of the present invention. Further, regarding other organic compound layers, as shown in FIG. 2C, after forming a
first function region 220 using the firstorganic compound 204 a, form a firstmixed region 221 consisting essentially of the firstorganic compound 204 a and the secondorganic compound 204 b, and further form asecond function region 222 by using the secondorganic compound 204 b. Then, simultaneously perform vacuum evaporation of thirdorganic compound 204 c while lettingshutter 206 c open temporarily during formation of thesecond function region 222, thereby forming a second mixed region 223. - After a while, close the
shutter 206 c to thereby again form thesecond function region 222. Then form a cathode, thus forming a luminescent element. - It must be noted that in view of the fact that with the deposition apparatus of this invention the deposition is performed by use of the plurality of material chambers within the same deposition chamber, a material chamber with the organic material used for deposition may be designed to move at an optimal location beneath the substrate during deposition process in order to improve the deposition property or, alternatively, the substrate is modified to have a function of moving at an optimal position overlying the material chamber for the same purpose.
- Furthermore, the deposition chamber of this invention is provided with an attachment-preventing
shield 207 for preventing attachment of organic compounds to the inner wall of such deposition chamber during vacuum evaporation. Providing this attachment-preventingshield 207 makes it possible to deposit those organic compound components that have failed to be deposited on the substrate. Around the attachment-preventingshield 207, aheater 208 is provided in contact therewith, wherein the use of thisheater 208 enables the entirety of such attachment-preventingshield 207 to be heated. Additionally, heating the attachment-preventingshield 207 makes it possible to vaporize the organic compounds attached to theshield 207. This in turn makes it possible to achieve successful cleaning of the interior of deposition chamber. - As the deposition apparatus of the invention capable of fabricating the above-discussed organic compound layers enables formation of an organic compound layer having a plurality of function regions within the same deposition chamber, it is possible to form a mixed region at the interface between function regions without letting the function region interface be contaminated by impurities. From the foregoing, it is apparent that a luminescent element comprising multiple functions is manufacturable without showing any distinct multilayer structures (that is, without associating any distinct organic interfaces).
- FIGS. 1A through 1D are diagrams for explanation of an element structure as fabricated by a deposition apparatus of the present invention;
- FIG. 2A is a diagram for explanation of a deposition chamber and FIGS. 2B and 2C are diagrams of elements as fabricated by a deposition chamber shown in FIG. 2A;
- FIGS. 3A and 3B are diagrams explaining about a deposition apparatus;
- FIGS. 4A through 4E are diagrams for explanation of a metal mask alignment method;
- FIG. 5 is a diagram explaining on a deposition apparatus;
- FIGS. 6A and 6B are diagrams explaining on a deposition chamber;
- FIGS. 7A and 7B are diagrams explaining on a deposition apparatus;
- FIGS. 8A and 8B are diagrams explaining on a deposition apparatus;
- FIG. 9 is a diagram explaining on a luminescent device;
- FIGS. 10A and 10B are diagrams explaining on a seal structure;
- FIG. 11 is a diagram explaining on a luminescent device;
- FIGS. 12A through 12H are diagrams showing examples of electrical instruments;
- FIG. 13 is a diagram for explanation of one typical prior art:
- FIG. 14 is a diagram explaining on a deposition apparatus; and
- FIG. 15 is a diagram explaining on a luminescent device.
- FIGS. 16A through 16C are diagrams explaining on a pixel portion.
- FIG. 17 is a diagram explaining on material chambers.
- [Embodiment Mode]
- An arrangement of deposition apparatus of the present invention will be explained with reference to FIGS. 3A and 3B. FIG. 3A is a diagram showing an upper plan view of the deposition apparatus, and FIG. 3B shows a cross-sectional view thereof. Note here that common components will be designated by common reference numerals. Also there is shown an example which is arranged so that three kinds of organic compound layers (red, green, blue) are formed in each deposition chamber of a deposition apparatus of the inline scheme having three deposition chambers.
- In FIG. 3A, reference numeral “300” denotes a loading chamber, wherein a substrate prepared in this load chamber is transferred toward a
first alignment chamber 301. Note that in thefirst alignment chamber 301, alignment of ametal mask 303 fixed to aholder 302 in advance is done with theholder 302, thereby asubstrate 304 of pre-vacuum evaporation is formed on the alignment-finishedmetal mask 303, wherein one electrode (here, anode) comprising a luminescent element is formed on thesubstrate 304. Whereby, thesubstrate 304 andmetal mask 303 are made integral together to be transferred toward afirst deposition chamber 305. - An explanation will now be given of a positional relationship of the
holder 302 for fixation of themetal mask 303 andsubstrate 304 with reference to FIGS. 4A through 4E. Note that in these drawings, components identical to those of FIGS. 3A and 3B will be denoted by the same reference numerals. - A sectional structure is shown in FIG. 4A. The
holder 302 shown herein is generally constituted from amask holder 401, ashaft 402, asubstrate holder 403,control mechanism 404 andauxiliary pins 405. Additionally themetal mask 303 is fixed in a way aligned with aprojection 406 on themask holder 401, with thesubstrate 304 mounted on themetal mask 303. Additionally thesubstrate 304 on themetal mask 303 is fixed by the auxiliary pins 405. - An upper plan view in a
region 407 of FIG. 4A is shown in FIG. 4B. Additionally thesubstrate 304 is fixed by thesubstrate holder 403 shown in FIG. 4A and FIG. 4B. Further, a sectional view as taken along line B-B′ of FIG. 4B is shown in FIG. 4C. Assuming that the position of themetal mask 303 shown in FIG. 4C is at the time of deposition, a position of themetal mask 303 shown in FIG. 4D with theshaft 402 moved in Z-axis direction is during alignment process. - At the process step of FIG. 4D, the
shaft 402 is movable in any one of X-axis and Y-axis, and Z-axis directions, further, movement of gradient (0) of an X-Y plane with respect to the Z-axis is also possible. Additionally, thecontrol mechanism 404 outputs a movement information from both a position information obtained from a charge-coupled device (CCD) camera and a position information input therein in advance, thereby the position of the mask holder can be identical with a specified position through theshaft 402 coupled to thecontrol mechanism 404. - In addition, an enlarged view of the
metal mask 303 in aregion 408 is shown in FIG. 4E. Themetal mask 303 as used herein is structured from a mask a409 and a mask b410 formed using different materials each other. Additionally during vacuum evaporation, organic compounds that have passed through theseopenings 411 will be fabricated on the substrate. Their shapes are contrived to improve the deposition accuracy upon execution of vacuum evaporation using the masks, and are used in such a manner that thesubstrate 304 and the mask b410 are in contact with each other. - When alignment of the
metal mask 303 is completed, let the shaft move in the Z-axis direction causing themetal mask 303 to again move at the position of FIG. 4C and then let themetal mask 303 andsubstrate 304 be fixed together by theauxiliary pins 405, thus making it possible to complete the alignment of themetal mask 303 along with the positioning between themetal mask 303 and thesubstrate 304. - Note that in this embodiment, the openings of the
metal mask 303 may be of a rectangular, elliptical, or linear shape, in addition, these may be designed into a matrix-like layout or delta layout. - The
first deposition chamber 305 in FIG. 3A is provided with a plurality ofevaporation sources 306. Additionally each theevaporation sources 306 consists of a material chamber (not shown) in which organic compounds are prepared and a shutter (not shown) for controlling through open/close operations dispersion of vaporized organic compound in the material chamber toward outside of the material chamber. - In addition, the plurality of
evaporation sources 306 provided in thefirst deposition chamber 305 are provided with organic compounds having different functions for constituting an organic compound layer of a luminescent element. respectively. Note here that the organic compounds as used herein may refer to organic compounds having its nature of hole injectability for receipt of holes from the anode, hole transportability with hole mobility greater than electron mobility, electron transportability with electron mobility greater than hole mobility, electron injectability for receipt of electrons from the cathode, blocking ability for enabling inhibition of movement of either holes or electrons, and luminescent ability exhibiting light emission. - Note here that the organic compound with a high hole injectability may preferably be phthalocyanine-based compound; the organic compound with a high hole transportability is preferably aromatic diamine compound; and, the organic compound with a high electron transportability is preferably a metal complex containing benzoquinoline skeleton, oxadiazole derivative, triazole derivative, or still alternatively phenanthroline derivative. Further, the organic compound exhibiting luminescent ability is preferably a metal complex containing quinoline skeleton, metal complex containing benzooxazole skeleton, or metal complex containing benzothiazole skeleton which emit a steady light.
- In the
first deposition chamber 305, the organic compounds provided in these evaporation sources are deposited by a vacuum evaporation in order, using the method discussed in FIG. 2A, resulting in formation of a first organic compound layer (here, red) having a plurality of function regions and mixed regions. - Next, the
substrate 304 is transported toward asecond alignment chamber 307. In thesecond alignment chamber 307, after oncesubstrate 304 is separated from themetal mask 303, alignment of themetal mask 303 is done in such a manner that it matches a position whereat a second organic compound layer is to be fabricated. And, after completion of the alignment, thesubstrate 304 and themetal mask 303 are overlapped with each other and fixed together. - And, transfer the
substrate 304 toward asecond deposition chamber 308. Similarly thesecond deposition chamber 308 is also provided with a plurality of evaporation sources. In a similar way to thefirst deposition chamber 305. a plurality of organic compounds are deposited by a vacuum evaporation in order, resulting in formation of a second organic compound layer (here, green) having a plurality of function regions and mixed regions. - Further, transfer the
substrate 304 toward athird alignment chamber 309. In thethird alignment chamber 309, after once thesubstrate 304 is separated from themetal mask 303, alignment of themetal mask 303 is done in such a way that it matches a position whereat a third organic compound layer is to be fabricated. And, after completion of the alignment, thesubstrate 304 andmetal mask 303 are overlapped with each other and fixed together. - And, transfer the
substrate 304 to athird deposition chamber 310. Similarly thethird deposition chamber 310 is also provided with a plurality of evaporation sources. In a similar way to that of the other deposition chambers, a plurality of organic compounds are deposited by a vacuum evaporation in order, resulting in formation of a third organic compound layer (here, blue) having a plurality of function regions and mixed regions. - Lastly the
substrate 304 is transferred to an unload chamber 31 1 and then taken outwardly of the deposition apparatus. - Performing in this way the alignment of the
metal mask 303 in the alignment chamber once at a time whenever a different organic compound layer is formed, a plurality of organic compound layers can be formed within the same apparatus. As function regions consisting of a single organic compound layer is deposited in the same deposition chamber in this way, it is possible to avoid impurity contamination between adjacent function regions. Furthermore in this deposition apparatus, since it is possible to form a mixed region between different function regions, it becomes possible manufacture a luminescent element having multiple functions without indicating any distinct multilayer structures. - Additionally although there is shown in this embodiment a deposition apparatus which operates up to the formation of the organic compound layers, the deposition apparatus of the present invention should not be limited only to this structure and may alternatively be modified to have a structure comprising a deposition chamber in which the cathode is formed on an organic compound layer and a processing chamber capable of sealing the luminescent element. Additionally the deposition order of the organic compound layers which emit red, green and blue light should not be limited to the above-stated one.
- Moreover, there may also be provided a means for cleaning the alignment and deposition chambers as indicated in this embodiment mode. Also note that in case such means is provided in the
region 312 of FIG. 3, it is possible to provide a cleaningpreliminary chamber 313 shown in FIG. 14. - In the cleaning
preliminary chamber 313, let radicals generate by decomposition of a reactive gas such as NF3 or CF4 and then introduce them into thesecond alignment chamber 307 to thereby enable cleaning at thesecond alignment chamber 307. Note here that the metal mask can be cleanup by providing used metal mask in thesecond alignment chamber 307 in advance. Also note that introducing the radicals into thesecond deposition chamber 308 also makes it possible to clean up the inside of thesecond deposition chamber 308. Additionally thesecond alignment chamber 307 andsecond deposition chamber 308 are connected with the cleaningpreliminary chamber 313 through gates (not shown) respectively, wherein the gates are designed to open upon introduction of radicals. - [Embodiment 1]
- An explanation will be given of the case where the deposition apparatus of the present invention is the inline scheme, with reference to FIG. 5. In FIG. 5.
reference numeral 501 denotes a load chamber, from which a substrate is transported. Note that the term substrate as used in this embodiment is to be understood to mean the one with either an anode or cathode (anode used in this embodiment) for use as one electrode of a luminescent element being formed thereon. In addition theload chamber 501 comes with agas exhaust system 500 a, wherein thisexhaust system 500 a is constituted including afirst valve 51, a turbomolecular pump 52, asecond valve 53, athird valve 54 and adry pump 55. - Additionally in this embodiment, as the material used for inside of respective processing chambers such as a gate-blocked load chamber, an alignment chamber, a deposition chamber, a sealing chamber and an unloading chamber, a material such as aluminum or stainless steel (SUS) with mirror surfaces through treatment of electro polishing is used on the internal wall planes thereof due to its capability to reduce an adsorption of the impurity such as oxygen and water by making surface area of the inside wall smaller. In addition, internal members made of material such as ceramics or else are employed as the inside material which are treated that pores become extremely less. Note that these materials have surface smoothness with the center average roughness being less than or equal to 30 Å.
- Although the
first valve 51 is a main valve having a gate valve, a butterfly valve that functions also as a conductance valve will alternatively be used. Thesecond valve 53 and thethird valve 54 are fore valves. First, a pressure of theload chamber 501 is roughly reduced by thedry pump 55 with thesecond valve 53 opened, next, a pressure of theload chamber 501 is reduced to a high degree of vacuum by the turbomolecular pump 52 with thefirst valve 51 andthird valve 54 open. Note that the turbo molecular pump may be replaced with a mechanical booster pump; alternatively, the turbo molecular pump is usable after increased the vacuum degree by the mechanical booster pump. - Next, the one indicated by numeral502 is an alignment chamber. Here, alignment of a metal mask and positioning of a substrate on the metal mask are done for deposition at a deposition chamber to which it will next be transferred. This will be called alignment chamber A502. Additionally, the method explained in FIGS. 4A through 4E may be employed in the alignment method here. Additionally the alignment chamber A502 comprises a
gas exhaust system 500 b and is shut and shielded from theload chamber 501 by a gate, not shown. - Further, the alignment chamber A502 is provided with a cleaning
preliminary chamber 513 a for producing therein radicals by decomposition of a reactive gas such as NF3 or CF4 or else and then introducing this into the alignment chamber A502, to thereby enable of cleanup at the alignment chamber A502. Note that the used metal mask can be cleanup by providing the metal mask in the alignment chamber A502 in advance. - Next, numeral503 denotes a deposition chamber for fabrication of a first organic compound layer by vacuum evaporation methods, which will be called deposition chamber A503 hereinafter. The deposition chamber A503 comprises an
exhaust system 500 c. In addition, this is shut and shielded from the alignment chamber A502 by a gate, not shown. - In a similar way to the alignment chamber A502, the deposition chamber A503 is provided with a cleaning
preliminary chamber 513 b. Note here that the interior of the deposition chamber A503 can be cleanup by introducing into the deposition chamber A503 radicals produced through decomposition of a reactive gas such as NF3 or CF4 or else. - In this embodiment, a deposition chamber that has the structure shown in FIG. 2A is provided as the deposition chamber A503 for fabrication of the first organic compound layer which emits red light. Additionally provided as the evaporation sources are a first evaporation source provided with an organic compound with hole injectability, a second evaporation source provided with an organic compound with hole transportability, a third evaporation source provided with an organic compound with hole transportability for use as a host of organic compound with luminescent ability, a fourth evaporation source provided with an organic compound with luminescent ability, a fifth evaporation source provided with an organic compound with blocking ability, and a sixth evaporation source provided with an organic compound with electron transportability.
- It is also noted that in this embodiment, copper phthalocyanine (abbreviated as “Cu—Pc” hereinafter) is used as the organic compound with hole injectability that provided in the first evaporation source; 4,4′-bis [N-(1-naphthyl)-N-phenyl-amino]-biphenyl (abbreviated as “o-NPD” hereafter) is used as the organic compound with hole transportability being provided in the second evaporation source; 4,4′-dicarbazole-biphenyl (“CBP”) is used as the organic compound which becomes the host provided in the third evaporation source: 2, 3, 7, 8, 12, 13, 17. 18-octaethyl-21H, 23H-porphyrin-platinum (“PtOEP”) is used as the organic compound with luminescent ability provided in the fourth evaporation source; bathocuproin (“BCP”) is used as the organic compound with blocking ability provided in the fifth evaporation source; and, tris (8-quinolinolat) aluminum (“Alq3”) is used as the organic compound with electron transportability provided in the sixth evaporation source.
- It is noted that the organic compound layer comprising regions having the functions of hole injectability, hole transportability, luminescent ability, and electron transportability can be formed over the anode by depositing these organic compound in order through a vacuum evaporation.
- Also note that in this embodiment, a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds consisting of both function regions. To be brief, mixed regions are formed respectively at an interface between the hole injection region and the hole transport region and at an interface between the hole transport region and the electron transport region including a luminescent region.
- Practically, after formed a first function region through deposition of Cu—Pc to a thickness of 15 nm, both Cu—Pc and α-NPD are deposited by a vacuum evaporation at a same time to thereby form a first mixed region with a film thickness of 5 to 10 nm. Then, fabricate a film of α-NPD to a thickness of 40 nm to thereby form a second function region, followed by formation of a second mixed region with a thickness of 5 to 10 nm by simultaneous vacuum evaporation of α-NPD and CBP. Thereafter, fabricate a film of CBP to a thickness of 25 to 40 nm, thus forming a third function region. At the step of forming the third function region, both CBP and PtOEP are deposited at a same time, thereby forming a third mixed region at the entirety or part of the third function region. Note here that the third mixed region has luminescent ability. Further, both CBP and BCP are deposited by simultaneous vacuum evaporation to a film thickness of 5 to 10 nm, thereby forming a fourth mixed region. In addition, a BCP film is fabricated to a thickness of 8 nm, thus forming a fourth function region. Furthermore, BCP and Alq3 are deposited by simultaneous vacuum evaporation to a film thickness of 5 to 10 nm, resulting in formation of a fifth mixed region. Lastly a film of Alq3 is formed to a thickness of 25 nm, thus enabling formation of a fifth function region. With the above process steps, a first organic compound layer is thus formed.
- It should be noted that in the above explanation concerning the first organic compound layer six kinds of organic compounds different in function from one another are provided in six evaporation sources respectively and the organic compound layer is then formed by vacuum evaporation of these organic compounds. The present invention should not be limited only to the above and may use a plurality of organic compounds. Additionally the organic compound provided in a single evaporation source should not always be limited to a single one and may alternatively be multiple ones. For example, in addition to a single kind of material provided in an evaporation source as an organic compound with luminescent ability, another organic compound that serve as a dopant may be provided together. Note that the first organic compound layer has a plurality of functions and prior known materials may be used as these organic compounds composing an organic compound layer which emits the red light.
- It is to be noted that the evaporation sources may be designed so that a microcomputer is used to control the deposition speeds thereof. Additionally, with this arrangement, it is preferable to control the ratio of mixture upon simultaneous fabrication of a plurality of organic compound layers.
- Next, the one indicated by numeral506 is an alignment chamber. Here. alignment of a metal mask and positioning of a substrate on the metal mask are done for deposition at a deposition chamber to which it will next be transferred. This will be called an alignment chamber B506. Additionally, the method explained in FIGS. 4A through 4E may be employed in the alignment method here. Additionally the alignment chamber B506 comprises a
gas exhaust system 500 d and is shut and shielded from the deposition chamber A503 by a gate not shown. It further comprises a cleaningpreliminary chamber 513 c that is shut and shielded from the alignment chamber B506 by a gate not shown, in a similar way to the alignment chamber A502. - Next, numeral507 denotes a deposition chamber for fabrication of a second organic compound layer by vacuum evaporation , which will be called the deposition chamber B507. This deposition chamber B507 is provided with an
exhaust system 500 e. In addition it is shut and shielded from the alignment chamber B506 by a gate. not shown. Further, it comprises a cleaningpreliminary chamber 513 d which is shut and shielded from the deposition chamber B507 by a gate not shown, in a similar way to the deposition chamber A503. - In this embodiment a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber B507 for fabrication of a second organic compound layer which emits green light. Additionally provided as the evaporation sources are a first evaporation source provided with an organic compound with hole injectability, a second evaporation source and a third evaporation source each provided with organic compounds with hole transportability, a fourth evaporation source provided with a host material with hole transportability, a fifth evaporation source provided with an organic compound with luminescent ability, a sixth evaporation source provided with an organic compound with blocking ability, and a seventh evaporation source provided with an organic compound with electron transportability.
- It is noted that in this embodiment, Cu—Pc is employed as the organic compound with hole injectability provided in the first evaporation source; MTDATA is employed as the organic compound with hole transportability provided in the second evaporation source; α-NPD is employed as the organic compound with hole transportability provided in the third evaporation source; CBP is employed as the host material with hole transportability provided in the fourth evaporation source; tris (2-phenylpyridine) iridium (Ir(ppy)3) is employed as the organic compound with luminescent ability provided in the fifth evaporation source; BCP is employed as the organic compound with blocking ability provided in the sixth evaporation source; and, Alq3 is employed as the organic compound with electron transportability provided in the seventh evaporation source.
- It is noted the second organic compound layer can be formed over the anode by successive vacuum evaporation of these organic compounds, which comprises regions having functions of hole transportability, luminescent ability, blocking ability and electron transportability.
- Also note that in this embodiment, a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming both the function regions. More specifically, mixed regions are formed respectively at an interface between the hole transport region and the blocking region and at an interface between the blocking region and the electron transport region.
- Practically, after formed a first function region through deposition of Cu—Pc to a thickness of 10 nm, both Cu—Pc and MTDATA are deposited by a vacuum evaporation at a same time to thereby form a first mixed region with a film thickness of 5 to 10 nm. Then, fabricate a film of MTDATA to a thickness of 20 nm to thereby form a second function region, followed by formation of a second mixed region with a thickness of 5 to 10 nm by simultaneous vacuum evaporation of MTDATA and α-NPD. Thereafter fabricate a film of α-NPD to a thickness of 10 nm, thereby forming a third function region. Then, by simultaneous vacuum evaporation of α-NPD and CBP, a third mixed region is formed in thickness from 5 to 10 nm. Subsequently, fabricate a film of CBP to a thickness of 20 to 40 nm to thereby form a fourth function region. At the step of forming the fourth function region, (Ir(ppy)3) is deposited by simultaneous vacuum evaporation at part or entirety of the fourth function region, thus forming a fourth mixed region; then, simultaneously deposited CBP and BCP by vacuum evaporation to form a fifth mixed region with a thickness of 5 to 10 nm; next, deposit a BCP film of 10-nm thickness to thereby form a fifth function region; next, simultaneously deposit BCP and Alq3 by vacuum evaporation to form a sixth mixed region with a film thickness of 5 to 10 nm; lastly, form a film of Alq3 to a thickness of 40 nm, thus forming a sixth function region to thereby form a second organic compound layer.
- Noted that in the above explanation the organic compound layer is formed by vacuum evaporation from seven evaporation sources provided with organic compounds having different functions respectively as the second organic compound layer. The present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources. Additionally prior known materials may be used as organic compounds with a plurality of functions for forming an organic compound layer which emits green light.
- Next, the one indicated by numeral508 is an alignment chamber. Here. alignment of a metal mask and positioning of a substrate on the metal mask are done for deposition at a deposition chamber to which it will next be transferred. This will be called an alignment chamber C508. Additionally, the method explained in FIGS. 4A through 4E may be employed in the alignment method here. Additionally the alignment chamber C508 comprises a
gas exhaust system 500 f and is shut and shielded from the deposition chamber B507 by a gate not shown. It further comprises a cleaningpreliminary chamber 513 e that is shut and shielded from the alignment chamber C508 by a gate not shown, in a similar way to the alignment chamber A502. - Next, numeral509 denotes a deposition chamber for fabrication of a second organic compound layer by vacuum evaporation , which will be called the deposition chamber C509. This deposition chamber C509 is provided with an
exhaust system 500 g. In addition it is shut and shielded from the alignment chamber C508 by a gate not shown. Further, it comprises a cleaningpreliminary chamber 513 f which is shut and shielded from the deposition chamber C509 by a gate not shown, in a similar way to the alignment chamber A503. - In this embodiment a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber C509 for fabrication of a third organic compound layer which emits blue light. Additionally provided as the evaporation sources are a first evaporation source provided with an organic compound with hole injectability, a second evaporation source provided with organic compound with luminescent ability a third evaporation source provided with blocking ability, a fourth evaporation source provided with an organic compound with electron transportability. It is noted that in this embodiment, Cu—Pc is employed as the organic compound with hole injectability provided in the first evaporation source; α-NPD is employed as the organic compound with luminescent ability provided in the second evaporation source; BCP is employed as the organic compound with blocking ability provided in the third evaporation source; and, Alq3 is employed as the organic compound with electron transportability provided in the fourth evaporation source.
- It is noted the third organic compound layer can be formed over the anode by successive vacuum evaporation of these organic compounds, which comprises regions having functions of hole injectability, luminescent ability, blocking ability and electron transportability.
- Also note that in this embodiment, a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming both the function regions. More specifically, mixed regions are formed respectively at an interface between the luminescent region and the blocking region and at an interface between the blocking region and the electron transport region.
- Practically, after formed a first function region through deposition of Cu—Pc to a thickness of 20 nm, both Cu—Pc and α-NPD are deposited by a vacuum evaporation at a same time to thereby form a first mixed region with a film thickness of 5 to 10 nm. Then, fabricate a film of α-NPD to a thickness of 40 nm to thereby form a second function region, followed by formation of a second mixed region with a thickness of 5 to 10 nm by simultaneous vacuum evaporation of α-NPD and BCP. Thereafter fabricate a film of BCP to a thickness of 10 nm, thereby forming a third function region. Then, by simultaneous vacuum evaporation of BCP and Alq3, a third mixed region is formed in thickness from 5 to 10 nm; lastly, form a film of Alq3 to a thickness of 40 nm, to thereby form a third organic compound layer.
- Noted that in the above explanation the organic compound layer is formed by successive vacuum evaporation from fourth evaporation sources provided with four organic compounds having different functions respectively as the third organic compound layer. The present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources. Also, an organic compound provided in a single evaporation source is not limited to have one kind, may be a plurality of ones. For instance, in addition to a single kind of material provided in an evaporation source as the organic compound with luminescent ability, another organic compound that serve as a dopant may be provided together. Note that prior known materials may be used as organic compounds with a plurality of functions for forming an organic compound layer which emits blue light.
- Additionally in this embodiment, one specific case has been explained where the organic compound layer which emits red light is formed in the first deposition chamber A503 while forming the organic compound layer which emits green light in the second deposition chamber B507 and also forming the organic compound layer which emits blue light in the third deposition chamber C509. However, the order of formation of these layers should not be limited only the above order. One of the organic compound layers which emit lights of red, green, and blue, respectively may be formed within one of the deposition chamber A503, deposition chamber B507, and deposition chamber C509. Still alternatively, an additional deposition chamber may be provided for forming an organic compound layer which emits white light therein. Next, numeral 510 denotes a deposition chamber for formation of a conductive film being either the anode or the cathode of a luminescent element (a metal film used as the cathode in this embodiment) by vacuum evaporation, which will be called the deposition chamber D510. The deposition chamber D510 comprises an
exhaust system 500 h, in addition, is shut and shielded from the deposition chamber C509 by a gate not shown. Further, it comprises a cleaningpreliminary chamber 513 c which is sealed and shielded from the deposition chamber D510 by a gate not shown, in a similar manner to that of the deposition chamber A503. - In this embodiment a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber D510. Accordingly, in regard to a detailed operation of the deposition chamber D510, refer to the explanation of FIG. 2A.
- In this embodiment, in the deposition chamber D510, an Al—Li alloy film (film made of an alloy of aluminum and lithium) is deposited as the conductive film used as the cathode of the luminescent element. Additionally it will also possible to employ co-vacuum evaporation of aluminum and an element belonging to either the group I or group II of the periodic table.
- Alternatively a CVD chamber may be provided here for formation of an insulating film such as a silicon nitride film, silicon oxide film and DLC film or else as a protective film (passivation film) of the luminescent element. Note that in the case of providing such CVD chamber, it will be preferable that a gas purifying machine be provided for increasing in advance the purity of a material gases used in the CVD chamber.
- Next, numeral511 denotes a sealing chamber, which comprises an
exhaust system 500 i. In addition, it is shut and shielded from the deposition chamber D510 by a gate not shown. In theseal chamber 511, processing is to be done for finally enclosing a luminescent element in a sealed space. This processing is the treatment for protecting the luminescent element formed against oxygen and water, and employs a means for mechanically enclosing it by a cover material or alternatively for enclosing it by either thermally hardenable resin or ultraviolet-ray hardenable resin material. - While the cover material used may be glass, ceramics, plastic or metal, the cover material must have optical transmissivity in cases where light is emitted toward the cover material side. Additionally the cover material and a substrate with the above-stated luminescent element formed thereon are adhered together by use of a seal material such as thermal hardenable resin or ultraviolet-ray hardenable resin or else, thereby forming an air-tight sealed space by letting the resin be hardened through thermal processing or ultraviolet ray irradiation processing. It is also effective to provide in this sealed space a moisture absorbable material, typical example of which is barium oxide.
- It will also be possible to fill the space between the cover material and the substrate having the luminescent element formed thereon with either thermal hardenable resin or ultraviolet-ray hardenable resin. In this case, it is effective to add a moisture absorption material typically such as barium oxide into either the thermal hardenable resin or ultraviolet-ray hardenable resin.
- In the deposition apparatus shown in FIG. 5, a mechanism for irradiation of ultraviolet light to the interior of the seal chamber511 (referred to as the “ultraviolet light irradiation mechanism” hereinafter) is provided, which is arranged so that ultraviolet light as emitted from this ultraviolet light irradiation mechanism is used to harden the ultraviolet-ray hardenable resin.
- Lastly, numeral512 is an unload chamber, which comprises an
exhaust system 500 j. The substrate with luminescent element formed thereon will be taken out of here. - Further, the deposition apparatus indicated in this embodiment may be provided with a function of enabling replacement of an organic compound as shown in FIGS. 6A and 6B. In FIGS. 6A and 6B, a
deposition chamber 601 comprises asubstrate 602. And an organic compound for formation of an organic compound layer on the substrate is provided in anevaporation source 603. Note that, here, aevaporation source 603 is provided in amaterial exchange chamber 604 separated from thedeposition chamber 601 with the substrate furnished therein through agate 605. Accordingly, in this embodiment, thematerial exchange chamber 604 is separated from thedeposition chamber 601 by closure of thegate 605, organic compounds furnished in the evaporation source of thematerial exchange chamber 604 can be added or exchange by returning the interior of thematerial exchange chamber 604 to an atmospheric pressure via anexhaust system 606 and then taking the organic compounds out as shown in FIG. 6A. - And, after finished addition or exchange of the organic compounds, the
material exchange chamber 604 is returned to its original state again as shown in FIG. 6B, then, interior of thematerial exchange chamber 604 is set in a vacuum state by theexhaust system 606, and, after it has become the same pressure condition as the interior of deposition chamber, open thegate 605. Thus it is possible of vacuum evaporation from theevaporation source 603 to thesubstrate 602. - Note that the
material exchange chamber 604 is provided with a heater for heating the material thus exchanged. Preheating the material makes it possible to remove away impurities such as water or the like. It will be desirable that a temperature applied at this time be equal to or less than 200° C. - As described the above, by using the deposition apparatus shown in FIG. 5 (or FIGS. 6A and 6B), exposure of the luminescent element to the outside air is avoided until the luminescent element is completely enclosed in the sealed space. Thus, it is possible to manufacture a luminescent device with high reliability.
- [Embodiment 2]
- A deposition apparatus of the present invention will be explained with reference to FIGS. 7A and 7B. In FIGS. 7A and 7B,
reference numeral 701 denotes a transfer chamber, wherein thistransfer chamber 701 comprises a transfer mechanism A702 for performing transport of asubstrate 703. Thetransfer chamber 701 is set in a pressure-reduced atmosphere and is coupled by a gate with each processing chamber. A substrate is transported to each processing chamber by the transfer mechanism A702 upon opening of the gate. Additionally while exhaust pump such as a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic floatation type) or cryopump is employable for pressure reduction of thetransfer chamber 701, the turbo molecular pump of the magnetic flotation type is preferable in order to obtain high-degree vacuum states with higher purity. - An explanation will be given of each processing chamber below. Note that the
transfer chamber 701 is set in a pressure-reduced atmosphere so that all the processing chambers directly coupled to thetransfer chamber 701 are provided with vacuum pumps (not shown). While dry pumps, mechanical booster pumps, turbo molecular pumps (magnetic floatation type) or cryopumps are employable as the vacuum pumps, the turbo molecular pumps of the magnetic flotation type are preferable in this case also. First, numeral 704 denotes a load chamber for performing setting (installation) of a substrate. Theload chamber 704 is coupled by agate 700 a with thetransfer chamber 701, at here a carrier (not shown) with asubstrate 703 mounted thereon is arranged. Additionally theload chamber 704 can also do double-duty as a chamber that transfers a substrate which element formation is finished toward the sealing chamber. Additionally theload chamber 704 may alternatively have separated rooms for carry-in of the substrate and for carry-out of the substrate. Note that theload chamber 704 comprises the above described vacuum pomp and a purge line for introduction of a high-purity nitride gas or noble gas. Additionally the vacuum pump used herein is preferably a turbo molecular pump. Further, this purge line is provided with a gas refining machine for removal in advance of impurities (oxygen and water) of such gases to be introduced into the apparatus. - It is also noted that in this embodiment, a substrate which a transparent conductive film used as the anode of luminescent element is formed thereon is used as the
substrate 703. In this embodiment thesubstrate 703 is set in a carrier with its deposition surface being directed downwardly. This is for performing of face-down scheme (also known as “depo-up” scheme) when later performing deposition by vacuum evaporation methods. The face-down scheme is to be understood to mean a scheme for performing deposition while letting the deposition surface of a substrate being directed downwardly. With this scheme, it is possible to suppress attachment of contaminant particles such as dusts. - Next, the one indicated by
numeral 705 is an alignment chamber for alignment of a metal mask and for matching position between a metal mask and a substrate with either the anode or the cathode of luminescent element (anode in this embodiment) formed thereon, wherein thealignment chamber 705 is coupled by agate 700 b with thetransfer chamber 701. Note that a process in combination of the metal mask alignment and positioning of the substrate and metal mask is done within the alignment chamber, once at a time whenever a different organic compound layer is formed. In addition, thealignment chamber 705 comprises a charge-coupled device (CCD) known as an image sensor, thereby making it possible to accurately perform position alignment of the substrate and its associated metal mask in deposition using the metal mask. Note that with respect to metal mask alignment, the method discussed in FIGS. 4A through 4E may be used. - Further, a cleaning
preliminary chamber 722 a is coupled to thealignment chamber 705. An arrangement of the cleaningpreliminary chamber 722 a is as shown in FIG. 7B. First, the cleaningpreliminary chamber 722 a has aμ wave oscillator 731 for generation of μ waves, wherein μ waves generated at here will be sent through awave guide tube 732 toward aplasma discharge tube 733. Note that μ waves of about 2.45 GHz are radiated from theμ wave oscillator 731 used here. In addition, a reactive gases are supplied to theplasma discharge tube 733 from agas inlet tube 734. Additionally here, NF3 is used as the reactive gas, although other gases such as CF4 and ClF3 may be used as reactive gases. - And, the reactive gas is decomposed by μ wave in the
plasma discharge tube 733, causing radicals to generate. These radicals are guided to pass through thegas inlet tube 734 to introduce thealignment chamber 705 as coupled via a gate (not shown) thereto. Additionally theplasma discharge tube 733 may be provided with areflection plate 735 for efficient supplement of μ waves. - And, the
alignment chamber 705 comprises a metal mask with an organic compound layer attached thereto. And open a gate (not shown) provided between the cleaningpreliminary chamber 722 a and thealignment chamber 705, thereby enabling introduction of radicals into thealignment chamber 705. This makes it possible to perform cleaning of the metal mask. - As the use of L-wave plasma makes it possible to perform radicalization of a reactive gas with high efficiency, the rate of creation of impurities such as side products or the like is low. In addition, since it is different in mechanism from standard radical production, the resultant radicals will no longer be accelerated and radical is not produced within the interior of the deposition chamber. This makes it possible to prevent damages within the deposition chamber due to the presence of a plasma and also damages of the metal mask.
- It should be noted that the technique for cleaning the alignment chamber by use of the thus method is one of the preferred modes of the present invention so that this invention should not be limited thereto. Accordingly, it may also be performed a dry cleaning by introducing reactive gases into the deposition chamber to thereby produce a plasma within this deposition chamber, alternatively, a physical cleaning by sputter methods through introduction of an Ar gas or else.
- Next, numeral706 denotes a deposition chamber used for deposition of an organic compound layer by vacuum evaporation method, which will be called the deposition chamber A706 hereinafter. The deposition chamber A706 is coupled via a gate 700 c to the
transfer chamber 701. In this embodiment a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber A706. - With this embodiment, a first organic compound layer capable of emitting red light is formed at a
deposition unit 707 within the deposition chamber A706. A plurality of evaporation sources are provided with the deposition chamber A706, practically, there are provided a first evaporation source comprising an organic compound material with hole injectability, a second evaporation source comprising an organic compound with hole transportability, a third evaporation source comprising an organic compound with luminescent ability, and a fourth evaporation source comprising an organic compound with electron transportability. - Note that by successive vacuum evaporation of these organic compounds sequential vacuum evaporation, the organic compound layer can be formed above the anode, which comprises regions having functions of hole injectability, hole transportability, luminescent ability and electron transportability.
- Additionally in this embodiment, a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming such both function regions. More specifically, several mixed regions are formed at an interface between the hole injection region and the hole transport region, at an interface between the hole transport region and the luminescent region, and at an interface between the luminescent region and electron transport region, respectively.
- Noted that in the above explanation the organic compound layer is formed by successive vacuum evaporation from four evaporation sources provided with four organic compounds having different functions respectively as the first organic compound layer. The present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources. Also, an organic compound provided in a single evaporation source is not limited to have one kind, may be a plurality of ones. For instance, in addition to a single kind of material provided in an evaporation source as the organic compound with luminescent ability, another organic compound that serve as a dopant may be provided together. Additionally, as the organic compounds having the plurality of functions and forming the organic compound layer which emits red light, the ones as indicated in
Embodiment 1 is employable, although known materials are freely used in combination where necessary. - It is also noted that the deposition chamber A706 is coupled via a
gate 700 g to amaterial exchange chamber 714. Also note that thematerial exchange chamber 714 is provided with a heater for heating organic compounds exchanged. Preheating such organic compounds makes it possible to remove impurities such as water or the like. It will be desirable that a temperature being applied here be 200° C. or below. In addition, since thematerial exchange chamber 714 is provided with a vacuum pump capable of setting its interior in a pressure reduction, let the interior be set in such vacuum pressure state after heat up processing by addition or exchange of an organic compound from the outside. And, when it becomes the same pressure state as that within the deposition chamber, open thegate 700 g to thereby enable the evaporation source within the deposition chamber to be provided with an organic compound. Additionally the organic compound is provided at the evaporation source within the deposition chamber by means of a transfer mechanism. - Additionally, regarding the deposition process within the deposition chamber A706, refer to the explanation of FIG. 2A.
- Note that in a similar way to the
alignment chamber 705, a cleaningpreliminary chamber 722 b is coupled to the deposition chamber A706 via a gate (not shown). Additionally its practical arrangement is similar to that of the cleaningpreliminary chamber 722 a, thus, it is possible by introducing radicals generated in the cleaningpreliminary chamber 722 b into the deposition chamber A706 to remove organic compounds and the like being internally attached to the deposition chamber A706. - Next, numeral708 denotes a deposition chamber used for deposition of a second organic compound layer by vacuum evaporation method, which will be called the deposition chamber B708 hereinafter. The deposition chamber B708 is coupled via a
gate 700 d to thetransfer chamber 701. In this embodiment a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber B708. With this embodiment, the second organic compound layer capable of emitting green light is formed at adeposition unit 709 within the deposition chamber B708. - A plurality of evaporation sources are provided with the deposition chamber B708, practically, there are provided a first evaporation source comprising an organic compound with hole transportability, a second evaporation source comprising an organic compound with luminescent ability, a third evaporation source comprising an organic compound with blocking ability, and a fourth evaporation source comprising an organic compound with electron transportability.
- Note that sequential vacuum evaporation of these organic compounds makes it possible to form on the anode an organic compound layer consisting essentially of regions having functions of hole transportability, luminescent ability, blocking ability and electron transportability.
- Additionally in this embodiment, a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming such both function regions. More specifically, several mixed regions are formed at an interface between the hole transport region and the luminescent region, at an interface between the luminescent region and the blocking region, and at an interface between the blocking region and electron transport region, respectively.
- Noted that in the above explanation the organic compound layer is formed by successive vacuum evaporation from four evaporation sources provided with four organic compounds having different functions respectively as the second organic compound layer. The present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources. Also, an organic compound provided in a single evaporation source is not limited to have one kind, may be a plurality of ones. For instance, in addition to a single kind of material provided in an evaporation source as the organic compound with luminescent ability, another organic compound that serve as a dopant may be provided together. Additionally, as the organic compounds having the plurality of functions and forming the organic compound layer which emits green light, the ones as indicated in
Embodiment 1 is employable. although known materials are freely used in combination where necessary. - It is also noted that the deposition chamber B708 is coupled via a
gate 700 h to amaterial exchange chamber 715. Also note that thematerial exchange chamber 715 is provided with a heater for heating organic compounds exchanged. Preheating such organic compounds makes it possible to remove impurities such as water or the like. It will be desirable that a temperature being applied here be 200° C. or below. In addition, since thematerial exchange chamber 715 is provided with a vacuum pump so that after introducing organic compounds from the outside it is possible to set its interior in a pressure reduction by the vacuum pump. And, when it becomes the same pressure state as that within the deposition chamber, open thegate 700 h to thereby enable the evaporation source within the deposition chamber to be provided with an organic compound. Additionally the organic compound is provided at the evaporation source within the deposition chamber by means of a transfer mechanism. - Additionally, regarding the deposition process within the deposition chamber B708, refer to the explanation of FIG. 2A.
- Note that in a similar way to the
alignment chamber 705, a cleaningpreliminary chamber 722 c is coupled to the deposition chamber B708 via a gate (not shown). Additionally its practical arrangement is similar to that of the cleaningpreliminary chamber 722 a, thus, it is possible by introducing radicals generated in the cleaningpreliminary chamber 722 c into the deposition chamber B708 to remove organic compounds and the like being internally attached to the deposition chamber B708. - Next, numeral710 denotes a deposition chamber used for deposition of a third organic compound layer by vacuum evaporation method, which will be called the deposition chamber C710 hereinafter. The deposition chamber C710 is coupled via a
gate 700 e to thetransfer chamber 701. In this embodiment a deposition chamber with the structure shown in FIG. 2A is provided as the deposition chamber C710. With this embodiment, the third organic compound layer capable of emitting blue light is formed at adeposition unit 711 within the deposition chamber C710. - A plurality of evaporation sources are provided with the deposition chamber C710, practically, there are provided a first evaporation source comprising an organic compound with hole injectability, a second evaporation source comprising an organic compound with luminescent ability, a third evaporation source comprising an organic compound with blocking ability, and a fourth evaporation source comprising an organic compound with electron transportability.
- Note that sequential vacuum evaporation of these organic compounds makes it possible to form on the anode an organic compound layer consisting essentially of regions having functions of hole injectablity, luminescent ability, blocking ability and electron transportability.
- Additionally in this embodiment, a mixed region is formed at an interface between different function regions by simultaneous vacuum evaporation of organic compounds forming such both function regions. More specifically, several mixed regions are formed at an interface between the hole injection region and the luminescent region, at an interface between the luminescent region and the blocking region, and at an interface between the blocking region and electron transport region, respectively.
- Noted that in the above explanation the organic compound layer is formed by successive vacuum evaporation from four evaporation sources provided with four organic compounds having different functions respectively as the third organic compound layer. The present invention should not be limited only to the above and is modifiable as far as a plurality of evaporation sources. Also, an organic compound provided in a single evaporation source is not limited to have one kind, may be a plurality of ones. For instance, in addition to a single kind of material provided in an evaporation source as the organic compound with luminescent ability, another organic compound that serve as a dopant may be provided together. Additionally, as the organic compounds having the plurality of functions and forming the organic compound layer which emits blue light, the ones as indicated in
Embodiment 1 is employable, although known materials are freely used in combination where necessary. - It is also noted that the deposition chamber C710 is coupled via a
gate 700 i to amaterial exchange chamber 716. Also note that thematerial exchange chamber 715 is provided with a heater for heating organic compounds exchanged. Preheating such organic compounds makes it possible to remove impurities such as water or the like. It will be desirable that a temperature being applied here be 200° C. or below. In addition, since thematerial exchange chamber 716 is provided with a vacuum pump so that after introducing organic compounds from the outside it is possible to set its interior in a pressure reduction by the vacuum pump. And, when it becomes the same pressure state as that within the deposition chamber, open thegate 700 i to thereby enable the evaporation sources within the deposition chamber to be provided with organic compounds. Additionally the organic compound is provided at the evaporation source within the deposition chamber by means of a transfer mechanism. Additionally, regarding the deposition process within the deposition chamber C710, refer to the explanation of FIG. 2A. - Note that in a similar way to the
alignment chamber 705, a cleaningpreliminary chamber 722 d is coupled to the deposition chamber C710 via a gate (not shown). Additionally its practical arrangement is similar to that of the cleaningpreliminary chamber 722 a, thus, it is possible by introducing radicals generated in the cleaningpreliminary chamber 722 d into the deposition chamber C710 to remove organic compounds and the like being internally attached to the deposition chamber C710. - Next, numeral712 indicates a deposition chamber for fabricating by vacuum evaporation method a conductive film used as either the anode or cathode of a luminescent element (in this embodiment, a metal film used as the cathode), which chamber will be called the deposition chamber D712. This deposition chamber D712 is coupled via a
gate 700 f to thetransfer chamber 701. In this embodiment, at thedeposition unit 713 within the deposition chamber D712, an Al—Li alloy film (alloy film of aluminum and lithium) is to be formed as the conductive film used as the cathode of the luminescent element. It will also be possible to perform co-vacuum evaporation of both aluminum and an element belonging to either the group I or group II of the periodic table at a time. The term co-vacuum evaporation refers to a vacuum evaporation method that evaporation sources are heated simultaneously and different materials are mixed together at the deposition step. - It is also noted that the deposition chamber D712 is coupled via a
gate 700 j to amaterial exchange chamber 717. Also note that thematerial exchange chamber 717 is provided with a heater for heating organic compounds exchanged. Preheating such organic compounds makes it possible to remove impurities such as water or the like. It will be desirable that a temperature being applied here be 200° C. or below. In addition, since thematerial exchange chamber 717 is provided with a vacuum pump so that after introducing conductive materials from the outside it is possible to set its interior in a pressure reduction by the vacuum pump. And, when it becomes the same pressure state as that within the deposition chamber, open thegate 700 j to thereby enable the evaporation sources within the deposition chamber to be provided with conductive materials. - Note that in a similar way to the
alignment chamber 705, a cleaningpreliminary chamber 722 e is coupled to the deposition chamber D712 via a gate (not shown). Additionally its practical arrangement is similar to that of the cleaningpreliminary chamber 722 a, thus, it is possible by introducing radicals generated in the cleaningpreliminary chamber 722 e into the deposition chamber D712 to remove conductive materials and the like being internally attached to the deposition chamber D712. - In addition a respective one of the deposition chamber A706, the deposition chamber B708, the deposition chamber C710 and deposition chamber D712 comprises a mechanism for heating the interior of each deposition chamber. Whereby it is possible to remove part of impurities in the deposition chambers.
- Further note that although dry pumps, mechanical booster pumps, turbo molecular pumps (magnetic floatation type) or cryopumps are employable as the vacuum pumps provided in these deposition chambers, it is desirable that the cryopumps and dry pumps be used in this embodiment.
- In addition, the deposition chamber A706, the deposition chamber B708, the deposition chamber C710 and deposition chamber D712 are reduced in pressure by the vacuum pumps. It is desirable that the finally reached degree of vacuum at this time be greater than or equal to 10−6 Pa. For example, with the use of a cryopump with its evacuation rate of 10,000 l/s (H2O), a leakage amount within a deposition chamber must be less than or equal to 4.1×10−7 Pa*m3*s−1 for 20 hours, when the interior of the deposition chamber is formed of aluminum while letting a surface area of the deposition chamber interior measure 10 m2. In order to obtain such vacuum degree, it is effective to minimize by electro-polishing techniques the surface area of the deposition chamber interior.
- Next, numeral718 denotes a sealing chamber (also known as an enclosing chamber or “glove box”), which is coupled via a
gate 700 k to theload chamber 704. In the sealingchamber 718, processing for finally enclosing a luminescent element into a sealed space is performed. This processing is for protection of the formed luminescent element against oxygen and water, which employs a means for mechanically enclosing by cover material or alternatively enclosing by using either thermally hardenable resin or ultraviolet ray hardenable resin material. - While the cover material used may be glass, ceramics, plastic or metal, the cover material must have optical transmissivity in cases where light is emitted toward the cover material side. Additionally the cover material and a substrate with the above-stated luminescent element formed thereon are adhered together by use of a seal material such as thermal hardenable resin or ultraviolet-ray hardenable resin or else, thereby forming an air-tight sealed space by letting the resin be hardened through thermal processing or ultraviolet ray irradiation processing. It is also effective to provide in this sealed space a moisture absorbable material, typical example of which is barium oxide.
- It will also be possible to fill the space between the cover material and the substrate having the luminescent element formed thereon with either thermal hardenable resin or ultraviolet-ray hardenable resin. In this case, it is effective to add a moisture absorption material typically such as barium oxide into either the thermal hardenable resin or ultraviolet-ray hardenable resin.
- In the deposition apparatus shown in FIG. 7A, a
mechanism 719 for irradiation of ultraviolet light to the interior of the sealing chamber 718 (referred to as the “ultraviolet light irradiation mechanism” hereinafter) is provided, which is arranged so that ultraviolet light as emitted from this ultravioletlight irradiation mechanism 719 is used to harden the ultraviolet-ray hardenable resin. Attachment of a vacuum pump makes also possible to reduce pressure within the sealingchamber 718. In case the above sealing process is done mechanically by robot operation, it is possible by performing this process to prevent mixture of oxygen and water because of atmosphere in reduced pressure. Practically it is desired that the concentrations of such oxygen and water be made less than or equal to 0.3 ppm. Additionally, it is also possible that the interior of theseal chamber 718 is pressurized adversely. In this case, the sealingchamber 718 is purged by a nitride gas or noble gas of high purity and pressurized, thereby the invasion of oxygen or the like from the outside is prevented. - Next, a delivery chamber (pass box)720 is coupled to the sealing
chamber 718. Thedelivery chamber 720 is provided with a transfer mechanism B721 for transferring toward the delivery chamber 720 a substrate which sealing of the luminescent element is completed in the sealingchamber 718. The delivery chamber 720) also can be set in a reduced pressure state by attachment of a vacuum pump thereto. Thisdelivery chamber 720 is the facility that prevents the sealingchamber 718 from being exposed directly to the outside air, from which the substrate is removed. Optionally it is also possible to provide a member supply chamber (not shown) for supplying members to be used in the sealing chamber. - It must be noted that although ′not shown in diagrams of this embodiment, insulating films with lamination of chemical compounds including silicon such as silicon nitride or silicon oxide and with lamination of a diamond like carbon (DLC) film containing carbon on these chemical compounds may be formed on a luminescent element after forming the luminescent element. Additionally the term diamond-like carbon (DLC) film refers to an amorphous film with a mixture of diamond bonding (sp3 bond) and graphite bond (Sp2 bond). Note that in this case, a deposition chamber may be provided which comprises a chemical vapor deposition (CVD) apparatus for generating a plasma by application of a self bias to thereby form a thin film through plasma discharge decomposition of material gases.
- Note that in the deposition chamber comprising such chemical vapor deposition (CVD) apparatus, there may be used oxygen (O2), hydrogen (H2) methane (CH4), ammonia (NH3) and silane (SiH4). Also note that as the CVD apparatus, there is employable the one that has electrodes of the parallel flat-plate type with RF power supply of 13.56 MHz.
- Further, it is also possible to provide a deposition chamber for performing deposition by sputtering methods (also called sputter methods). This is due to the fact that deposition by sputtering is effective in the case of forming the anode after forming organic compound layers on the cathode of a luminescent element. In other words, it is effective in cases where a pixel electrode is the cathode. Additionally the interior of such deposition chamber is set at an atmosphere with oxygen added to argon during deposition whereby the concentration of oxygen in a film thus fabricated is well controlled to enable formation of a low resistance film that is high in optical transmissivity. Also note that it will be desirable that the deposition chamber be shielded by a gate from the transfer chamber in a similar manner to the remaining deposition chambers.
- It is to be noted that in the deposition chamber for sputtering, a mechanism may be provided which is operable to control the temperature of such substrate deposited. Additionally it is desirable that the substrate deposited be kept at temperature ranging from 20 to 150° C. Further, although a dry pump, mechanical booster pump, turbo molecular pump (magnetic floatation type) or cryopump is useable as a vacuum pump to be provided in the deposition chamber, the turbo molecular pump (the magnetic flotation type) and dry pump are preferably employed in this embodiment.
- As apparent from the foregoing, the use of the deposition apparatus shown in FIGS. 7A and 7B makes it possible to prevent exposure of a luminescent element to the outside air until the luminescent element is completely enclosed in an air-tight sealed space, which in turn enables successful manufacture of a luminescent device with high reliability.
- [Embodiment 3]
- In this embodiment, a deposition apparatus will be explained with reference to FIGS. 8A and 8B, which is different in substrate transfer method and structure from the deposition apparatus of the inline type as has been indicated in the
embodiment 1. - In FIGS. 8A and 8B, a
substrate 804 as loaded into aload chamber 800 is transported toward afirst alignment unit 801 which is coupled thereto via a gate (not shown). Note that thesubstrate 804 is subjected to alignment by the method discussed in FIGS. 4A through 4E and then fixed to aholder 802 along with ametal mask 803. - And, the
substrate 804 is transferred to afirst deposition unit 805 together with theholder 802. Note here that thefirst alignment unit 801 and thefirst deposition unit 805 are coupled together via no gates and have the same space. Then, in this embodiment, arail 812 is provided as a means for enabling free movement between thefirst alignment unit 801 and thefirst deposition unit 805, wherein each processing is to be done while theholder 802 is moving along this rail. Additionally the processing position during alignment and deposition is controlled by a control mechanism owned by theholder 802. - And in the
first deposition unit 805, different organic compounds is deposited by vacuum evaporation from a plurality ofevaporation sources 806 furnished with the organic compounds respectively to thereby form a first organic compound layer. Note that this movement means will also be used in the case of transfer toward asecond alignment unit 807 and asecond deposition unit 808 for fabrication of a second organic compound layer in a similar way to that discussed above. - Further, in the case of forming a third organic compound also, it is similarly transferred to a
third alignment unit 809 and athird deposition unit 810. - As discussed above in this embodiment, it is possible to form three different kinds of organic compound layers within the same space. The
third deposition unit 810 is coupled via a gate (not shown) to an unloadchamber 811, thus enabling unloading of a substrate with deposition completed. - It is noted that the processing method at the alignment units and the deposition units in this embodiment is similar to that in the alignment and the deposition chambers of the
embodiment 1. - It is also noted that in this embodiment, provision of a partition wall between the alignment units and the deposition units makes it possible to prevent organic compounds from dispersing out of the evaporation sources during deposition toward locations other than the deposition units.
- In the deposition apparatus of this embodiment also, a cleaning
preliminary chamber 813 may be provided for cleaning of the interior of each deposition chamber and metal masks. - Forming a plurality of organic compound layers are formed within the same space by using the deposition apparatus stated above, movement between different organic compound layers during formation, thus making it possible to shorten a time as taken to complete the processing.
- Note here that while in the deposition apparatus indicated in this embodiment it is possible to form three kinds of organic compound layers having a plurality functions on a substrate with the anode or cathode of a luminescent through continuous vacuum evaporation processes in the deposition chamber. It is modifiable that a further deposition chamber for fabrication of a conductive film is provided for enabling continuous formation of the cathode or anode of such luminescent element. Additionally in the case of forming the cathode, the conductive film may be an Al—Li alloy film (alloy film of aluminum and lithium) or alternatively a film obtained by co-vacuum evaporation of both aluminum and an element belonging to either the group I or group II of the periodic table at a time, in the case of forming the anode, there may be used indium oxide, tin oxide, zinc oxide, or an alloys of them (such as ITO).
- In addition to the above, it is also possible to provide a processing chamber for performing a sealing of the luminescent element thus manufactured.
- [Embodiment 4]
- In this embodiment an explanation will be given of a luminescent device manufactured by use of the deposition apparatus of the present invention. FIG. 9 is a diagram showing a cross-sectional view of an active matrix type luminescent device. Note that although thin film transistors (referred to as “TFTs” hereinafter) are employed as active elements, these are replaceable by MOS transistors.
- Additionally, although top gate type TFTs (practically planar type TFTs) will be exemplarily indicated as the TFTs, bottom gate type TFTs (typically, inverse stagger type TFTs) is alternatively employable.
- In FIG. 9, numeral901 denotes a substrate, here, which permits transmission of visible light rays. Practically, a glass substrate, a quartz substrate, a crystallized glass substrate or plastic substrate (including a plastic film) are useable. Note that the
substrate 901 includes an insulating film provided on the surface thereof. - A
pixel portion 911 and adrive circuit 912 are provided on thesubstrate 901. Thepixel portion 911 will first be explained below. - The
pixel portion 911 is a region that performs image displaying. A plurality of pixels are present on the substrate, each of which is provided with aTFT 902 for control of a current flowing in a luminescent element (referred to hereinafter as current controlling TFT), a pixel electrode (anode) 903, anorganic compound layer 904 and acathode 905. In addition, numeral 913 denotes a TFT for controlling a voltage applied to the gate of the current controlling TFT (referred to as switching TFT hereinafter). - Preferably here, the current controlling
TFT 902 is a p-channel type TFT. although it may alternatively be an n-channel TFT, the use of p-channel TFT makes it possible to suppress consumption of electrical power in case the current controlling TFT is connected to the anode of the luminescent element as shown in FIG. 9. Note however that the switchingTFT 913 may be either n-channel TFT or p-channel TFT. - It is noted that drain of the current controlling
TFT 902 is electrically connected with thepixel electrode 903. In this embodiment, since thepixel electrode 903 is used a conductive material with its work function within a range of 4.5 to 5.5 eV, thepixel electrode 903 functions as the anode of the luminescent element. Thepixel electrode 903 may typically be made of indium oxide, tin oxide, zinc oxide, or compounds thereof (such as ITO). Theorganic compound layer 904 is provided on thepixel electrode 903. - Further, the
cathode 905 is provided on theorganic compound layer 904. It is desirable that thecathode 905 be made of a conductive material with its work function ranging from 2.5 to 3.5 eV. Thecathode 905 is typically made from a conductive film containing alkaline metal elements or alkali rare metal elements, a conductive film containing aluminum, and one that aluminum or silver is laminated on the above conductive films. - In addition the
luminescent element 914 comprising thepixel electrode 903, theorganic compound layer 904, andcathode 905 is covered with aprotective film 906. Thisprotective film 906 is provided for protection of theluminescent element 914 against oxygen and water. Theprotective film 906 is made of material such as silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide or carbon (typically, diamond like carbon). - An explanation will next be given of the
drive circuit 912. Thedrive circuit 912 is the region that controls the timing of signals (gate signal and data signal) being sent to thepixel portion 911, which is provided with a shift register, a buffer, a latch, an analog switch (transfer gate), or a level shifter. In FIG. 9 a CMOS circuit is shown which is made up of an n-channel TFT 907 and p-channel TFT 908 for use as a basic unit of these circuits. - The circuit structure of the shift register, the buffer, the latch, the analog switch transfer gate) or the level shifter may be designed in a known way. Additionally although in FIG. 9 the
pixel portion 911 and thedrive circuit 912 are provided on the same substrate, it is also possible to electrically connect IC and LSI without providing thedrive circuit 912. - Additionally, although in FIG. 9 the pixel electrode (anode)903 is electrically connected to the current
controlling TFT 902, this may be modified into a structure with the cathode connected to the current controlling TFT. In such case, thepixel electrode 903 may be made of the same material as that of thecathode 905 while letting the cathode be made of similar material to that of the pixel electrode (anode) 903. In such case it will be preferable that the current controlling TFT be an n-channel TFT. - It is also noted that in this embodiment, a shape with an cave (called the eave structure hereinafter) consisting essentially of a
wiring line 909 and aseparation portion 910 is provided. The eave structure made of thewiring line 909 and theseparation portion 910 shown in FIG. 9 is manufacturable by a method having the steps of laminating a metal constituting thewiring line 909 and a material (e.g. metal nitrides) that forms theseparation portion 910 and has a lower etch rate than the metal and then of etching the same. With use of this shape, it is possible to prevent thepixel electrode 903 and thewiring line 909 from electrically shorting with thecathode 905. Additionally in this embodiment, unlike standard active matrix type luminescent devices, thecathode 905 on a pixel is formed into a stripe shape (in a similar manner to that of the cathode of a passive matrix). - Here, an appearance of the active matrix type luminescent device of FIG. 9 is shown in FIGS. 10A and 10B. Note here that an upper plan view is shown in FIG. 10A whereas a sectional view taken along line A-A′ of FIG. 10A is shown in FIG. 10B. Additionally the reference numerals used in FIG. 9 are also used here.
-
Numeral 1001 indicated by dotted lines denotes a source side drive circuit; 1002 denotes a pixel portion; 1003 is a gate side drive circuit. In addition, 1004 indicates a cover material, and 1005 is a seal material, wherein aspace 1007 is provided in interior part surrounded by theseal material 1005. - Additionally, numeral1008 denotes a wiring line which transfers signal as input to the source
side drive circuit 1001 and gateside drive circuit 1003, which receives a video signal and a clock signal from a flexible printed circuit (FPC) 1009 for use as an external input terminal. Note that although the FPC alone is depicted herein, a printed wiring board (PWB) is attachable to this FPC. The luminescent device of the subject patent application includes an IC-mounted luminescent module as well as a luminescent module with either the FPC or the PWB attached onto a luminescent panel. - An explanation will next be given of the sectional structure with reference to FIG. 10B. The
pixel portion 1002 and the gateside drive circuit 1003 are formed at upper part of thesubstrate 901, wherein thepixel portion 1002 is formed of a plurality of pixels each including the currentcontrolling TFT 902 and thepixel electrode 903 electrically connected to the drain of the current controlling TFT. Additionally the gateside drive circuit 1003 is formed using a CMOS circuit with a combination of the n-channel TFT 907 and the p-channel TFT 908. Thepixel electrode 903 functions as the anode of a luminescent element. In addition aninterlayer insulating film 1006 is formed at the opposite ends of thepixel electrode 903, and theorganic compound layer 904 and thecathode 905 of the luminescent element are formed on thepixel electrode 903. - The
cathode 905 also serves as a common wiring line for a plurality of pixels and is electrically connected via theconnection lead 1008 with theFPC 1009. Further all the elements involved in thepixel portion 1002 and the gateside drive circuit 1003 are covered with theprotective film 906. - Note that the
cover material 1004 is adhered by theseal material 1005. Additionally a spacer formed of a resin film may be provided in order to retain a distance between thecover material 1004 and the luminescent element. And an interior of theseal material 1005 becomes a sealed space, in which a inactive gas such as nitrogen or argon or else is filled. Optionally it is also be effective to provide in this sealed space a moisture absorption material such as barium oxide. - Note that while a glass, a ceramics, a plastic or metals are usable as the cover material, it must be optical transmissivity in the case of irradiating light onto the cover material side. Additionally fiberglass-reinforced plastics (FRP), polyvinylfluoride (PVF), Mylar, polyester or acryl is useable as the plastic material.
- The
luminescent element 914 formed on the substrate is sealed by using thecover material 1004 and theseal material 1005 and thus it is possible to completely shield it from the outside and prevent invasion of material which accelerates degradation of organic compound layers due to oxidation such as water and oxygen. Thus it is possible to obtain the luminescent device with high reliability. - Another luminescent device different in structure from the one discussed in FIG. 9 will be explained with reference to FIG. 15. Arrangements of a switching TFT1513 and a current controlling TFT 1502 in a
pixel portion 1511 and arrangements of a p-channel TFT 1508 and an n-channel TFT 1507 in adriver circuit 1512 are similar to those in FIG. 9. A method of forming aluminescent element 1514 comprising ananode 1503, anorganic compound layer 1504, and acathode 1505 is different from that shown in FIG. 9. - Although in FIG. 9 vacuum evaporation method is used for formation of the luminescent element, in this embodiment a structure shown in FIG. 15 is formed by employing a method that an ionized organic compound is vacuum evaporated (ion-plating method). Note that this structure is desirable because of its capability to permit reflection of light emitted. Additionally the
luminescent element 1514 is coated with aprotective film 1506 formed of an insulating film containing silicon. - Note that the luminescent device in this embodiment is capable of deposition using the deposition apparatus explained in the
embodiments 1 to 3. - [Embodiment 5]
- In this embodiment an explanation is given of a luminescent device of the passive type (simple matrix type) which is manufactured by the deposition apparatus of the present invention with reference to FIG. 11. In FIG. 11, numeral1101 denotes a glass substrate whereas 1102 denotes an anode formed of a transparent conductive film. In this embodiment a chemical compound comprising indium oxide and zinc oxide is formed by vacuum evaporation as the transparent conductive film. Note that although not shown in FIG. 11, a plurality of anodes are laid out in a direction parallel to the surface of drawing paper sheet.
- In addition, cathode partition walls (1103 a, 1103 b) are formed so that these intersect the
anodes 1102 laid out into a stripe shape. The cathode partition walls (1103 a, 1103 b) are formed in a vertical direction to the surface of the drawing sheet. - Next, an
organic compound layer 1104 is formed. Theorganic compound layer 1104 thus formed here preferably has a plurality of function regions by combination a plurality of organic compounds each of which has function of the hole injectability, hole transportability, luminescent ability, blocking ability, electron transportability or electron injectability. - Note that in this embodiment also, a mixed region is formed between adjacent function regions. Additionally the mixed region is formed by using the method indicated in the embodiments stated supra.
- Also note that these
organic compound layers 1104 are formed along grooves defined by the cathode partition walls (1103 a, 1103 b) and thus are laid out into a stripe shape in the vertical direction to the surface of the drawing sheet. - Thereafter, a plurality of
cathodes 1105 are laid out into a stripe shape in such a manner that these cross theanodes 1102 with the vertical direction to the surface of the drawing sheet becoming the longitudinal direction thereof. Additionally in this embodiment, thecathodes 1105 are made of MgAg and fabricated by vacuum evaporation. In addition, although not specifically depicted herein, thecathodes 1105 are designed so that a wiring lines are extended to reach portions to which an FPC is attached, thereby enabling application of a given voltage. Further, after forming thecathodes 1105, a silicon nitride film is provided as aprotective film 1106. - Through the processes above, a luminescent element1111 is formed on the
substrate 1101. Note here that in this embodiment, lower side electrodes are theanodes 1102 with optical transmittance so that light produced at an organic compound layer emits onto a lower surface (substrate 1101 side). However, it is also possible that the structure of the luminescent element 1111 is reversed to thereby let the lower side electrodes be cathodes with optical shieldability. In such case, light produced at theorganic compound layer 1104 is emitted to an upper surface (opposite side to substrate 1101). - Next, prepare a ceramics substrate for use as a
cover material 1107. With the structure of this embodiment, though the ceramics substrate is used due to its superiority of light shielding performance, obviously, in case the structure that the luminescent element 1111 is reversed in the way described previously, a substrate made of plastic or glass may be used in view of the fact that thecover material 1107 is better in light transmittance. - The
cover material 1107 thus prepared is then adhered by aseating material 1109 made of ultraviolet ray hardenable resin. Note that an interior 1108 of theseal material 1109 becomes an air-tight closed space, which is filled with an inactive gas such as nitrogen or argon. Optionally it will also be effective to provide in this sealed space 1108 a moisture absorption material such as barium oxide. Lastly attach an anisotropic conductive film (FPC) 1110, thus completing the passive type luminescent device. - It should be noted that the luminescent device as indicated in this embodiment is manufacturable by use of any one of the deposition apparatuses indicated in the
embodiments 1 to 3. - [Embodiment 6]
- Being self-luminous, a luminescent device using a luminescent element has better visibility in bright places and wider viewing angle than liquid crystal display devices. Therefore various electric appliances can be completed by using the luminescent device of the present invention.
- Given as examples of an electric appliance that employs a luminescent device manufactured in accordance with the present invention are video cameras, digital cameras, goggle type displays (head mounted displays), navigation systems, audio reproducing devices (such as car audio and audio components), notebook computers. game machines, portable information terminals (such as mobile computers, cellular phones, portable game machines, and electronic books), and image reproducing devices equipped with recording media (specifically, devices with a display device that can reproduce data in a recording medium such as a digital video disk (DVD) to display an image of the data). Wide viewing angle is important particularly for portable information terminals because their screens are often slanted when they are looked at. Therefore it is preferable for portable information terminals to employ the luminescent device using the luminescent element. Specific examples of these electric appliance are shown in FIGS. 12A to12H.
- FIG. 12A shows a display device, which is composed of a
case 2001, asupport base 2002, adisplay unit 2003,speaker units 2004, avideo input terminal 2005, etc. The luminescent device manufactured in accordance with the present invention can be applied to thedisplay unit 2003. Since the luminescent device having the luminescent element is self-luminous, the device does not need back light and can make a thinner display unit than liquid crystal display devices. The display device refers to all display devices for displaying information, including ones for personal computers, for TV broadcasting reception, and for advertisement. - FIG. 12B shows a digital still camera, which is composed of a
main body 2101. adisplay unit 2102, animage receiving unit 2103,operation keys 2104, anexternal connection port 2105, ashutter 2106, etc. The luminescent device manufactured in accordance with the present invention can be applied to thedisplay unit 2102. - FIG. 12C shows a notebook personal computer, which is composed of a
main body 2201, acase 2202, adisplay unit 2203, akeyboard 2204, anexternal connection port 2205, apointing mouse 2206, etc. The luminescent device manufactured in accordance with the present invention can be applied to thedisplay unit 2203. - FIG. 12D shows a mobile computer, which is composed of a
main body 2301, adisplay unit 2302, aswitch 2303,operation keys 2304, aninfrared port 2305, etc. The luminescent device manufactured in accordance with the present invention can be applied to thedisplay unit 2302. FIG. 12E shows a portable image reproducing device equipped with a recording medium (a DVD player, to be specific). The device is composed of amain body 2401. acase 2402, a display unit A2403, adisplay unit B 2404, a recording medium (DVD or the like)reading unit 2405,operation keys 2406,speaker units 2407, etc. Thedisplay unit A 2403 mainly displays image information whereas thedisplay unit B 2404 mainly displays text information. The luminescent device manufactured in accordance with the present invention can be applied to the display units A 2403 andB 2404. The image reproducing device equipped with a recording medium also includes home-video game machines. - FIG. 12F shows a goggle type display (head mounted display), which is composed of a
main body 2501,display units 2502, andarm units 2503. The luminescent device manufactured in accordance with the present invention can be applied to thedisplay units 2502. - FIG. 12G shows a video camera, which is composed of a
main body 2601, adisplay unit 2602, acase 2603, anexternal connection port 2604, a remotecontrol receiving unit 2605, animage receiving unit 2606, abattery 2607, anaudio input unit 2608,operation keys 2609,eye piece portion 2610 etc. The luminescent device manufactured in accordance with the present invention can be applied to thedisplay unit 2602. - FIG. 12H shows a cellular phone, which is composed of a
main body 2701, acase 2702, adisplay unit 2703, anaudio input unit 2704, anaudio output unit 2705,operation keys 2706, anexternal connection port 2707, anantenna 2708, etc. The luminescent device manufactured in accordance with the present invention can be applied to thedisplay unit 2703. If thedisplay unit 2703 displays white letters on black background, the cellular phone consumes less power. - If the luminance of light emitted from organic materials is raised in future, the luminescent device can be used in front or rear projectors by enlarging light that contains outputted image information through a lens or the like and projecting the light.
- These electric appliances now display with increasing frequency information sent through electronic communication lines such as the Internet and CATV (cable television), especially, animation information. Since organic materials have very fast response speed, the luminescent device is suitable for animation display.
- In the luminescent device, luminescent portions consume power and therefore it is preferable to display information in a manner that requires less luminescent portions. When using the luminescent device in display units of portable information terminals, particularly cellular phones and audio reproducing devices that mainly display text information, it is preferable to drive the device such that non luminescent portions form a background and luminescent portions form text information.
- As described above, the application range of the luminescent device manufactured by using the deposition device of the present invention is so wide that it is applicable to electric appliances of any field. The electric appliances of this embodiment can employ as their display units any luminescent device shown in Embodiments 4 or 5, which is formed by the deposition apparatus shown in
Embodiments 1 to 3. - [Embodiment 7]
- In this embodiment, the pixel portion structure of the luminescent device formed by a deposition apparatus of the present invention is described.
- A part of the top surface view of a
pixel portion 1911 is shown in FIG. 16A. Theplural pixels 1912 a to 1912 c are formed in thepixel portion 1911. The top surface view shows the state of an insulatinglayer 1902 formed to cover the edge portion of the pixel electrode formed in a pixel. Thus, the insulatinglayer 1902 is formed to cover asource line 1913, ascanning line 1914 and acurrent supply line 1915. The insulatinglayer 1902 also covers the region a (1903) where connection portion between the pixel electrode and the TFT is formed at the bottom thereof. - In addition, FIG. 16B shows a cross-section view taken along the dot line A-A of the
pixel portion 1911 shown in FIG. 16A and the state of formingorganic compound layers 1905 a to 19105 c on thepixel electrode 1901. Further, the organic compound layer composed by same material is formed in the vertical direction to the drawing sheet, and the organic compound layer composed by different material is formed in the horizontal direction to the drawing sheet. - For example, the organic compound layer (R)1905 a emitted red light is formed in the pixel (R) 1912 a, the organic compound layer (G) 1905 b emitted green light is formed in the pixel (G) 1912 b and the organic compound layer (B) 1905 c emitted blue light is formed in the pixel (B) 1912 c. The insulating
film 1902 becomes a margin when the organic compound layer is formed. There is no problem if it is on the insulatingfilm 1902 even if the deposition position of the organic compound layer shifts somewhat, and the organic compound layer composed by different material comes in succession on the insulatingfilm 1902 as shown in FIG. 16B. - In addition, FIG. 16C shows a cross-section view taken along the dot line B-B of the
pixel portion 1911 shown in FIG. 16A and the state of forming the organic compound layer 1905 on thepixel electrode 1901 same as FIG. 16B. - The pixel taken along the dot line B-B′ have a structure shown in FIG. 16C. because the organic compound layer (R)1905 a emitted red light same as the pixel (R) 1912 a is formed in above-mentioned pixel.
- Therefore, the organic compound layer (R)1905 a emitted red light, the organic compound layer (G) 1905 b emitted green light and the organic compound layer (B) 1905 c emitted blue light are formed in the
pixel portion 1911. Thus, the full-color of the luminescent device can be realized. - As has been described above, fabricating organic compound layers of the luminescent element by use of the deposition apparatus of the present invention makes it possible to continuously form the organic compound layers each having a plurality of function regions, which in turn enables preclusion of contamination of impurities at the interface of adjacent ones of such function regions. Furthermore, it is also possible to form between the function regions a mixed region consisting essentially of the organic compounds that form respective function regions, thereby enabling relaxation of energy barrier between organic layers at the function region interface. This in turn makes it possible to improve the carrier injectability between the organic layers, thus enabling formation of the organic luminescent elements capable of reducing drive voltages while at the same time offering longer lifetime thereof.
Claims (43)
1. A deposition apparatus comprising:
a plurality of deposition chambers; and
a plurality of evaporation sources in said deposition chambers;
wherein each of the plurality of evaporation sources comprises at least one organic compound having a different function, and
wherein the organic compounds having the different functions are continuously deposited by a vacuum evaporation from said plurality of evaporation sources.
2. A deposition apparatus according to claim 1 , wherein the deposition apparatus comprises:
a first deposition chamber forming a first organic compound layer,
a second deposition chamber forming a second organic compound layer, and
a third deposition chamber forming a third organic compound layer.
3. A deposition apparatus according to claim 2 , wherein:
said first organic compound layer emits a red light,
said second organic compound layer emits a green light, and
said third organic compound layer emits a blue light.
4. A deposition apparatus according to claim 1 , wherein each said evaporation source has an organic compound selected from the group consisting of a hole injectability, hole transportability, luminescent ability, blocking ability, electron transportability, or electron injectability.
5. A deposition apparatus comprising:
a plurality of deposition chambers; and
a plurality of evaporation sources in said deposition chambers;
wherein each of the plurality of evaporating sources comprises at least one organic compound having a different function, and
wherein at least two of the organic compounds having the different functions are simultaneously deposited by a vacuum evaporation from said plurality of evaporation sources.
6. A deposition apparatus according to claim 5 , wherein the deposition apparatus comprises:
a first deposition chamber forming a first organic compound layer,
a second deposition chamber forming a second organic compound layer, and
a third deposition chamber forming a third organic compound layer.
7. A deposition apparatus according to claim 6 , wherein:
said first organic compound layer emits a red light,
said second organic compound layer emits a green light, and
said third organic compound layer emits a blue light.
8. A deposition apparatus according to claim 5 , wherein each said evaporation source has an organic compound selected from the group consisting of a hole injectability, hole transportability, luminescent ability, blocking ability, electron transportability, or electron injectability.
9. A deposition apparatus comprising:
a load chamber;
an alignment chamber having a function of performing an alignment of a position between a metal mask and a substrate;
a deposition chamber; and
a plurality of evaporation sources in said deposition chamber;
wherein the load chamber, the alignment chamber, and the deposition chamber are connected in series;
wherein each of the plurality of evaporation sources comprises at least one organic compound having a different function; and
wherein the organic compounds having the different functions are continuously deposited by a vacuum evaporation from said plurality of evaporation sources.
10. A deposition apparatus according to claim 9 , wherein the deposition apparatus comprises:
a first deposition chamber forming a first organic compound layer,
a second deposition chamber forming a second organic compound layer, and
a third deposition chamber forming a third organic compound layer.
11. A deposition apparatus according to claim 10 , wherein:
said first organic compound layer emits a red light,
said second organic compound layer emits a green light, and
said third organic compound layer emits a blue light.
12. A deposition apparatus according to claim 9 , wherein each said evaporation source has an organic compound selected from the group consisting of a hole injectability, hole transportability, luminescent ability, blocking ability, electron transportability, or electron injectability.
13. A deposition apparatus comprising:
a load chamber;
an alignment chamber having a function of performing an alignment of a position between a metal mask and a substrate;
a deposition chamber; and
a plurality of evaporation sources in said deposition chamber;
wherein the load chamber, the alignment chamber, and the deposition chamber are connected in series;
wherein each of the plurality of evaporating sources comprises at least one organic compound having a different function, and wherein at least two of the organic compounds having the different functions are simultaneously deposited by a vacuum evaporation from said plurality of evaporation sources.
14. A deposition apparatus according to claim 13 , wherein the deposition apparatus comprises:
a first deposition chamber forming a first organic compound layer,
a second deposition chamber forming a second organic compound layer, and
a third deposition chamber forming a third organic compound layer.
15. A deposition apparatus according to claim 14 , wherein:
said first organic compound layer emits a red light,
said second organic compound layer emits a green light, and
said third organic compound layer emits a blue light.
16. A deposition apparatus according to claim 13 , wherein each said evaporation source has an organic compound selected from the group consisting of a hole injectability, hole transportability, luminescent ability, blocking ability, electron transportability, or electron injectability.
17. A deposition apparatus comprising:
a load chamber;
a transport chamber;
an alignment chamber having a function of performing an alignment of a position between a metal mask and a substrate;
a deposition chamber; and
a plurality of evaporation sources in said deposition chamber;
wherein said transfer chamber is connected with said load chamber, said alignment chamber, and said deposition chamber, respectively;
wherein each of the plurality of evaporation sources comprises at least one organic compound having a different function; and
wherein the organic compounds having the different functions are continuously deposited by a vacuum evaporation from said plurality of evaporation sources.
18. A deposition apparatus according to claim 17 , wherein the deposition apparatus comprises:
a first deposition chamber forming a first organic compound layer,
a second deposition chamber forming a second organic compound layer, and
a third deposition chamber forming a third organic compound layer.
19. A deposition apparatus according to claim 18 , wherein:
said first organic compound layer emits a red light,
said second organic compound layer emits a green light, and
said third organic compound layer emits a blue light.
20. A deposition apparatus according to claim 17 , wherein each said evaporation source has an organic compound selected from the group consisting of a hole injectability, hole transportability, luminescent ability, blocking ability, electron transportability, or electron injectability.
21. A deposition apparatus comprising:
a load chamber;
a transport chamber;
an alignment chamber having a function of performing an alignment of a position between a metal mask and a substrate;
a deposition chamber; and
a plurality of evaporation sources in said deposition chamber;
wherein said transfer chamber is connected with said load chamber, said alignment chamber, and said deposition chamber, respectively;
wherein each of the plurality of evaporation sources comprises at least one organic compound having a different function, and
wherein at least two of the organic compounds having the different functions are continuously deposited by a vacuum evaporation from said plurality of evaporation sources.
22. A deposition apparatus according to claim 21 , wherein the deposition apparatus comprises:
a first deposition chamber forming a first organic compound layer,
a second deposition chamber forming a second organic compound layer, and
a third deposition chamber forming a third organic compound layer.
23. A deposition apparatus according to claim 22 , wherein:
said first organic compound layer emits a red light,
said second organic compound layer emits a green light, and
said third organic compound layer emits a blue light.
24. A deposition apparatus according to claim 21 , wherein each said evaporation source has an organic compound selected from the group consisting of a hole injectability, hole transportability, luminescent ability, blocking ability, electron transportability, or electron injectability.
25. A method comprising:
forming a first function region comprising a first organic compound from a first evaporation source by performing vacuum evaporation in a deposition chamber;
forming a first mixed region comprising said first organic compound and a second organic compound in said deposition chamber by performing vacuum evaporation simultaneously from said first evaporation source and from a second evaporation source;
forming a second function region comprising said second organic compound in said deposition chamber by performing vacuum evaporation from said second evaporation source but not from said first evaporation source;
forming a second mixed region comprising said second organic compound and a third organic compound in said deposition chamber by performing vacuum evaporation simultaneously from said second evaporation source and from a third evaporation source but not from said first evaporation source; and
forming a third function region comprising said third organic compound in said deposition chamber by performing vacuum evaporation from said third evaporation source but not from said first evaporation source and not from said second evaporation source.
26. A deposition method according to claim 25 , wherein:
said first function region is formed on an anode, said first organic compound is an organic compound with hole transportability,
said second organic compound is an organic compound which emits light, and
said third organic compound is an organic compound with an electron transportability.
27. A deposition method according to claim 25 , wherein said organic compound with a hole transportability comprises aromatic diamine compound.
28. A deposition method according to claim 25 , wherein:
said organic compound with an electron transportability comprises a metal selected from the group consisting of complex containing quinoline skeleton, metal complex containing benzoquinoline skeleton, oxadiazole derivative, triazole derivative or phenanthroline derivative.
29. A deposition method according to claim 25 , wherein:
said organic compound which emits light is selected from the group consisting of a metal complex containing quinoline skeleton, metal complex containing benzooxazole skeleton, and metal complex containing benzothiazole skeleton.
30. A method comprising:
forming a first function region comprising a first organic compound from a first evaporation source by performing vacuum evaporation in a deposition chamber;
forming a first mixed region comprising said first organic compound and a second organic compound in said deposition chamber by performing vacuum evaporation simultaneously from said first evaporation source and from a second evaporation source;
forming a second function region comprising said second organic compound in said deposition chamber by performing vacuum evaporation from said second evaporation source but not from said first evaporation source;
forming a second mixed region comprising said second organic compound and a third organic compound in said deposition chamber by performing vacuum evaporation simultaneously from said second evaporation source and a third evaporation source but not from said first evaporation source; and
after forming said second mixed region, forming a second function region comprising said second organic compound in said deposition chamber by performing vacuum evaporation from said second evaporation source but not from said first evaporation source and not from said third evaporation source.
31. A deposition method according to claim 30 , wherein:
said first function region is formed on an anode,
said first organic compound is an organic compound with hole transportability,
said second organic compound is an organic compound with an electron transportability, and
said third organic compound is an organic compound which emits light.
32. A deposition method according to claim 30 , wherein said organic compound with a hole transportability comprises aromatic diamine compound.
33. A deposition method according to claim 30 , wherein:
said organic compound with an electron transportability comprises a metal selected from the group consisting of complex containing quinoline skeleton, metal complex containing benzoquinoline skeleton, oxadiazole derivative, triazole derivative or phenanthroline derivative.
34. A deposition method according to claim 30 , wherein:
said organic compound which emits light is selected from the group consisting of a metal complex containing quinoline skeleton, metal complex containing benzooxazole skeleton, and metal complex containing benzothiazole skeleton.
35. A method comprising:
forming a first function region comprising a first organic compound from a first evaporation source by performing vacuum evaporation in a first deposition chamber;
forming a first mixed region comprising said first organic compound and a second organic compound in said first deposition chamber by performing vacuum evaporation simultaneously from said first evaporation source and from a second evaporation source; and
forming a second function region comprising said second organic compound in said first deposition chamber by performing vacuum evaporation from said second evaporation source but not from said first evaporation source;
forming a third function region comprising a third organic compound by performing vacuum evaporation from a third evaporation source in a second deposition chamber;
forming a second mixed region comprising said third organic compound and a fourth organic compound in said second deposition chamber by performing vacuum evaporation simultaneously from said third evaporation source and from a fourth evaporation source; and
forming a fourth function region comprising said fourth organic compound in said second deposition chamber by performing vacuum evaporation from said fourth evaporation source but not from said third evaporation source;
forming a fifth function region comprising a fifth organic compound from a fifth evaporation source by performing vacuum evaporation in a third deposition chamber;
forming a third mixed region comprising said fifth organic compound and a sixth organic compound in said third deposition chamber by performing vacuum evaporation simultaneously from said fifth evaporation source and from said sixth evaporation source; and
forming a sixth function region comprising said sixth organic compound in said third deposition chamber by performing vacuum evaporation from said sixth evaporation source but not from said fifth evaporation source.
36. A deposition method according to claim 35 , wherein:
one of said first function region and said second function region, one of said third function region and said fourth function region, and one of said fifth function region and said sixth function region comprises organic compound materials which emits light, and
the other one of said first function region and said second function region, the other one of said third function region and said fourth function region, and the other one of said fifth function region and said sixth function region comprises organic compounds selected from the group consisting of a hole injectability, a hole transportability, a blocking ability, an electron transportability, and an electron injectability.
37. A deposition method according to claim 36 , wherein said organic compound materials which emits light have a light emission color different from the other of said organic compound materials, respectively.
38. A deposition method according to claim 35 . wherein said organic compound with a hole transportability comprises aromatic diamine compound.
39. A deposition method according to claim 35 , wherein:
said organic compound with an electron transportability comprises a metal selected from the group consisting of complex containing quinoline skeleton, metal complex containing benzoquinoline skeleton, oxadiazole derivative, triazole derivative or phenanthroline derivative.
40. A deposition method according to claim 35 , wherein:
said organic compound which emits light is selected from the group consisting of a metal complex containing quinoline skeleton, metal complex containing benzooxazole skeleton, and metal complex containing benzothiazole skeleton.
41. A method of manufacturing an organic compound element comprising steps of:
during a first period, forming a first organic layer over a substrate by performing vacuum evaporation from a first evaporation source in a deposition chamber;
during a second period after said first period, forming a mixed region over the first organic layer by performing vacuum evaporation from the first evaporation source and from a second evaporation source in the deposition chamber;
during a third period after said second period, forming a second organic layer over the mixed region by performing vacuum evaporation from the second evaporation source but not from the first evaporation source in the deposition chamber.
42. A method of manufacturing an organic compound element in a deposition apparatus,
a load chamber, an alignment chamber, and a deposition chamber connected in series in the deposition apparatus,
wherein a position between a metal mask and a substrate is controlled in the alignment chamber;
the method comprising steps of:
during a first period, forming a first organic layer over said substrate by performing vacuum evaporation from a first evaporation source in the deposition chamber;
during a second period after said first period, forming a mixed region over the first organic layer by performing vacuum evaporation from the first evaporation source and from a second evaporation source in the deposition chamber;
during a third period after said second period, forming a second organic layer over the mixed region by performing vacuum evaporation from the second evaporation source but not from the first evaporation source in the deposition chamber.
43. A method of manufacturing an organic compound element in a deposition apparatus,
each of a load chamber, a transfer chamber, and an alignment chamber connected with a deposition chamber in the deposition apparatus, respectively;
wherein a position between a metal mask and a substrate is controlled in the alignment chamber;
the method comprising steps of:
during a first period, forming a first organic layer over the substrate by performing vacuum evaporation from a first evaporation source in the deposition chamber;
during a second period after said first period, forming a mixed region over the first organic layer by performing vacuum evaporation from the first evaporation source and from a second evaporation source in the deposition chamber; during a third period after said second period, forming a second organic layer over the mixed region by performing vacuum evaporation from the second evaporation source
but not from the first evaporation source in the deposition chamber.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/265,212 US8354786B2 (en) | 2001-02-01 | 2008-11-05 | Light-emitting device |
US13/735,080 US9349977B2 (en) | 2001-02-01 | 2013-01-07 | Light-emitting device having mixed layer including hole transporting compound |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001026184 | 2001-02-01 | ||
JP2001-26184 | 2001-02-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/265,212 Continuation US8354786B2 (en) | 2001-02-01 | 2008-11-05 | Light-emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20020139303A1 true US20020139303A1 (en) | 2002-10-03 |
Family
ID=18891043
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/062,005 Abandoned US20020139303A1 (en) | 2001-02-01 | 2002-01-31 | Deposition apparatus and deposition method |
US12/265,212 Expired - Fee Related US8354786B2 (en) | 2001-02-01 | 2008-11-05 | Light-emitting device |
US13/735,080 Expired - Fee Related US9349977B2 (en) | 2001-02-01 | 2013-01-07 | Light-emitting device having mixed layer including hole transporting compound |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/265,212 Expired - Fee Related US8354786B2 (en) | 2001-02-01 | 2008-11-05 | Light-emitting device |
US13/735,080 Expired - Fee Related US9349977B2 (en) | 2001-02-01 | 2013-01-07 | Light-emitting device having mixed layer including hole transporting compound |
Country Status (4)
Country | Link |
---|---|
US (3) | US20020139303A1 (en) |
KR (2) | KR20020064215A (en) |
CN (2) | CN101397649B (en) |
TW (1) | TW552650B (en) |
Cited By (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010051207A1 (en) * | 2000-05-12 | 2001-12-13 | Hirokazu Yamagata | Method of manufacturing a light emitting device |
US20020093283A1 (en) * | 2001-01-17 | 2002-07-18 | Satoshi Seo | Luminescent device and method of manufacturing same |
US20020105005A1 (en) * | 2001-02-08 | 2002-08-08 | Satoshi Seo | Light emitting device |
US20020113546A1 (en) * | 2001-02-22 | 2002-08-22 | Satoshi Seo | Organic light emitting device and display device using the same |
US20020187265A1 (en) * | 2001-06-12 | 2002-12-12 | Takao Mori | Apparatus and method for manufacturing an organic electroluminescence display |
US20030180457A1 (en) * | 2002-02-05 | 2003-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing system, manufacturing method, method of operating a manufacturing apparatus, and light emitting device |
US20030184505A1 (en) * | 2002-03-26 | 2003-10-02 | Semiconductor Energy Laboratory | Display device |
US20030219530A1 (en) * | 2002-02-22 | 2003-11-27 | Shunpei Yamazaki | Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus |
US20030221620A1 (en) * | 2002-06-03 | 2003-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Vapor deposition device |
US20030232563A1 (en) * | 2002-05-09 | 2003-12-18 | Isao Kamiyama | Method and apparatus for manufacturing organic electroluminescence device, and system and method for manufacturing display unit using organic electroluminescence devices |
US20040056915A1 (en) * | 2002-08-02 | 2004-03-25 | Seiko Epson Corporation | Material arranging method, film-forming apparatus, electronic device and manufacturing method thereof, electro-optical device and manufacturing method thereof, and electronic apparatus |
US20040154542A1 (en) * | 2001-02-08 | 2004-08-12 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Film formation apparatus and film formation method |
US20050016462A1 (en) * | 2002-12-12 | 2005-01-27 | Shunpei Yamazaki | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
US20050031783A1 (en) * | 2002-09-26 | 2005-02-10 | Advantech Global, Ltd | System for and method of manufacturing a large-area backplane by use of a small-area shadow mask |
US20050123797A1 (en) * | 2003-12-05 | 2005-06-09 | Kondakova Marina E. | Organic electroluminescent devices with additive |
US20050145866A1 (en) * | 2004-01-06 | 2005-07-07 | Yu-San Lee | Method and apparatus for forming thin film of organic electroluminescent device |
US20050185794A1 (en) * | 2002-05-10 | 2005-08-25 | Harris Corporation | Secure wireless local or metropolitan area network and related methods |
US20050260440A1 (en) * | 2000-12-28 | 2005-11-24 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Luminescent device |
US20060170337A1 (en) * | 2005-02-03 | 2006-08-03 | Lee Tae-Woo | Organic light emitting device and method of manufacturing the same |
US7102161B2 (en) | 2001-10-09 | 2006-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Switching element, display device using the switching element, and light emitting device |
US20070228362A1 (en) * | 2001-02-01 | 2007-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Organic Light Emitting Element and Display Device Using the Element |
US20070290195A1 (en) * | 2005-08-22 | 2007-12-20 | Stephen Forrest | Increased open-circuit-voltage organic photosensitive devices |
US20080006822A1 (en) * | 2006-06-01 | 2008-01-10 | Semiconductor Energy Laboratory Co. , Ltd. | Light-emitting element, light-emitting device and an electronic device |
US20080111481A1 (en) * | 2000-12-28 | 2008-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device and Method of Manufacturing the Same |
US20080142794A1 (en) * | 2006-12-04 | 2008-06-19 | Satoko Shitagaki | Light-emitting element, light-emitting device, and electronic device |
US20080231177A1 (en) * | 2007-03-23 | 2008-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Device and Electronic Device |
US7432116B2 (en) | 2001-02-21 | 2008-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for film deposition |
US20080254202A1 (en) * | 2004-03-05 | 2008-10-16 | Solibro Ab | Method and Apparatus for In-Line Process Control of the Cigs Process |
US20080268561A1 (en) * | 2007-04-27 | 2008-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Method of Light-Emitting Device |
US20090058285A1 (en) * | 2001-02-01 | 2009-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Deposition Apparatus and Deposition Method |
US20090079326A1 (en) * | 2007-09-20 | 2009-03-26 | Satoshi Seo | Light-Emitting Element, Light-Emitting Device, and Electronic Device |
US20090199968A1 (en) * | 2005-09-27 | 2009-08-13 | Advantech Global, Ltd | Method and Apparatus for Electronic Device Manufacture Using Shadow Masks |
US20090236980A1 (en) * | 2008-03-18 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device and Electronic Device |
US20090236590A1 (en) * | 2008-03-18 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device and Electronic Device |
US20090286985A1 (en) * | 2008-05-16 | 2009-11-19 | Semiconductor Energy Labaratory Co., Ltd. | Benzoxazole Derivative, and Light-Emitting Element, Light-Emitting Device, and Electronic Device Using the Same |
US7629611B2 (en) | 2001-11-09 | 2009-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, electronic device |
US7648925B2 (en) | 2003-04-11 | 2010-01-19 | Vitex Systems, Inc. | Multilayer barrier stacks and methods of making multilayer barrier stacks |
US7727601B2 (en) | 1999-10-25 | 2010-06-01 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US20100148165A1 (en) * | 2008-12-17 | 2010-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, and Electronic Device |
US20100148166A1 (en) * | 2008-12-17 | 2010-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Lighting Device, Light-Emitting Device, and Electronic Apparatus |
FR2940321A1 (en) * | 2008-12-19 | 2010-06-25 | Carewave Shielding Technologie | VACUUM DEPOSITION MACHINE ON SUBSTRATE OF THIN LAYER MATERIALS BY CATHODIC SPRAYING. |
US20100181562A1 (en) * | 2009-01-21 | 2010-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, and Electronic Device |
US7767498B2 (en) | 2005-08-25 | 2010-08-03 | Vitex Systems, Inc. | Encapsulated devices and method of making |
US20100236691A1 (en) * | 2009-03-18 | 2010-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Apparatus and Manufacturing Method of Lighting Device |
US20100301383A1 (en) * | 2009-05-29 | 2010-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, and Method for Manufacturing the Same |
US20100301382A1 (en) * | 2009-05-29 | 2010-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Appliance |
US8040047B2 (en) | 2007-10-19 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US8049208B2 (en) | 2005-04-22 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device having composite electrode |
WO2011139472A2 (en) * | 2010-04-26 | 2011-11-10 | Aventa Systems, Llc | Inline chemical vapor deposition system |
US20120021548A1 (en) * | 2003-04-25 | 2012-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus For Forming A Film And An Electroluminescence Device |
US20120094025A1 (en) * | 2010-10-18 | 2012-04-19 | Samsung Mobile Display Co., Ltd. | Substrate Depositing System and Method |
US8486543B2 (en) | 2009-12-01 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
US8590338B2 (en) | 2009-12-31 | 2013-11-26 | Samsung Mobile Display Co., Ltd. | Evaporator with internal restriction |
US20140065293A1 (en) * | 2012-09-04 | 2014-03-06 | Samsung Display Co., Ltd. | Mask assembly for testing a deposition process, deposition apparatus including the mask assembly, and testing method for a deposition process using the mask assembly |
US8723762B2 (en) * | 2007-03-26 | 2014-05-13 | Sony Corporation | Display apparatus and method for making the same |
US8808457B2 (en) * | 2002-04-15 | 2014-08-19 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US8815352B2 (en) | 2010-03-18 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Film forming method and method for manufacturing film-formation substrate |
US8865259B2 (en) | 2010-04-26 | 2014-10-21 | Singulus Mocvd Gmbh I.Gr. | Method and system for inline chemical vapor deposition |
US8900675B2 (en) | 2010-03-18 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing deposition substrate |
US8900366B2 (en) | 2002-04-15 | 2014-12-02 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US8951816B2 (en) | 2010-03-18 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Film forming method |
US8955217B2 (en) | 1999-10-25 | 2015-02-17 | Samsung Display Co., Ltd. | Method for edge sealing barrier films |
US9016234B2 (en) | 2011-02-14 | 2015-04-28 | Samsung Display Co., Ltd. | Mask holding device capable of changing magnetic means and deposition equipment using the same |
US9093402B2 (en) | 2005-02-18 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9184410B2 (en) | 2008-12-22 | 2015-11-10 | Samsung Display Co., Ltd. | Encapsulated white OLEDs having enhanced optical output |
US9273079B2 (en) | 2011-06-29 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Organometallic complex, light-emitting element, light-emitting device, electronic device, and lighting device |
US9337446B2 (en) | 2008-12-22 | 2016-05-10 | Samsung Display Co., Ltd. | Encapsulated RGB OLEDs having enhanced optical output |
US9397308B2 (en) | 2006-12-04 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
US20170090222A1 (en) * | 2015-09-25 | 2017-03-30 | Boe Technology Group Co., Ltd. | Device and method for removing impurities in optical alignment film |
US20170192366A1 (en) * | 2016-01-04 | 2017-07-06 | Boe Technology Group Co., Ltd. | Device and method for cleaning mask plate and vapor deposition apparatus |
US9741946B2 (en) | 2012-12-20 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element containing organic iridium exhibits blue-green to blue light emission |
US10950821B2 (en) | 2007-01-26 | 2021-03-16 | Samsung Display Co., Ltd. | Method of encapsulating an environmentally sensitive device |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4463492B2 (en) * | 2003-04-10 | 2010-05-19 | 株式会社半導体エネルギー研究所 | Manufacturing equipment |
KR20050001194A (en) * | 2003-06-27 | 2005-01-06 | 삼성오엘이디 주식회사 | Organic electro luminescence display and method for manufacturing the same |
KR101130545B1 (en) * | 2005-11-26 | 2012-03-23 | 엘지디스플레이 주식회사 | Method for deposition material of organicelectro luminescence in organicelectro luminescence display device |
DE102006003847B4 (en) * | 2006-01-26 | 2011-08-18 | Siemens AG, 80333 | Method and apparatus for producing a polycrystalline ceramic film on a substrate |
KR100795817B1 (en) * | 2007-02-20 | 2008-01-21 | 삼성에스디아이 주식회사 | An organic light emitting device, a method for preparing the same and a method for preparing organic layer |
WO2010026859A1 (en) * | 2008-09-05 | 2010-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
JP5060517B2 (en) * | 2009-06-24 | 2012-10-31 | 東京エレクトロン株式会社 | Imprint system |
US20110104398A1 (en) * | 2009-10-29 | 2011-05-05 | General Electric Company | Method and system for depositing multiple materials on a substrate |
JP5852810B2 (en) * | 2010-08-26 | 2016-02-03 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP2013055039A (en) * | 2011-08-11 | 2013-03-21 | Canon Inc | Manufacturing method of el light-emitting device and vapor deposition device |
KR20130045432A (en) * | 2011-10-26 | 2013-05-06 | 주식회사 탑 엔지니어링 | Rotary deposition apparatus |
CN104241802A (en) * | 2013-06-24 | 2014-12-24 | 深圳光启创新技术有限公司 | Manufacturing method of harmonic oscillator, harmonic oscillator, filter and electromagnetic device |
EP3079175A4 (en) * | 2013-12-02 | 2018-04-11 | Toshiba Hokuto Electronics Corporation | Light-emission device |
CN106498347A (en) * | 2016-12-12 | 2017-03-15 | 福州大学 | A kind of graphical multiple sources array evaporation coating device of high evenness |
CN108456843B (en) * | 2018-01-19 | 2021-01-19 | 广东工业大学 | High-performance TiAlSiN nano composite coating and preparation method and application thereof |
CN109449301B (en) * | 2018-09-19 | 2021-11-09 | 云谷(固安)科技有限公司 | Evaporation method of OLED display device, OLED display device and evaporation equipment |
Citations (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2002A (en) * | 1841-03-12 | Tor and planter for plowing | ||
US2003A (en) * | 1841-03-12 | Improvement in horizontal windivhlls | ||
US3654525A (en) * | 1965-10-23 | 1972-04-04 | Donald Leonard Maricle | Electrochemiluminescent device including one of naphthacene, perylene and 5, 6, 11, 12-tetraphenyl-naphthacene in aprotic solvent |
US4511599A (en) * | 1983-03-01 | 1985-04-16 | Sigmatron Associates | Mask for vacuum depositing back metal electrodes on EL panel |
US5017863A (en) * | 1989-10-20 | 1991-05-21 | Digital Equipment Corporation | Electro-emissive laser stimulated test |
US5039657A (en) * | 1988-08-19 | 1991-08-13 | Regents Of The University Of Minnesota | Preparation of superconducting oxide films by reactive evaporation using ozone |
US5170990A (en) * | 1989-12-01 | 1992-12-15 | Canon Kabushiki Kaisha | Vacuum valve and a vacuum treating apparatus in which said vacuum valve is used |
US5256945A (en) * | 1991-04-08 | 1993-10-26 | Pioneer Electronic Corporation | Organic electroluminescence element |
US5271089A (en) * | 1990-11-02 | 1993-12-14 | Nec Corporation | Speech parameter encoding method capable of transmitting a spectrum parameter at a reduced number of bits |
US5281489A (en) * | 1990-03-16 | 1994-01-25 | Asashi Kasei Kogyo Kabushiki Kaisha | Electroluminescent element |
US5486406A (en) * | 1994-11-07 | 1996-01-23 | Motorola | Green-emitting organometallic complexes for use in light emitting devices |
US5513499A (en) * | 1994-04-08 | 1996-05-07 | Ebara Technologies Incorporated | Method and apparatus for cryopump regeneration using turbomolecular pump |
US5585137A (en) * | 1994-03-03 | 1996-12-17 | Sumitomo Electric Industries, Ltd. | Apparatus and method of manufacturing fiber |
US5701055A (en) * | 1994-03-13 | 1997-12-23 | Pioneer Electronic Corporation | Organic electoluminescent display panel and method for manufacturing the same |
US5719467A (en) * | 1995-07-27 | 1998-02-17 | Hewlett-Packard Company | Organic electroluminescent device |
US5725664A (en) * | 1993-10-29 | 1998-03-10 | Tokyo Electron Limited | Semiconductor wafer processing apparatus including localized humidification between coating and heat treatment sections |
US5817431A (en) * | 1996-12-23 | 1998-10-06 | Motorola, Inc. | Electron injecting materials for organic electroluminescent devices and devices using same |
US5817366A (en) * | 1996-07-29 | 1998-10-06 | Tdk Corporation | Method for manufacturing organic electroluminescent element and apparatus therefor |
US5853905A (en) * | 1997-09-08 | 1998-12-29 | Motorola, Inc. | Efficient single layer electroluminescent device |
US5858563A (en) * | 1995-02-24 | 1999-01-12 | Sanyo Electric Co., Ltd. | Organic electroluminescent device |
US5925472A (en) * | 1997-03-31 | 1999-07-20 | Xerox Corporation | Electroluminescent devices |
US5925980A (en) * | 1997-05-01 | 1999-07-20 | Motorola, Inc. | Organic electroluminescent device with graded region |
US5955836A (en) * | 1996-09-21 | 1999-09-21 | U.S. Philips Corporation | Organic electroluminescent component with exciplex formed from a mixed layer of a mixture of hole transporting and electron transporting organic material |
US5989737A (en) * | 1997-02-27 | 1999-11-23 | Xerox Corporation | Organic electroluminescent devices |
US6001413A (en) * | 1997-03-10 | 1999-12-14 | Idemitsu Kosan Co., Ltd. | Method for producing organic electroluminescent device |
US6030715A (en) * | 1997-10-09 | 2000-02-29 | The University Of Southern California | Azlactone-related dopants in the emissive layer of an OLED |
US6066357A (en) * | 1998-12-21 | 2000-05-23 | Eastman Kodak Company | Methods of making a full-color organic light-emitting display |
US6097147A (en) * | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
US6121727A (en) * | 1997-04-04 | 2000-09-19 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
US6130001A (en) * | 1997-07-15 | 2000-10-10 | Motorola, Inc. | Organic electroluminescent device with continuous organic medium |
US6132647A (en) * | 1996-06-28 | 2000-10-17 | Denso Corporation | Blue light emitting material, electroluminescent device using same and method of manufacturing the electroluminescent device |
US6132280A (en) * | 1998-10-28 | 2000-10-17 | Tdk Corporation | System and process for fabricating an organic electroluminescent display device |
US6150043A (en) * | 1998-04-10 | 2000-11-21 | The Trustees Of Princeton University | OLEDs containing thermally stable glassy organic hole transporting materials |
US6215462B1 (en) * | 1997-09-05 | 2001-04-10 | Casio Computer Co Ltd | Display device and display driving method |
US6214631B1 (en) * | 1998-10-30 | 2001-04-10 | The Trustees Of Princeton University | Method for patterning light emitting devices incorporating a movable mask |
US6228228B1 (en) * | 1999-02-23 | 2001-05-08 | Sarnoff Corporation | Method of making a light-emitting fiber |
US6237529B1 (en) * | 2000-03-03 | 2001-05-29 | Eastman Kodak Company | Source for thermal physical vapor deposition of organic electroluminescent layers |
US20010003601A1 (en) * | 1997-05-01 | 2001-06-14 | Hideaki Ueda | Organic electroluminecent element and method of manufacturing same |
US6275649B1 (en) * | 1998-06-01 | 2001-08-14 | Nihon Shinku Gijutsu Kabushiki Kaisha | Evaporation apparatus |
US6284050B1 (en) * | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
US6285039B1 (en) * | 1996-08-19 | 2001-09-04 | Tdk Corporation | Organic electroluminescent device |
US6310360B1 (en) * | 1999-07-21 | 2001-10-30 | The Trustees Of Princeton University | Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices |
US6326091B1 (en) * | 1996-04-25 | 2001-12-04 | U. S. Philips Corporation | Organic electroluminescent device |
US20020018912A1 (en) * | 2000-07-03 | 2002-02-14 | Jung Sang H | Organic compound having an acetylene group, vacuum deposition polymerization thereof, deposited polymerized thin film, and electroluminescence device containing same |
US6366017B1 (en) * | 1999-07-14 | 2002-04-02 | Agilent Technologies, Inc/ | Organic light emitting diodes with distributed bragg reflector |
US6368730B1 (en) * | 1997-10-13 | 2002-04-09 | Matsushita Electric Industrial Co., Ltd. | Electroluminescent device |
US6372154B1 (en) * | 1999-12-30 | 2002-04-16 | Canon Kabushiki Kaisha | Luminescent ink for printing of organic luminescent devices |
US6392339B1 (en) * | 1999-07-20 | 2002-05-21 | Xerox Corporation | Organic light emitting devices including mixed region |
US6392250B1 (en) * | 2000-06-30 | 2002-05-21 | Xerox Corporation | Organic light emitting devices having improved performance |
US6396209B1 (en) * | 1998-12-16 | 2002-05-28 | International Manufacturing And Engineering Services Co., Ltd. | Organic electroluminescent device |
US20020074935A1 (en) * | 2000-12-15 | 2002-06-20 | Kwong Raymond C. | Highly stable and efficient OLEDs with a phosphorescent-doped mixed layer architecture |
US20020081767A1 (en) * | 2000-11-07 | 2002-06-27 | Toshitaka Kawashima | Vapor deposition method and vapor deposition apparatus for forming organic thin films |
US6413656B1 (en) * | 1998-09-14 | 2002-07-02 | The University Of Southern California | Reduced symmetry porphyrin molecules for producing enhanced luminosity from phosphorescent organic light emitting devices |
US6432255B1 (en) * | 2000-01-31 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for enhancing chamber cleaning |
US6458475B1 (en) * | 1999-11-24 | 2002-10-01 | The Trustee Of Princeton University | Organic light emitting diode having a blue phosphorescent molecule as an emitter |
US6468676B1 (en) * | 1999-01-02 | 2002-10-22 | Minolta Co., Ltd. | Organic electroluminescent display element, finder screen display device, finder and optical device |
US6495198B2 (en) * | 2000-11-07 | 2002-12-17 | Helix Technology Inc. | Method for fabricating an organic light emitting diode |
US6517996B1 (en) * | 2000-08-07 | 2003-02-11 | Industrial Technology Research Institute | Method of manufacturing full-color organic electro-luminescent device |
US6528824B2 (en) * | 2000-06-29 | 2003-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6541909B1 (en) * | 1999-03-02 | 2003-04-01 | Nec Corporation | Organic electroluminescent device with doped transport layer(s) and production method |
US6558817B1 (en) * | 1998-09-09 | 2003-05-06 | Minolta Co., Ltd. | Organic electroluminescent element |
US6566807B1 (en) * | 1998-12-28 | 2003-05-20 | Sharp Kabushiki Kaisha | Organic electroluminescent element and production method thereof |
US6592933B2 (en) * | 1997-10-15 | 2003-07-15 | Toray Industries, Inc. | Process for manufacturing organic electroluminescent device |
US20030134145A1 (en) * | 1998-12-16 | 2003-07-17 | Satoru Toguchi | Organic electroluminescence device |
US6614175B2 (en) * | 2001-01-26 | 2003-09-02 | Xerox Corporation | Organic light emitting devices |
US6774574B1 (en) * | 1999-06-23 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electronic device |
US6831406B1 (en) * | 1999-05-25 | 2004-12-14 | Matsushita Electric Industrial Co., Ltd. | Electroluminescent device having a very thin emission layer |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57170534A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Dry etching method for aluminum and aluminum alloy |
US4810619A (en) * | 1987-08-12 | 1989-03-07 | General Electric Co. | Photolithography over reflective substrates comprising a titanium nitride layer |
US5118986A (en) * | 1989-06-30 | 1992-06-02 | Ricoh Company, Ltd. | Electroluminescent device |
KR910004067A (en) * | 1989-07-31 | 1991-02-28 | 이헌조 | Thin film EL display device and manufacturing method thereof |
JP2773297B2 (en) | 1989-09-28 | 1998-07-09 | 日本電気株式会社 | Organic thin film EL device |
US5039658A (en) * | 1989-12-27 | 1991-08-13 | E. I. Du Pont De Nemours And Company | High current carrying superconductive fiber |
JPH04357694A (en) * | 1991-06-03 | 1992-12-10 | Denki Kagaku Kogyo Kk | Thin organic film el element |
JPH06140396A (en) * | 1992-10-23 | 1994-05-20 | Yamaha Corp | Semiconductor device and manufacture thereof |
JPH07278800A (en) | 1994-04-06 | 1995-10-24 | Vacuum Metallurgical Co Ltd | Device for forming coated film and method therefor |
JPH08111285A (en) | 1994-10-07 | 1996-04-30 | Tdk Corp | Manufacture of organic electroluminescent element and its device |
US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
US5640067A (en) | 1995-03-24 | 1997-06-17 | Tdk Corporation | Thin film transistor, organic electroluminescence display device and manufacturing method of the same |
US6853083B1 (en) | 1995-03-24 | 2005-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transfer, organic electroluminescence display device and manufacturing method of the same |
WO1997008759A1 (en) * | 1995-08-31 | 1997-03-06 | Kabushiki Kaisha Toshiba | Blue light emitting device and production method thereof |
US5849403A (en) | 1995-09-13 | 1998-12-15 | Kabushiki Kaisha Toshiba | Organic thin film device |
JP3831968B2 (en) * | 1996-02-23 | 2006-10-11 | ソニー株式会社 | Method for manufacturing optical element |
US6150042A (en) | 1996-12-09 | 2000-11-21 | Toyo Ink Manufacturing Co., Ltd. | Material for organoelectro-luminescence device and use thereof |
US6117529A (en) * | 1996-12-18 | 2000-09-12 | Gunther Leising | Organic electroluminescence devices and displays |
JPH10233288A (en) | 1996-12-20 | 1998-09-02 | Tdk Corp | Organic el element |
US5895932A (en) | 1997-01-24 | 1999-04-20 | International Business Machines Corporation | Hybrid organic-inorganic semiconductor light emitting diodes |
JP3641342B2 (en) | 1997-03-07 | 2005-04-20 | Tdk株式会社 | Semiconductor device and organic EL display device |
WO1999010862A1 (en) * | 1997-08-21 | 1999-03-04 | Seiko Epson Corporation | Active matrix display |
US6303238B1 (en) | 1997-12-01 | 2001-10-16 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
JPH11135258A (en) * | 1997-10-27 | 1999-05-21 | Casio Comput Co Ltd | Manufacture of electroluminescent element |
KR100320455B1 (en) * | 1997-11-17 | 2002-02-19 | 구자홍 | Organic Electroluminescent Device |
JP3203227B2 (en) * | 1998-02-27 | 2001-08-27 | 三洋電機株式会社 | Display device manufacturing method |
JP2998737B2 (en) | 1998-03-13 | 2000-01-11 | 日本電気株式会社 | Power supply control device for peripheral equipment |
CN1213127C (en) | 1998-09-09 | 2005-08-03 | 出光兴产株式会社 | Organic electroluminescence device and phenylenediamine derivative |
US6274887B1 (en) * | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
JP2000223715A (en) * | 1998-11-25 | 2000-08-11 | Semiconductor Energy Lab Co Ltd | Manufacture of thin film transistor and manufacture of active matrix substrate |
TW439387B (en) * | 1998-12-01 | 2001-06-07 | Sanyo Electric Co | Display device |
JP3159259B2 (en) | 1999-01-13 | 2001-04-23 | 日本電気株式会社 | Organic electroluminescence device |
US6020078A (en) * | 1998-12-18 | 2000-02-01 | Eastman Kodak Company | Green organic electroluminescent devices |
JP3782255B2 (en) | 1999-04-28 | 2006-06-07 | 株式会社アルバック | Vapor deposition source and vapor deposition apparatus for organic compounds |
KR100317284B1 (en) * | 1999-04-30 | 2001-12-22 | 구자홍 | Organic Electroluminescent Device |
EP1729327B2 (en) * | 1999-05-13 | 2022-08-10 | The Trustees Of Princeton University | Use of a phosphorescent iridium compound as emissive molecule in an organic light emitting device |
JP2000328229A (en) | 1999-05-19 | 2000-11-28 | Canon Inc | Vacuum deposition device |
JP2001052870A (en) | 1999-06-03 | 2001-02-23 | Tdk Corp | Organic electroluminescent element |
KR100683050B1 (en) | 1999-06-28 | 2007-02-15 | 모토로라 인코포레이티드 | Organic electroluminescent device |
JP3924648B2 (en) | 1999-11-02 | 2007-06-06 | ソニー株式会社 | Organic electroluminescence device |
AU3056301A (en) | 2000-02-02 | 2001-08-14 | Mitsubishi Chemical Corporation | Organic electroluminescent element and method of manufacture thereof |
JP3904793B2 (en) * | 2000-02-23 | 2007-04-11 | パイオニア株式会社 | Organic electroluminescence device |
KR20010104215A (en) | 2000-05-12 | 2001-11-24 | 야마자끼 순페이 | A method of manufacturing a light emitting device |
US6579630B2 (en) * | 2000-12-07 | 2003-06-17 | Canon Kabushiki Kaisha | Deuterated semiconducting organic compounds used for opto-electronic devices |
US6965124B2 (en) | 2000-12-12 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of fabricating the same |
TW545080B (en) | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
SG138466A1 (en) | 2000-12-28 | 2008-01-28 | Semiconductor Energy Lab | Luminescent device |
TW518909B (en) | 2001-01-17 | 2003-01-21 | Semiconductor Energy Lab | Luminescent device and method of manufacturing same |
TW519770B (en) | 2001-01-18 | 2003-02-01 | Semiconductor Energy Lab | Light emitting device and manufacturing method thereof |
US6765348B2 (en) | 2001-01-26 | 2004-07-20 | Xerox Corporation | Electroluminescent devices containing thermal protective layers |
CN101397649B (en) | 2001-02-01 | 2011-12-28 | 株式会社半导体能源研究所 | Deposition device for manufacturing organic compound on substrate |
SG118110A1 (en) | 2001-02-01 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting element and display device using the element |
US20030010288A1 (en) | 2001-02-08 | 2003-01-16 | Shunpei Yamazaki | Film formation apparatus and film formation method |
TW582121B (en) | 2001-02-08 | 2004-04-01 | Semiconductor Energy Lab | Light emitting device |
TW550672B (en) | 2001-02-21 | 2003-09-01 | Semiconductor Energy Lab | Method and apparatus for film deposition |
SG118118A1 (en) | 2001-02-22 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting device and display using the same |
US6734463B2 (en) | 2001-05-23 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a window |
US6956240B2 (en) * | 2001-10-30 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
-
2002
- 2002-01-31 CN CN2008102138627A patent/CN101397649B/en not_active Expired - Fee Related
- 2002-01-31 CN CNB021033250A patent/CN100430515C/en not_active Expired - Fee Related
- 2002-01-31 US US10/062,005 patent/US20020139303A1/en not_active Abandoned
- 2002-01-31 TW TW091101696A patent/TW552650B/en not_active IP Right Cessation
- 2002-02-01 KR KR1020020005797A patent/KR20020064215A/en active Search and Examination
-
2007
- 2007-01-19 KR KR1020070006068A patent/KR20070029768A/en active Search and Examination
-
2008
- 2008-11-05 US US12/265,212 patent/US8354786B2/en not_active Expired - Fee Related
-
2013
- 2013-01-07 US US13/735,080 patent/US9349977B2/en not_active Expired - Fee Related
Patent Citations (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2002A (en) * | 1841-03-12 | Tor and planter for plowing | ||
US2003A (en) * | 1841-03-12 | Improvement in horizontal windivhlls | ||
US3654525A (en) * | 1965-10-23 | 1972-04-04 | Donald Leonard Maricle | Electrochemiluminescent device including one of naphthacene, perylene and 5, 6, 11, 12-tetraphenyl-naphthacene in aprotic solvent |
US4511599A (en) * | 1983-03-01 | 1985-04-16 | Sigmatron Associates | Mask for vacuum depositing back metal electrodes on EL panel |
US5039657A (en) * | 1988-08-19 | 1991-08-13 | Regents Of The University Of Minnesota | Preparation of superconducting oxide films by reactive evaporation using ozone |
US5017863A (en) * | 1989-10-20 | 1991-05-21 | Digital Equipment Corporation | Electro-emissive laser stimulated test |
US5170990A (en) * | 1989-12-01 | 1992-12-15 | Canon Kabushiki Kaisha | Vacuum valve and a vacuum treating apparatus in which said vacuum valve is used |
US5281489A (en) * | 1990-03-16 | 1994-01-25 | Asashi Kasei Kogyo Kabushiki Kaisha | Electroluminescent element |
US5271089A (en) * | 1990-11-02 | 1993-12-14 | Nec Corporation | Speech parameter encoding method capable of transmitting a spectrum parameter at a reduced number of bits |
US5256945A (en) * | 1991-04-08 | 1993-10-26 | Pioneer Electronic Corporation | Organic electroluminescence element |
US5725664A (en) * | 1993-10-29 | 1998-03-10 | Tokyo Electron Limited | Semiconductor wafer processing apparatus including localized humidification between coating and heat treatment sections |
US5585137A (en) * | 1994-03-03 | 1996-12-17 | Sumitomo Electric Industries, Ltd. | Apparatus and method of manufacturing fiber |
US5701055A (en) * | 1994-03-13 | 1997-12-23 | Pioneer Electronic Corporation | Organic electoluminescent display panel and method for manufacturing the same |
US5513499A (en) * | 1994-04-08 | 1996-05-07 | Ebara Technologies Incorporated | Method and apparatus for cryopump regeneration using turbomolecular pump |
US5486406A (en) * | 1994-11-07 | 1996-01-23 | Motorola | Green-emitting organometallic complexes for use in light emitting devices |
US5858563A (en) * | 1995-02-24 | 1999-01-12 | Sanyo Electric Co., Ltd. | Organic electroluminescent device |
US5719467A (en) * | 1995-07-27 | 1998-02-17 | Hewlett-Packard Company | Organic electroluminescent device |
US6326091B1 (en) * | 1996-04-25 | 2001-12-04 | U. S. Philips Corporation | Organic electroluminescent device |
US6132647A (en) * | 1996-06-28 | 2000-10-17 | Denso Corporation | Blue light emitting material, electroluminescent device using same and method of manufacturing the electroluminescent device |
US5817366A (en) * | 1996-07-29 | 1998-10-06 | Tdk Corporation | Method for manufacturing organic electroluminescent element and apparatus therefor |
US20020038867A1 (en) * | 1996-08-19 | 2002-04-04 | Tdk Corporation | Organic EL device |
US6603140B2 (en) * | 1996-08-19 | 2003-08-05 | Tdk Corporation | Organic EL device |
US6285039B1 (en) * | 1996-08-19 | 2001-09-04 | Tdk Corporation | Organic electroluminescent device |
US5955836A (en) * | 1996-09-21 | 1999-09-21 | U.S. Philips Corporation | Organic electroluminescent component with exciplex formed from a mixed layer of a mixture of hole transporting and electron transporting organic material |
US5817431A (en) * | 1996-12-23 | 1998-10-06 | Motorola, Inc. | Electron injecting materials for organic electroluminescent devices and devices using same |
US5989737A (en) * | 1997-02-27 | 1999-11-23 | Xerox Corporation | Organic electroluminescent devices |
US6001413A (en) * | 1997-03-10 | 1999-12-14 | Idemitsu Kosan Co., Ltd. | Method for producing organic electroluminescent device |
US5925472A (en) * | 1997-03-31 | 1999-07-20 | Xerox Corporation | Electroluminescent devices |
US6121727A (en) * | 1997-04-04 | 2000-09-19 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
US20010003601A1 (en) * | 1997-05-01 | 2001-06-14 | Hideaki Ueda | Organic electroluminecent element and method of manufacturing same |
US5925980A (en) * | 1997-05-01 | 1999-07-20 | Motorola, Inc. | Organic electroluminescent device with graded region |
US6130001A (en) * | 1997-07-15 | 2000-10-10 | Motorola, Inc. | Organic electroluminescent device with continuous organic medium |
US6215462B1 (en) * | 1997-09-05 | 2001-04-10 | Casio Computer Co Ltd | Display device and display driving method |
US5853905A (en) * | 1997-09-08 | 1998-12-29 | Motorola, Inc. | Efficient single layer electroluminescent device |
US6030715A (en) * | 1997-10-09 | 2000-02-29 | The University Of Southern California | Azlactone-related dopants in the emissive layer of an OLED |
US6368730B1 (en) * | 1997-10-13 | 2002-04-09 | Matsushita Electric Industrial Co., Ltd. | Electroluminescent device |
US6592933B2 (en) * | 1997-10-15 | 2003-07-15 | Toray Industries, Inc. | Process for manufacturing organic electroluminescent device |
US6150043A (en) * | 1998-04-10 | 2000-11-21 | The Trustees Of Princeton University | OLEDs containing thermally stable glassy organic hole transporting materials |
US6284050B1 (en) * | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
US6275649B1 (en) * | 1998-06-01 | 2001-08-14 | Nihon Shinku Gijutsu Kabushiki Kaisha | Evaporation apparatus |
US6558817B1 (en) * | 1998-09-09 | 2003-05-06 | Minolta Co., Ltd. | Organic electroluminescent element |
US6097147A (en) * | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
US6413656B1 (en) * | 1998-09-14 | 2002-07-02 | The University Of Southern California | Reduced symmetry porphyrin molecules for producing enhanced luminosity from phosphorescent organic light emitting devices |
US6132280A (en) * | 1998-10-28 | 2000-10-17 | Tdk Corporation | System and process for fabricating an organic electroluminescent display device |
US6214631B1 (en) * | 1998-10-30 | 2001-04-10 | The Trustees Of Princeton University | Method for patterning light emitting devices incorporating a movable mask |
US6759144B2 (en) * | 1998-12-16 | 2004-07-06 | Samsung Sdi Co., Ltd. | Organic electroluminescence device |
US6396209B1 (en) * | 1998-12-16 | 2002-05-28 | International Manufacturing And Engineering Services Co., Ltd. | Organic electroluminescent device |
US20030134145A1 (en) * | 1998-12-16 | 2003-07-17 | Satoru Toguchi | Organic electroluminescence device |
US6066357A (en) * | 1998-12-21 | 2000-05-23 | Eastman Kodak Company | Methods of making a full-color organic light-emitting display |
US6566807B1 (en) * | 1998-12-28 | 2003-05-20 | Sharp Kabushiki Kaisha | Organic electroluminescent element and production method thereof |
US6468676B1 (en) * | 1999-01-02 | 2002-10-22 | Minolta Co., Ltd. | Organic electroluminescent display element, finder screen display device, finder and optical device |
US6228228B1 (en) * | 1999-02-23 | 2001-05-08 | Sarnoff Corporation | Method of making a light-emitting fiber |
US6541909B1 (en) * | 1999-03-02 | 2003-04-01 | Nec Corporation | Organic electroluminescent device with doped transport layer(s) and production method |
US6831406B1 (en) * | 1999-05-25 | 2004-12-14 | Matsushita Electric Industrial Co., Ltd. | Electroluminescent device having a very thin emission layer |
US6777887B2 (en) * | 1999-06-23 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electronic device |
US6774574B1 (en) * | 1999-06-23 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electronic device |
US20040207331A1 (en) * | 1999-06-23 | 2004-10-21 | Semiconductor Energy Laboratory Co., Ltd. | El display device and electronic device |
US6366017B1 (en) * | 1999-07-14 | 2002-04-02 | Agilent Technologies, Inc/ | Organic light emitting diodes with distributed bragg reflector |
US6392339B1 (en) * | 1999-07-20 | 2002-05-21 | Xerox Corporation | Organic light emitting devices including mixed region |
US6310360B1 (en) * | 1999-07-21 | 2001-10-30 | The Trustees Of Princeton University | Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices |
US6458475B1 (en) * | 1999-11-24 | 2002-10-01 | The Trustee Of Princeton University | Organic light emitting diode having a blue phosphorescent molecule as an emitter |
US6372154B1 (en) * | 1999-12-30 | 2002-04-16 | Canon Kabushiki Kaisha | Luminescent ink for printing of organic luminescent devices |
US6432255B1 (en) * | 2000-01-31 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for enhancing chamber cleaning |
US6237529B1 (en) * | 2000-03-03 | 2001-05-29 | Eastman Kodak Company | Source for thermal physical vapor deposition of organic electroluminescent layers |
US6528824B2 (en) * | 2000-06-29 | 2003-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6392250B1 (en) * | 2000-06-30 | 2002-05-21 | Xerox Corporation | Organic light emitting devices having improved performance |
US6682782B2 (en) * | 2000-07-03 | 2004-01-27 | Korea Research Institute Of Chemical Technology | Organic compound having an acetylene group, vacuum deposition polymerization thereof, deposited polymerized thin film, and electroluminescence device containing same |
US20020018912A1 (en) * | 2000-07-03 | 2002-02-14 | Jung Sang H | Organic compound having an acetylene group, vacuum deposition polymerization thereof, deposited polymerized thin film, and electroluminescence device containing same |
US20030118950A1 (en) * | 2000-08-07 | 2003-06-26 | Ching-Ian Chao | Method of manufacturing full-color organic electro-luminescent device |
US6517996B1 (en) * | 2000-08-07 | 2003-02-11 | Industrial Technology Research Institute | Method of manufacturing full-color organic electro-luminescent device |
US20020081767A1 (en) * | 2000-11-07 | 2002-06-27 | Toshitaka Kawashima | Vapor deposition method and vapor deposition apparatus for forming organic thin films |
US6559065B2 (en) * | 2000-11-07 | 2003-05-06 | Sony Corporation | Vapor deposition method and vapor deposition apparatus for forming organic thin films |
US6495198B2 (en) * | 2000-11-07 | 2002-12-17 | Helix Technology Inc. | Method for fabricating an organic light emitting diode |
US20020074935A1 (en) * | 2000-12-15 | 2002-06-20 | Kwong Raymond C. | Highly stable and efficient OLEDs with a phosphorescent-doped mixed layer architecture |
US6803720B2 (en) * | 2000-12-15 | 2004-10-12 | Universal Display Corporation | Highly stable and efficient OLEDs with a phosphorescent-doped mixed layer architecture |
US6614175B2 (en) * | 2001-01-26 | 2003-09-02 | Xerox Corporation | Organic light emitting devices |
Cited By (158)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8955217B2 (en) | 1999-10-25 | 2015-02-17 | Samsung Display Co., Ltd. | Method for edge sealing barrier films |
US7727601B2 (en) | 1999-10-25 | 2010-06-01 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US20010051207A1 (en) * | 2000-05-12 | 2001-12-13 | Hirokazu Yamagata | Method of manufacturing a light emitting device |
US7579089B2 (en) | 2000-12-28 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device |
US8310147B2 (en) | 2000-12-28 | 2012-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device |
US8878431B2 (en) | 2000-12-28 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US9209418B2 (en) | 2000-12-28 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US7915807B2 (en) | 2000-12-28 | 2011-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US20080111481A1 (en) * | 2000-12-28 | 2008-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device and Method of Manufacturing the Same |
US9362518B2 (en) | 2000-12-28 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US8432094B2 (en) | 2000-12-28 | 2013-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US20110169400A1 (en) * | 2000-12-28 | 2011-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device and Method of Manufacturing the Same |
US20050260440A1 (en) * | 2000-12-28 | 2005-11-24 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Luminescent device |
US7550173B2 (en) | 2001-01-17 | 2009-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device and method of manufacturing same |
US20020093283A1 (en) * | 2001-01-17 | 2002-07-18 | Satoshi Seo | Luminescent device and method of manufacturing same |
US20050170737A1 (en) * | 2001-01-17 | 2005-08-04 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Luminescent device and method of manufacturing same |
US20070228362A1 (en) * | 2001-02-01 | 2007-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Organic Light Emitting Element and Display Device Using the Element |
US20090058285A1 (en) * | 2001-02-01 | 2009-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Deposition Apparatus and Deposition Method |
US8354786B2 (en) | 2001-02-01 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US7459722B2 (en) | 2001-02-01 | 2008-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and display device using the element |
US7858977B2 (en) | 2001-02-01 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and display device using the element |
US20110101322A1 (en) * | 2001-02-01 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic Light Emitting Element and Display Device Using the Element |
US9219241B2 (en) | 2001-02-01 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and display device using the element |
US9349977B2 (en) | 2001-02-01 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having mixed layer including hole transporting compound |
US20090096369A1 (en) * | 2001-02-01 | 2009-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and display device using the element |
US9608224B2 (en) | 2001-02-01 | 2017-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and display device using the element |
US8674348B2 (en) | 2001-02-01 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and display device using the element |
US8174007B2 (en) | 2001-02-01 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and display device using the element |
US7196360B2 (en) | 2001-02-08 | 2007-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20040154542A1 (en) * | 2001-02-08 | 2004-08-12 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Film formation apparatus and film formation method |
US8513648B2 (en) | 2001-02-08 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7456425B2 (en) | 2001-02-08 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060243970A1 (en) * | 2001-02-08 | 2006-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device |
US20020105005A1 (en) * | 2001-02-08 | 2002-08-08 | Satoshi Seo | Light emitting device |
US7629025B2 (en) | 2001-02-08 | 2009-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and film formation method |
US7432116B2 (en) | 2001-02-21 | 2008-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for film deposition |
US20020113546A1 (en) * | 2001-02-22 | 2002-08-22 | Satoshi Seo | Organic light emitting device and display device using the same |
US7399991B2 (en) * | 2001-02-22 | 2008-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting device and display device using the same |
US20080197769A1 (en) * | 2001-02-22 | 2008-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting device and display device using the same |
US7663149B2 (en) | 2001-02-22 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting device and display device using the same |
US7651722B2 (en) | 2001-06-12 | 2010-01-26 | Sony Corporation | Apparatus and method for manufacturing an organic electroluminescence display |
US8034178B2 (en) * | 2001-06-12 | 2011-10-11 | Sony Corporation | Apparatus and method for manufacturing an organic electroluminescence display |
US20040168634A1 (en) * | 2001-06-12 | 2004-09-02 | Takao Mori | Apparatus and method for manufacturing an organic electroluminescence display |
US20020187265A1 (en) * | 2001-06-12 | 2002-12-12 | Takao Mori | Apparatus and method for manufacturing an organic electroluminescence display |
US7102161B2 (en) | 2001-10-09 | 2006-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Switching element, display device using the switching element, and light emitting device |
US20100073352A1 (en) * | 2001-11-09 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, electric circuit, display device and light-emitting device |
US9117913B2 (en) | 2001-11-09 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, electric circuit, display device and light-emitting device |
US7629611B2 (en) | 2001-11-09 | 2009-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, electronic device |
US20030180457A1 (en) * | 2002-02-05 | 2003-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing system, manufacturing method, method of operating a manufacturing apparatus, and light emitting device |
US7195801B2 (en) * | 2002-02-05 | 2007-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing process for storing and transferring evaporation material |
US8536784B2 (en) | 2002-02-22 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus |
US7378126B2 (en) | 2002-02-22 | 2008-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus |
US20090001896A1 (en) * | 2002-02-22 | 2009-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Device and Method of Manufacturing the Same, and Method of Operating Manufacturing Apparatus |
US20030219530A1 (en) * | 2002-02-22 | 2003-11-27 | Shunpei Yamazaki | Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus |
US8138670B2 (en) * | 2002-02-22 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus |
US20030184505A1 (en) * | 2002-03-26 | 2003-10-02 | Semiconductor Energy Laboratory | Display device |
US7091938B2 (en) | 2002-03-26 | 2006-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9839940B2 (en) | 2002-04-15 | 2017-12-12 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US8808457B2 (en) * | 2002-04-15 | 2014-08-19 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US8900366B2 (en) | 2002-04-15 | 2014-12-02 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US20030232563A1 (en) * | 2002-05-09 | 2003-12-18 | Isao Kamiyama | Method and apparatus for manufacturing organic electroluminescence device, and system and method for manufacturing display unit using organic electroluminescence devices |
US20050185794A1 (en) * | 2002-05-10 | 2005-08-25 | Harris Corporation | Secure wireless local or metropolitan area network and related methods |
US20030221620A1 (en) * | 2002-06-03 | 2003-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Vapor deposition device |
US20040056915A1 (en) * | 2002-08-02 | 2004-03-25 | Seiko Epson Corporation | Material arranging method, film-forming apparatus, electronic device and manufacturing method thereof, electro-optical device and manufacturing method thereof, and electronic apparatus |
US7132016B2 (en) * | 2002-09-26 | 2006-11-07 | Advantech Global, Ltd | System for and method of manufacturing a large-area backplane by use of a small-area shadow mask |
US20050031783A1 (en) * | 2002-09-26 | 2005-02-10 | Advantech Global, Ltd | System for and method of manufacturing a large-area backplane by use of a small-area shadow mask |
US8709540B2 (en) | 2002-12-12 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
US7583020B2 (en) | 2002-12-12 | 2009-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
US20050016462A1 (en) * | 2002-12-12 | 2005-01-27 | Shunpei Yamazaki | Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus |
US20090293808A1 (en) * | 2002-12-12 | 2009-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Device, Film-Forming Method and Manufacturing Apparatus Thereof, and Cleaning Method of the Manufacturing Apparatus |
US7648925B2 (en) | 2003-04-11 | 2010-01-19 | Vitex Systems, Inc. | Multilayer barrier stacks and methods of making multilayer barrier stacks |
US8399362B2 (en) * | 2003-04-25 | 2013-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for forming a film and an electroluminescence device |
US20120021548A1 (en) * | 2003-04-25 | 2012-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus For Forming A Film And An Electroluminescence Device |
US8778809B2 (en) * | 2003-04-25 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for forming a film and an electroluminescence device |
US7374828B2 (en) * | 2003-12-05 | 2008-05-20 | Eastman Kodak Company | Organic electroluminescent devices with additive |
US20050123797A1 (en) * | 2003-12-05 | 2005-06-09 | Kondakova Marina E. | Organic electroluminescent devices with additive |
US20050145866A1 (en) * | 2004-01-06 | 2005-07-07 | Yu-San Lee | Method and apparatus for forming thin film of organic electroluminescent device |
US20080254202A1 (en) * | 2004-03-05 | 2008-10-16 | Solibro Ab | Method and Apparatus for In-Line Process Control of the Cigs Process |
US9142705B2 (en) * | 2004-03-05 | 2015-09-22 | Solibro Research Ab | Method and apparatus for in-line process control of the cigs process |
US8310148B2 (en) | 2005-02-03 | 2012-11-13 | Samsung Display Co., Ltd. | Organic light emitting device and method of manufacturing the same |
US7906169B2 (en) * | 2005-02-03 | 2011-03-15 | Samsung Mobile Display Co., Ltd. | Organic light emitting device and method of manufacturing the same |
US20110193069A1 (en) * | 2005-02-03 | 2011-08-11 | Samsung Mobile Display Co., Ltd. | Organic light emitting device and method of manufacturing the same |
US20060170337A1 (en) * | 2005-02-03 | 2006-08-03 | Lee Tae-Woo | Organic light emitting device and method of manufacturing the same |
US9093402B2 (en) | 2005-02-18 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8049208B2 (en) | 2005-04-22 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device having composite electrode |
KR101500473B1 (en) * | 2005-08-22 | 2015-03-16 | 더 트러스티즈 오브 프린스턴 유니버시티 | Increased open-circuit-voltage organic photosensitive devices |
US20070290195A1 (en) * | 2005-08-22 | 2007-12-20 | Stephen Forrest | Increased open-circuit-voltage organic photosensitive devices |
US7767498B2 (en) | 2005-08-25 | 2010-08-03 | Vitex Systems, Inc. | Encapsulated devices and method of making |
US8852345B2 (en) * | 2005-09-27 | 2014-10-07 | Advantech Global, Ltd | Method and apparatus for electronic device manufacture using shadow masks |
US20090199968A1 (en) * | 2005-09-27 | 2009-08-13 | Advantech Global, Ltd | Method and Apparatus for Electronic Device Manufacture Using Shadow Masks |
US20080006822A1 (en) * | 2006-06-01 | 2008-01-10 | Semiconductor Energy Laboratory Co. , Ltd. | Light-emitting element, light-emitting device and an electronic device |
US8860019B2 (en) | 2006-06-01 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device comprising light-emitting layer including two layers |
US7649211B2 (en) | 2006-06-01 | 2010-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element |
US8076676B2 (en) | 2006-06-01 | 2011-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device and an electronic device which include two layers including the same light-emitting organic compound |
US8410492B2 (en) | 2006-06-01 | 2013-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device and an electronic device, which include two layers including same light-emitting organic compound |
US20100171112A1 (en) * | 2006-06-01 | 2010-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device and an Electronic Device |
US20100213457A1 (en) * | 2006-12-04 | 2010-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, and Electronic Device |
US8319210B2 (en) | 2006-12-04 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US7732811B2 (en) | 2006-12-04 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US20080142794A1 (en) * | 2006-12-04 | 2008-06-19 | Satoko Shitagaki | Light-emitting element, light-emitting device, and electronic device |
US8916857B2 (en) | 2006-12-04 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US9397308B2 (en) | 2006-12-04 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
US10950821B2 (en) | 2007-01-26 | 2021-03-16 | Samsung Display Co., Ltd. | Method of encapsulating an environmentally sensitive device |
US20080231177A1 (en) * | 2007-03-23 | 2008-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Device and Electronic Device |
US8053980B2 (en) | 2007-03-23 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device |
US8723762B2 (en) * | 2007-03-26 | 2014-05-13 | Sony Corporation | Display apparatus and method for making the same |
US8431432B2 (en) | 2007-04-27 | 2013-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device |
US20080268561A1 (en) * | 2007-04-27 | 2008-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Method of Light-Emitting Device |
US8901812B2 (en) | 2007-09-20 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US8384283B2 (en) | 2007-09-20 | 2013-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US20090079326A1 (en) * | 2007-09-20 | 2009-03-26 | Satoshi Seo | Light-Emitting Element, Light-Emitting Device, and Electronic Device |
US8251765B2 (en) | 2007-10-19 | 2012-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US8040047B2 (en) | 2007-10-19 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US8278649B2 (en) | 2008-03-18 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device and electronic device |
US9224960B2 (en) | 2008-03-18 | 2015-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US9192017B2 (en) | 2008-03-18 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device and electronic device |
US20090236980A1 (en) * | 2008-03-18 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device and Electronic Device |
US20090236590A1 (en) * | 2008-03-18 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device and Electronic Device |
US8859108B2 (en) | 2008-05-16 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Benzoxazole derivative, and light-emitting element, light-emitting device, and electronic device using the same |
US20090286985A1 (en) * | 2008-05-16 | 2009-11-19 | Semiconductor Energy Labaratory Co., Ltd. | Benzoxazole Derivative, and Light-Emitting Element, Light-Emitting Device, and Electronic Device Using the Same |
US8362466B2 (en) | 2008-12-17 | 2013-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US9437824B2 (en) | 2008-12-17 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light emitting device, and electronic device |
US20100148166A1 (en) * | 2008-12-17 | 2010-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Lighting Device, Light-Emitting Device, and Electronic Apparatus |
US8581237B2 (en) | 2008-12-17 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
US20100148165A1 (en) * | 2008-12-17 | 2010-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, and Electronic Device |
FR2940321A1 (en) * | 2008-12-19 | 2010-06-25 | Carewave Shielding Technologie | VACUUM DEPOSITION MACHINE ON SUBSTRATE OF THIN LAYER MATERIALS BY CATHODIC SPRAYING. |
US9337446B2 (en) | 2008-12-22 | 2016-05-10 | Samsung Display Co., Ltd. | Encapsulated RGB OLEDs having enhanced optical output |
US9184410B2 (en) | 2008-12-22 | 2015-11-10 | Samsung Display Co., Ltd. | Encapsulated white OLEDs having enhanced optical output |
US9362530B2 (en) | 2008-12-22 | 2016-06-07 | Samsung Display Co., Ltd. | Encapsulated white OLEDs having enhanced optical output |
US20100181562A1 (en) * | 2009-01-21 | 2010-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, and Electronic Device |
US9147854B2 (en) | 2009-01-21 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US8324615B2 (en) | 2009-01-21 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US9214632B2 (en) | 2009-03-18 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus and manufacturing method of lighting device |
US20100236691A1 (en) * | 2009-03-18 | 2010-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Apparatus and Manufacturing Method of Lighting Device |
US9741955B2 (en) | 2009-05-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and method for manufacturing the same |
US20100301383A1 (en) * | 2009-05-29 | 2010-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, and Method for Manufacturing the Same |
US8841653B2 (en) | 2009-05-29 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, lighting device, and electronic appliance |
US20100301382A1 (en) * | 2009-05-29 | 2010-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Appliance |
US8486543B2 (en) | 2009-12-01 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
US9698354B2 (en) | 2009-12-01 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
US10756287B2 (en) | 2009-12-01 | 2020-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
US8904819B2 (en) | 2009-12-31 | 2014-12-09 | Samsung Display Co., Ltd. | Evaporator with internal restriction |
US8590338B2 (en) | 2009-12-31 | 2013-11-26 | Samsung Mobile Display Co., Ltd. | Evaporator with internal restriction |
US8900675B2 (en) | 2010-03-18 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing deposition substrate |
US8815352B2 (en) | 2010-03-18 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Film forming method and method for manufacturing film-formation substrate |
US8951816B2 (en) | 2010-03-18 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Film forming method |
WO2011139472A2 (en) * | 2010-04-26 | 2011-11-10 | Aventa Systems, Llc | Inline chemical vapor deposition system |
WO2011139472A3 (en) * | 2010-04-26 | 2012-01-19 | Aventa Systems, Llc | Inline chemical vapor deposition system |
US8865259B2 (en) | 2010-04-26 | 2014-10-21 | Singulus Mocvd Gmbh I.Gr. | Method and system for inline chemical vapor deposition |
US20120094025A1 (en) * | 2010-10-18 | 2012-04-19 | Samsung Mobile Display Co., Ltd. | Substrate Depositing System and Method |
US9016234B2 (en) | 2011-02-14 | 2015-04-28 | Samsung Display Co., Ltd. | Mask holding device capable of changing magnetic means and deposition equipment using the same |
US9273079B2 (en) | 2011-06-29 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Organometallic complex, light-emitting element, light-emitting device, electronic device, and lighting device |
US10151022B2 (en) | 2012-09-04 | 2018-12-11 | Samsung Display Co., Ltd. | Mask assembly for testing a deposition process, deposition apparatus including the mask assembly, and testing method for a deposition process using the mask assembly |
US9795983B2 (en) * | 2012-09-04 | 2017-10-24 | Samsung Display Co., Ltd. | Mask assembly for testing a deposition process, deposition apparatus including the mask assembly, and testing method for a deposition process using the mask assembly |
US20140065293A1 (en) * | 2012-09-04 | 2014-03-06 | Samsung Display Co., Ltd. | Mask assembly for testing a deposition process, deposition apparatus including the mask assembly, and testing method for a deposition process using the mask assembly |
US9741946B2 (en) | 2012-12-20 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element containing organic iridium exhibits blue-green to blue light emission |
US20170090222A1 (en) * | 2015-09-25 | 2017-03-30 | Boe Technology Group Co., Ltd. | Device and method for removing impurities in optical alignment film |
US20170192366A1 (en) * | 2016-01-04 | 2017-07-06 | Boe Technology Group Co., Ltd. | Device and method for cleaning mask plate and vapor deposition apparatus |
Also Published As
Publication number | Publication date |
---|---|
US9349977B2 (en) | 2016-05-24 |
TW552650B (en) | 2003-09-11 |
US20090058285A1 (en) | 2009-03-05 |
CN100430515C (en) | 2008-11-05 |
CN1369573A (en) | 2002-09-18 |
KR20020064215A (en) | 2002-08-07 |
US20130119364A1 (en) | 2013-05-16 |
US8354786B2 (en) | 2013-01-15 |
CN101397649A (en) | 2009-04-01 |
CN101397649B (en) | 2011-12-28 |
KR20070029768A (en) | 2007-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9349977B2 (en) | Light-emitting device having mixed layer including hole transporting compound | |
US7432116B2 (en) | Method and apparatus for film deposition | |
US7629025B2 (en) | Film formation apparatus and film formation method | |
US8912712B2 (en) | Light emitting device, electronic equipment and apparatus for manufacturing the same | |
US7045955B2 (en) | Electroluminescence element and a light emitting device using the same | |
US6828727B2 (en) | Light emitting device comprising a partition layer having an overhang shape | |
US20100147220A1 (en) | Evaporation container and vapor deposition apparatus | |
JP4101522B2 (en) | Film forming apparatus and film forming method | |
JP4343480B2 (en) | Film forming apparatus and method for manufacturing light emitting apparatus | |
JP2002322556A (en) | Film deposition method and film deposition apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SEMICONDUCTOR ENERGY LABORATORY CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YAMAZAKI, SHUNPEI;SEO, SATOSHI;MIZUKAMI, MAYUMI;REEL/FRAME:012568/0104;SIGNING DATES FROM 20020108 TO 20020117 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |